Abstract: A semiconductor device with EMI shield and a fabricating method thereof are provided. In one embodiment, the semiconductor device includes EMI shield on all six surfaces of the semiconductor device without the use of a discrete EMI lid.

Abstract: A vehicular heat management system includes a refrigerant circulation line configured to generate hot energy or cold energy depending on a flow direction of a refrigerant, a heater core side coolant circulation line configured to transfer refrigerant heat generated in the refrigerant circulation line to a heater core to heat a passenger compartment, and a battery side coolant circulation line configured to receive coolant heat of the heater core side coolant circulation line via a coolant and then circulate the coolant through a battery to preheat the battery.

Abstract: A vehicular heat management system for individually cooling and heating a plurality of air conditioning regions of a vehicle includes a plurality of refrigerant circulation lines configured to cool and heat the air conditioning regions individually shared by the refrigerant circulation lines. The refrigerant circulation lines are provided with one or more air conditioning units for individually cooling and heating the respective air conditioning regions, and are configured to supply a refrigerant to the corresponding air conditioning units to individually cool and heat the air conditioning regions corresponding to the air conditioning units.

Abstract: Extreme ultraviolet (EUV) exposure apparatuses and methods, and methods of manufacturing a semiconductor device by using the exposure method, which minimize an error caused by a mirror in an EUV exposure process to improve an overlay error, are provided. The EUV exposure apparatus includes an EUV source configured to generate and output EUV, first illumination optics configured to transfer the EUV to an EUV mask, projection optics configured to project the EUV, reflected from the EUV mask, onto an exposure target, a laser source configured to generate and output a laser beam for heating, and second illumination optics configured to irradiate the laser beam onto at least one mirror included in the projection optics.

Abstract: Extreme ultraviolet (EUV) exposure apparatuses and methods, and methods of manufacturing a semiconductor device by using the exposure method, which minimize an error caused by a mirror in an EUV exposure process to improve an overlay error, are provided. The EUV exposure apparatus includes an EUV source configured to generate and output EUV, first illumination optics configured to transfer the EUV to an EUV mask, projection optics configured to project the EUV, reflected from the EUV mask, onto an exposure target, a laser source configured to generate and output a laser beam for heating, and second illumination optics configured to irradiate the laser beam onto at least one mirror included in the projection optics.

Abstract: Extreme ultraviolet (EUV) exposure apparatuses and methods, and methods of manufacturing a semiconductor device by using the exposure method, which minimize an error caused by a mirror in an EUV exposure process to improve an overlay error, are provided. The EUV exposure apparatus includes an EUV source configured to generate and output EUV, first illumination optics configured to transfer the EUV to an EUV mask, projection optics configured to project the EUV, reflected from the EUV mask, onto an exposure target, a laser source configured to generate and output a laser beam for heating, and second illumination optics configured to irradiate the laser beam onto at least one mirror included in the projection optics.

Abstract: Extreme ultraviolet (EUV) exposure apparatuses and methods, and methods of manufacturing a semiconductor device by using the exposure method, which minimize an error caused by a mirror in an EUV exposure process to improve an overlay error, are provided. The EUV exposure apparatus includes an EUV source configured to generate and output EUV, first illumination optics configured to transfer the EUV to an EUV mask, projection optics configured to project the EUV, reflected from the EUV mask, onto an exposure target, a laser source configured to generate and output a laser beam for heating, and second illumination optics configured to irradiate the laser beam onto at least one mirror included in the projection optics.