Patents by Inventor Doo Cheol Park
Doo Cheol Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9118856Abstract: An image sensor includes a unit pixel including a plurality of color pixels with a depth pixel. A first signal line group of first signal lines is used to supply first control signals that control operation of the plurality of color pixels, and a separate second signal line group of second signal lines is used to supply second control signals that control operation of the depth pixel.Type: GrantFiled: July 5, 2012Date of Patent: August 25, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Won Joo Kim, Hyoung Soo Ko, Doo Cheol Park, Hee Woo Park, Kwang-Min Lee, Ju Hwan Jung
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Patent number: 9029785Abstract: A method of fabricating a microlens includes forming layer of photoresist on a substrate, patterning the layer of photoresist, and then reflowing the photoresist pattern. The layer of photoresist is formed by coating the substrate with liquid photoresist whose viscosity is 150 to 250 cp. A depth sensor includes a substrate and photoelectric conversion elements at an upper portion of the substrate, a metal wiring section disposed on the substrate, an array of the microlenses for focusing incident light as beams onto the photoelectric conversion elements and which beams avoid the wirings of the metal wiring section. The depths sensor also includes a layer presenting a flat upper surface on which the microlenses are formed. The layer may be a dedicated planarization layer or an IR filter, interposed between the microlenses and the metal wiring section.Type: GrantFiled: February 29, 2012Date of Patent: May 12, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Doo Cheol Park, Seung Hyuk Chang, Myung-Sun Kim, Won Joo Kim, Ju Hwan Jung, Seung Hoon Lee, Kwang-Min Lee, Hyoung Soo Ko
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Publication number: 20140015932Abstract: A 3D image sensor includes a first color filter configured to pass wavelengths of a first region of visible light and wavelengths of infrared light; a second color filter configured to pass wavelengths of a second region of visible light and the wavelengths of infrared light; and an infrared sensor configured to detect the wavelengths of infrared light passed through the first color filter.Type: ApplicationFiled: July 12, 2013Publication date: January 16, 2014Inventors: Won Joo KIM, Doo Cheol PARK, Yoon Dong PARK, Jung Bin YUN, Kwang Min LEE
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Publication number: 20130010072Abstract: An image sensor includes a unit pixel including a plurality of color pixels with a depth pixel. A first signal line group of first signal lines is used to supply first control signals that control operation of the plurality of color pixels, and a separate second signal line group of second signal lines is used to supply second control signals that control operation of the depth pixel.Type: ApplicationFiled: July 5, 2012Publication date: January 10, 2013Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Won Joo Kim, Hyoung Soo Ko, Doo Cheol Park, Hee Woo Park, Kwang-Min Lee, Ju Hwan Jung
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Publication number: 20120224028Abstract: A method of fabricating a microlens includes forming layer of photoresist on a substrate, patterning the layer of photoresist, and then reflowing the photoresist pattern. The layer of photoresist is formed by coating the substrate with liquid photoresist whose viscosity is 150 to 250 cp. A depth sensor includes a substrate and photoelectric conversion elements at an upper portion of the substrate, a metal wiring section disposed on the substrate, an array of the microlenses for focusing incident light as beams onto the photoelectric conversion elements and which beams avoid the wirings of the metal wiring section. The depths sensor also includes a layer presenting a flat upper surface on which the microlenses are formed. The layer may be a dedicated planarization layer or an IR filter, interposed between the microlenses and the metal wiring section.Type: ApplicationFiled: February 29, 2012Publication date: September 6, 2012Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: DOO CHEOL PARK, SEUNG HYUK CHANG, MYUNG-SUN KIM, WON JOO KIM, JU HWAN JUNG, SEUNG HOON LEE, KWANG-MIN LEE, HYOUNG SOO KO
