Abstract: In an ion implanting apparatus and an ion implanting method using the same, the ion implanting apparatus includes a disk chamber containing a rotatable disk, a wafer mounted on the rotatable disk, and a charge sensor for monitoring a charged state of the wafer, the charge sensor being fixed to the disk chamber to be adjacent to and facing a surface of the wafer. An output of the charge sensor may be used as feedback to control the charged state of the wafer.

Abstract: In an ion implanting apparatus and an ion implanting method using the same, the ion implanting apparatus includes a disk chamber containing a rotatable disk, a wafer mounted on the rotatable disk, and a charge sensor for monitoring a charged state of the wafer, the charge sensor being fixed to the disk chamber to be adjacent to and facing a surface of the wafer. An output of the charge sensor may be used as feedback to control the charged state of the wafer.

Abstract: A method of testing ion implantation equipment verifies the level of ion implantation energy. The method includes implanting first conductive ions in an implantation region in a semiconductor substrate, implanting second conductive ions, having valence different from that of the first conductive ions, in the implantation region so as to produce a second well, and subsequently measuring a sheet resistance of the semiconductor substrate. The implanting of the second conductive ions may be carried out while varying the level of the ion implantation energy. By forming a twin well in this way, and then measuring the sheet resistance, the value of the sheet resistance can be precisely correlated to the amount of energy used to form a well.

Abstract: A method for monitoring an ion implanter includes positioning a substrate behind an interceptor for intercepting a portion of an ion beam to be irradiated toward the substrate, irradiating a first ion beam toward the substrate to form a first shadow on the substrate, rotating the substrate about a central axis of the substrate, irradiating a second ion beam toward the substrate to form a second shadow on the substrate, and measuring a dosage of ions implanted into the substrate to monitor whether the rotation of the substrate has been normally performed. Preferably, a dosage of ions implanted into the substrate is calculated from a thermal wave value of the substrate and whether the rotation of the substrate has been normally performed is monitored by comparing the thermal wave value corresponding to the first shadow with a reference thermal wave value.

Abstract: A method of testing ion implantation equipment verifies the level of ion implantation energy. The method includes implanting first conductive ions in an implantation region in a semiconductor substrate, implanting second conductive ions, having valence different from that of the first conductive ions, in the implantation region so as to produce a second well, and subsequently measuring a sheet resistance of the semiconductor substrate. The implanting of the second conductive ions may be carried out while varying the level of the ion implantation energy. By forming a twin well in this way, and then measuring the sheet resistance, the value of the sheet resistance can be precisely correlated to the amount of energy used to form a well.

Abstract: A method for monitoring an ion implanter includes positioning a substrate behind an interceptor for intercepting a portion of an ion beam to be irradiated toward the substrate, irradiating a first ion beam toward the substrate to form a first shadow on the substrate, rotating the substrate about a central axis of the substrate, irradiating a second ion beam toward the substrate to form a second shadow on the substrate, and measuring a dosage of ions implanted into the substrate to monitor whether the rotation of the substrate has been normally performed. Preferably, a dosage of ions implanted into the substrate is calculated from a thermal wave value of the substrate and whether the rotation of the substrate has been normally performed is monitored by comparing the thermal wave value corresponding to the first shadow with a reference thermal wave value.