Abstract: Substrate processing systems are provided herein. In some embodiments, a substrate processing system may include a target assembly having a target comprising a source material to be deposited on a substrate; a grounding assembly disposed about the target assembly and having a first surface that is generally parallel to and opposite a backside of the target assembly; a support member coupled to the grounding assembly to support the target assembly within the grounding assembly; one or more insulators disposed between the backside of the target assembly and the first surface of the grounding assembly; and one or more biasing elements disposed between the first surface of the grounding assembly and the backside of the target assembly to bias the target assembly toward the support member.

Abstract: A processing system may include a target having a central axis normal thereto; a source distribution plate having a target facing side opposing a backside of the target, wherein the source distribution plate includes a plurality of first features such that a first distance of a first radial RF distribution path along a given first diameter is about equal to a second distance of an opposing second radial RF distribution path along the given first diameter; and a ground plate opposing a target opposing side of the source distribution plate and having a plurality of second features disposed about the central axis and corresponding to the plurality of first features, wherein a third distance of a first radial RF return path along a given second diameter is about equal to a fourth distance of an opposing second radial RF return path along the given second diameter.

Abstract: Apparatus for processing substrates are provided herein. In some embodiments, an apparatus includes a process kit comprising a shield having one or more sidewalls configured to surround a first volume, the first volume disposed within an inner volume of a process chamber; and a first ring moveable between a first position, wherein the first ring rests on the shield, and a second position, wherein a gap is formed between an outer surface of the first ring and an inner surface of the one or more sidewalls, wherein a width of the gap is less than about two plasma sheath widths for a plasma formed at a frequency of about 40 MHz or higher and at a pressure of about 140 mTorr or lower.

Abstract: Apparatus for processing substrates is disclosed herein. In some embodiments, an apparatus includes a first shield having a first end, a second end, and one or more first sidewalls disposed between the first and second ends, wherein the first end is configured to interface with a first support member of a process chamber to support the first shield in a position such that the one or more first sidewalls surround a first volume of the process chamber; and a second shield having a first end, a second end, and one or more second sidewalls disposed between the first and second ends of the second shield and about the first shield, wherein the first end of the second shield is configured to interface with a second support member of the process chamber to support the second shield such that the second shield contacts the first shield to form a seal therebetween.

Abstract: Apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing a substrate includes a substrate support that may include a dielectric member having a surface to support a substrate thereon; one or more first conductive members disposed below the dielectric member and having a dielectric member facing surface adjacent to the dielectric member; and a second conductive member disposed about and contacting the one or more first conductive members such that RF energy provided to the substrate by an RF source returns to the RF source by traveling radially outward from the substrate support along the dielectric member facing surface of the one or more first conductive members and along a first surface of the second conductive member disposed substantially parallel to a peripheral edge surface of the one or more first conductive members after travelling along the dielectric layer facing surface.

Abstract: In some embodiments, substrate processing apparatus may include a chamber body; a lid disposed atop the chamber body; a target assembly coupled to the lid, the target assembly including a target of material to be deposited on a substrate; an annular dark space shield having an inner wall disposed about an outer edge of the target; a seal ring disposed adjacent to an outer edge of the dark space shield; and a support member coupled to the lid proximate an outer end of the support member and extending radially inward such that the support member supports the seal ring and the annular dark space shield, wherein the support member provides sufficient compression when coupled to the lid such that a seal is formed between the support member and the seal ring and the seal ring and the target assembly.

Abstract: Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a cover ring, a shield, and an isolator for use in a physical deposition chamber. The components of the process kit work alone and in combination to significantly reduce particle generation and stray plasmas. In comparison with existing multiple part shields, which provide an extended RF return path contributing to RF harmonics causing stray plasma outside the process cavity, the components of the process kit reduce the RF return path thus providing improved plasma containment in the interior processing region.

Abstract: In some embodiments, a feed structure to couple RF energy to a target may include a body having a first end to receive RF energy and a second end opposite the first end to couple the RF energy to a target, the body further having a central opening disposed through the body from the first end to the second end; a first member coupled to the body at the first end, wherein the first member comprises a first element circumscribing the body and extending radially outward from the body, and one or more terminals disposed in the first member to receive RF energy from an RF power source; and a source distribution plate coupled to the second end of the body to distribute the RF energy to the target, wherein the source distribution plate includes a hole disposed through the plate and aligned with the central opening of the body.

Abstract: Apparatus and methods for performing plasma processing on a wafer supported on a pedestal are provided. The apparatus can include a pedestal on which the wafer can be supported, a variable capacitor having a variable capacitance, a motor attached to the variable capacitor which varies the capacitance of the variable capacitor, a motor controller connected to the motor that causes the motor to rotate, and an output from the variable capacitor connected to the pedestal. A desired state of the variable capacitor is associated with a process recipe in a process controller. When the process recipe is executed the variable capacitor is placed in the desired state.

Abstract: Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate.

