Abstract: A layer of doped oxide glass is deposited on a semiconductor device in a chemical vapor deposition chamber by reacting gaseous sources of silicon, ozone and at least one boron or phosphorus dopant in a carrier gas, the ozone being present in a ratio of about 9-15 weight percent of the carrier gas. The deposited layer of doped oxide glass contains no greater than about 4 weight percent each of boron and phosphorus concentration and is annealed at a temperature no greater than about 700° C. for a time sufficient to soften and outgas any residual moisture in the oxide glass layer and level the upper surface to a desired degree.

Abstract: A process for fabricating a device including the step of forming a structure for facilitating the passivation of surface states is disclosed. The structure comprises an oxynitride layer formed as part of the device structure. The oxynitride facilitates the passivation of surface states when heated.

Abstract: In a PECVD process, the plasma potential is controlled and maintained at a uniform level to confine the formed plasma to the gap area between the electrodes away from the influence of the walls of the discharge chamber. The plasma potential is controlled by operating the system at a high pressure, above about 12 Torr, and monitoring the operation by observing the DC bias on the upper or driven electrode until a positive potential, preferably greater than about 10V, is developed. At this point a symmetrical glow discharge and a controlled plasma exists between the driven electrode and the susceptor electrode, controllable by maintaining the pressure between about 14 and 20 Torr, to reduce plasma damage to the semiconductor body being coated which maximizes yield.

Abstract: A spin on insulating coating with ionic barrier properties is formed on a substrate, by mixing a P or B containing material such as phosphazene or borazine with a solution of silsesquioxane, spin coating on a substrate to form a film of pre-determined thickness. The coated film is cured in a step wise manner to drive out the solvents and most of the H and OH groups, with the resulting film having a composition SiONX, where X can be B, P, F and mixtures thereof. The amount of P, B or other elements are predetermined by calculating the solids in the silsesquioxane and adding suitable amount of borazine or phosphazene. The coated and cured film fills and planarizes any topography on the substrate created by etching trenches, forming gate stacks or metal lines. In one of the variation, the substrate has a layer of insulating material disposed thereon prior to the application of the spin-on insulator.

Abstract: An inert gas, such as helium, nitrogen, or argon, is used for pressurization and stabilization in a chemical vapor deposition process that occurs in an ambient temperature in excess of 400.degree. C. Using the inert gas in the pressurization and stabilization stages of the chemical vapor deposition process eliminates the formation of tungsten oxides on tungsten studs, lines and other devices in the substrate, thereby eliminating the variable contact resistance and other problems associated with tungsten oxides.