Patents by Inventor Donna Woosley

Donna Woosley has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor die edge reconditioning
    Patent number: 7374971
    Abstract: An integrated circuit has a semiconductor substrate and an interconnect layer that mechanically relatively weak and susceptible to cracks and delamination. In the formation of the integrated circuit from a semiconductor wafer, a cut is made through the interconnect layer to form an edge of the interconnect layer. This cut may continue completely through the wafer thickness or stop short of doing so. In either case, after cutting through the interconnect layer, a reconditioning layer is formed on the edge of the interconnect layer. This reconditioning layer seals the existing cracks and delaminations and inhibits the further delamination or cracking of the interconnect layer. The sealing layer may be formed, for example, before the cut through the wafer, after the cut through the wafer but before any packaging, or after performing wirebonding between the interconnect layer and an integrated circuit package.
    Type: Grant
    Filed: April 20, 2005
    Date of Patent: May 20, 2008
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Yuan Yuan, Kevin J. Hess, Chu-Chung Lee, Tu-Anh Tran, Donna Woosley, legal representative, Alan H. Woosley
  • Semiconductor die edge reconditioning
    Publication number: 20060237850
    Abstract: An integrated circuit has a semiconductor substrate and an interconnect layer that mechanically relatively weak and susceptible to cracks and delamination. In the formation of the integrated circuit from a semiconductor wafer, a cut is made through the interconnect layer to form an edge of the interconnect layer. This cut may continue completely through the wafer thickness or stop short of doing so. In either case, after cutting through the interconnect layer, a reconditioning layer is formed on the edge of the interconnect layer. This reconditioning layer seals the existing cracks and delaminations and inhibits the further delamination or cracking of the interconnect layer. The sealing layer may be formed, for example, before the cut through the wafer, after the cut through the wafer but before any packaging, or after performing wirebonding between the interconnect layer and an integrated circuit package.
    Type: Application
    Filed: April 20, 2005
    Publication date: October 26, 2006
    Inventors: Yuan Yuan, Kevin Hess, Chu-Chung Lee, Tu-Anh Tran, Alan Woosley, Donna Woosley