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Patent number: 8193600Abstract: A shared-pixel-type image sensor including a shared floating diffusion region formed in a semiconductor substrate; first and second adjacent photoelectric conversion regions sharing the floating diffusion region; two transmission elements that alternately transfer electric charges accumulated in the first and second photoelectric conversion regions to the shared floating diffusion region, respectively; a drive element for outputting the electric charges of the shared floating diffusion region; a first contact formed on the floating diffusion region; a second contact formed on the drive element; and a local wire that connects the first and second contacts to electrically connect the floating diffusion region and the drive element, wherein the local wire is formed at a level lower than respective top surfaces of the first and second contacts.Type: GrantFiled: April 1, 2009Date of Patent: June 5, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Hyun-Pil Noh, Duck-Hyung Lee, Doo-Cheol Park
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Patent number: 7875491Abstract: A complementary metal-oxide-semiconductor image sensor may include: a semiconductor substrate; a photodiode formed on a first portion of the semiconductor substrate; a transfer gate formed on the semiconductor substrate, near the photodiode, to transfer optical charges accumulated in the photodiode; a floating diffusion area formed on a second portion of the semiconductor substrate, on an opposite side of the transfer gate from the photodiode, to accommodate the optical charges; and/or a channel area formed under the transfer gate and contacting a side of the photodiode to transfer the optical charges. The transfer gate may be formed, at least in part, of transparent material. A method of manufacturing a complimentary metal-oxide-semiconductor image sensor may include: forming the photodiode; forming the floating diffusion area, separate from the photodiode; and/or forming the transfer gate, near the photodiode, to transfer optical charges accumulated in the photodiode.Type: GrantFiled: January 24, 2008Date of Patent: January 25, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Doo-cheol Park, Jung-hyeon Kim, Jun-young Lee
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Patent number: 7820468Abstract: Disclosed herein is a stack type surface acoustic wave package. The surface acoustic wave package comprises a first bare chip having a plurality of electrodes formed thereon, a second bare chip having a plurality of electrodes and via-holes formed thereon, a connecting portion electrically connecting the first bare chip to an upper surface of the second bare chip such that the electrodes of the first bare chip face the electrodes of the second bare chip, and a sealing member provided on the first and second bare chips to form an air-tight space on an operating surface between the first and second bare chips. The surface acoustic wave package can prevent deformation due to thermal impact from the outside during a packaging process, enhancing reliability of the product, minimizing the size of the product, and reducing manufacturing costs by reducing the number of components and material costs.Type: GrantFiled: August 24, 2009Date of Patent: October 26, 2010Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Seung Hee Lee, Doo Cheol Park, Joo Hun Park, Young Jin Lee, Sang Wook Park, Nam Hyeong Kim
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Publication number: 20100047949Abstract: Disclosed herein is a stack type surface acoustic wave package. The surface acoustic wave package comprises a first bare chip having a plurality of electrodes formed thereon, a second bare chip having a plurality of electrodes and via-holes formed thereon, a connecting portion electrically connecting the first bare chip to an upper surface of the second bare chip such that the electrodes of the first bare chip face the electrodes of the second bare chip, and a sealing member provided on the first and second bare chips to form an air-tight space on an operating surface between the first and second bare chips. The surface acoustic wave package can prevent deformation due to thermal impact from the outside during a packaging process, enhancing reliability of the product, minimizing the size of the product, and reducing manufacturing costs by reducing the number of components and material costs.Type: ApplicationFiled: August 24, 2009Publication date: February 25, 2010Applicant: SAMSUNG ELECTRO-MECHANICS CO.,LTD.Inventors: Seung Hee Lee, Doo Cheol Park, Joo Hun Park, Young Jin Lee, Sang Wook Park, Nam Hyeong Kim
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Publication number: 20090261443Abstract: A shared-pixel-type image sensor including a shared floating diffusion region formed in a semiconductor substrate; first and second adjacent photoelectric conversion regions sharing the floating diffusion region; two transmission elements that alternately transfer electric charges accumulated in the first and second photoelectric conversion regions to the shared floating diffusion region, respectively; a drive element for outputting the electric charges of the shared floating diffusion region; a first contact formed on the floating diffusion region; a second contact formed on the drive element; and a local wire that connects the first and second contacts to electrically connect the floating diffusion region and the drive element, wherein the local wire is formed at a level lower than respective top surfaces of the first and second contacts.Type: ApplicationFiled: April 1, 2009Publication date: October 22, 2009Inventors: Hyun-Pil Noh, Duck-Hyung Lee, Doo-Cheol Park