Abstract: A lift mechanism for and a corresponding use of a magnetron in a plasma sputter reactor. A magnetron rotating about the target axis is controllably lifted away from the back of the target to compensate for sputter erosion, thereby maintaining a constant magnetic field and resultant plasma density at the sputtered surface, which is particularly important for stable operation with a small magnetron, for example, one executing circular or planetary motion about the target axis. The lift mechanism can include a lead screw axially fixed to the magnetron support shaft and a lead nut engaged therewith to raise the magnetron as the lead nut is turned. Alternatively, the support shaft is axially fixed to a vertically moving slider. The amount of lift may be controlled according a recipe based on accumulated power applied to the target or by monitoring electrical characteristics of the target.

Abstract: Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a cover ring, a shield, and an isolator for use in a physical deposition chamber. The components of the process kit work alone and in combination to significantly reduce particle generation and stray plasmas. In comparison with existing multiple part shields, which provide an extended RF return path contributing to RF harmonics causing stray plasma outside the process cavity, the components of the process kit reduce the RF return path thus providing improved plasma containment in the interior processing region.

Abstract: A magnet encapsulated within a canister formed from two cans into a laminated structure particularly useful in plasma processing reactors. Each can includes an end wall and a cylindrical sidewall. One can additionally includes an annular lip that slidably fits outside the sidewall of the other can with a small gap therebetween. The magnet is inserted into the two cans together with a flowable and curable adhesive such as epoxy. The cans are slid together and compressed to cause the adhesive to flow between the magnet and the two cans and between the lip of one can and the sidewall of the other. The adhesive is cured to bond the magnet to the cans and to bond the cans together and to also hermetically seal the structure. The cans may be deep drawn from non-magnetic stainless steel with wall thicknesses of less than 0.064 mm.

Abstract: A sputtering chamber has a sputtering target comprising a backing plate and a sputtering plate. The backing plate has a groove. The sputtering plate comprises a cylindrical mesa having a plane, and an annular inclined rim surrounding the cylindrical mesa. In one version, the backing plate comprises a material having a high thermal conductivity and a low electrical resistivity. In another version, the backing plate comprises a backside surface with a single groove or a plurality of grooves.

Abstract: A process kit for a sputtering chamber comprises a deposition ring, cover ring, and a shield assembly, for placement about a substrate support in a sputtering chamber. The deposition ring comprising an annular band with an inner lip extending transversely, a raised ridge substantially parallel to the substrate support, an inner open channel, and a ledge radially outward of the raised ridge. A cover ring at least partially covers the deposition ring, the cover ring comprising an annular plate comprising a footing which rests on a surface about the substrate support, and downwardly extending first and second cylindrical walls.

Abstract: A sputtering target for a sputtering chamber comprises a backing plate and titanium sputtering plate mounted on the backing plate. The sputtering plate comprises a central cylindrical mesa having a plane, and a peripheral inclined annular rim surrounding the cylindrical mesa, the annular rim being inclined relative to the plane of the cylindrical mesa by an angle of at least about 8°.

Abstract: A lift mechanism for and a corresponding use of a magnetron in a plasma sputter reactor. A magnetron rotating about the target axis is controllably lifted away from the back of the target to compensate for sputter erosion, thereby maintaining a constant magnetic field and resultant plasma density at the sputtered surface, which is particularly important for stable operation with a small magnetron, for example, one executing circular or planetary motion about the target axis. The lift mechanism can include a lead screw axially fixed to the magnetron support shaft and a lead nut engaged therewith to raise the magnetron as the lead nut is turned. Alternatively, the support shaft is axially fixed to a vertically moving slider. The amount of lift may be controlled according a recipe based on accumulated power applied to the target or by monitoring electrical characteristics of the target.

Abstract: A magnet encapsulated within a canister formed from two cans into a laminated structure particularly useful in plasma processing reactors. Each can includes an end wall and a cylindrical sidewall. One can additionally includes an annular lip that slidably fits outside the sidewall of the other can with a small gap therebetween. The magnet is inserted into the two cans togther with a flowable and curable adhesive such as epoxy. The cans are slid together and compressed to cause the adhesive to flow between the magnet and the two cans and between the lip of one can and the sidewall of the other. The adhesive is cured to bond the magnet to the cans and to bond the cans together and to also hermetically seal the structure. The cans may be deep drawn from non-magnetic stainless steel with wall thicknesses of less than 0.064 mm.

Abstract: A high temperature cable includes wire bundle having a plurality of copper strands, where each copper strand has a barrier coating and an anti-oxidation coating disposed thereon. A mica-based layer is wrapped around a length of the wire bundle and a fiberglass layer is disposed over the mica-based layer.

Abstract: A high temperature cable includes wire bundle having a plurality of copper strands, where each copper strand has a barrier coating and an anti-oxidation coating disposed thereon. A mica-based layer is wrapped around a length of the wire bundle and a fiberglass layer is disposed over the mica-based layer.