Patents by Inventor Doo Hyeb Yoon

Doo Hyeb Yoon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Metal-insulator transition switching transistor and method for manufacturing the same
    Patent number: 7408217
    Abstract: Provided is a metal-insulator-transition switching transistor with a gate electrode on a silicon substrate (back-gate structure) and a metal-insulator-transition channel layer of VO2 that changes from an insulator phase to a metal phase, or vice versa, depending on a variation of an electric field, and a method for manufacturing the same, whereby it is possible to fabricate a metal-insulator-transition switching transistor having high current gain characteristics and being stable thermally.
    Type: Grant
    Filed: April 1, 2004
    Date of Patent: August 5, 2008
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Doo Hyeb Yoon, Hyun Tak Kim, Byung Gyu Chae, Kwang Yong Kang, Sung Lyul Maeng