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Publication number: 20090179239Abstract: A complementary metal-oxide-semiconductor image sensor may include: a semiconductor substrate; a photodiode formed on a first portion of the semiconductor substrate; a transfer gate formed on the semiconductor substrate, near the photodiode, to transfer optical charges accumulated in the photodiode; a floating diffusion area formed on a second portion of the semiconductor substrate, on an opposite side of the transfer gate from the photodiode, to accommodate the optical charges; and/or a channel area formed under the transfer gate and contacting a side of the photodiode to transfer the optical charges. The transfer gate may be formed, at least in part, of transparent material. A method of manufacturing a complimentary metal-oxide-semiconductor image sensor may include: forming the photodiode; forming the floating diffusion area, separate from the photodiode; and/or forming the transfer gate, near the photodiode, to transfer optical charges accumulated in the photodiode.Type: ApplicationFiled: January 24, 2008Publication date: July 16, 2009Inventors: Doo-cheol Park, Jung-hyeon Kim, Jun-young Lee
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Publication number: 20080224190Abstract: An image sensor with sufficient photoelectric conversion capacity and enhanced reliability and a method of fabricating the same, in which the image sensor includes a bare substrate; an epitaxial layer disposed on the bare substrate and including a first impurity distribution region of a first conductivity type, which is formed on the bare substrate, and a second impurity distribution region of a second conductivity type, which is formed on the first impurity distribution region; and a charge collection well formed within the epitaxial layer and at least partially doped with third impurities of the second conductivity type, wherein the charge collection well occupies the first impurity distribution region and the second impurity distribution region and represents the second conductivity type as a whole.Type: ApplicationFiled: March 12, 2008Publication date: September 18, 2008Inventors: Jong-Min Lee, Jong-Cheol Shin, Doo-Cheol Park, Jeong-Hoon Koo, Hee-Yong Lim
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Patent number: 7336017Abstract: A surface acoustic wave package comprises a first bare chip having a plurality of electrodes formed thereon, a second bare chip having a plurality of electrodes and via-holes formed thereon, a connecting portion electrically connecting the first bare chip to an upper surface of the second bare chip such that the electrodes of the first bare chip face the electrodes of the second bare chip, and a sealing member provided on the first and second bare chips to form an air-tight space on an operating surface between the first and second bare chips.Type: GrantFiled: September 2, 2005Date of Patent: February 26, 2008Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Seung Hee Lee, Doo Cheol Park, Joo Hun Park, Young Jin Lee, Sang Wook Park, Nam Hyeong Kim
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Publication number: 20070145541Abstract: Disclosed herein is a stack type surface acoustic wave package. The surface acoustic wave package comprises a first bare chip having a plurality of electrodes formed thereon, a second bare chip having a plurality of electrodes and via-holes formed thereon, a connecting portion electrically connecting the first bare chip to an upper surface of the second bare chip such that the electrodes of the first bare chip face the electrodes of the second bare chip, and a sealing member provided on the first and second bare chips to form an air-tight space on an operating surface between the first and second bare chips. The surface acoustic wave package can prevent deformation due to thermal impact from the outside during a packaging process, enhancing reliability of the product, minimizing the size of the product, and reducing manufacturing costs by reducing the number of components and material costs.Type: ApplicationFiled: March 6, 2007Publication date: June 28, 2007Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Seung Hee LEE, Doo Cheol PARK, Joo Hun PARK, Young Jin LEE, Sang Wook PARK, Nam Hyeong KIM