Patents by Inventor Doo-hyung Kim

Doo-hyung Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electrostatic discharge protection circuit
    Patent number: 8705219
    Abstract: An electrostatic discharge (ESD) protection circuit includes a first power line; a second power line; a ground line; two stack transistors connected in series between the first power line and the ground line; a first resistor connected between the first power line and a first node; a first transistor and a capacitor connected in series between the first node and the ground line; a second transistor connected between the second power line and a second node; a third transistor connected between the first power line and a third node; an inverter, connected between the third node and the ground line, and having an input connected to the second node; a fourth transistor, connected to the first power line, and having a gate connected to the second node; and a fifth transistor, connected between the second power line and the third node, and having a gate connected to a terminal of the fourth transistor.
    Type: Grant
    Filed: January 18, 2013
    Date of Patent: April 22, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chan Hee Jeon, Doo Hyung Kim, Han Gu Kim, Woo Jin Seo, Ki Tae Lee, Hong Wook Lim
  • Pad interface circuit and method of improving reliability of the pad interface circuit
    Patent number: 8427795
    Abstract: The pad interface circuit includes a first stack MOS transistor having a first terminal connected to a pad and a bulk connected to a first supply voltage; a second stack MOS transistor having a first terminal connected to a second terminal of the first stack MOS transistor and a second terminal, a gate terminal, and a bulk that are connected to the first supply voltage; and a voltage level sensing circuit generating a feedback voltage by using a pad voltage applied from the pad. In addition, the feedback voltage is applied to a gate terminal of the first stack MOS transistor.
    Type: Grant
    Filed: January 21, 2010
    Date of Patent: April 23, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chan-hee Jeon, Han-gu Kim, Min-sun Hong, Tae-hoon Ha, Doo-hyung Kim, Jung-soon Lee
  • Pad interface circuit and method of improving reliability of the pad interface circuit
    Publication number: 20100208400
    Abstract: The pad interface circuit includes a first stack MOS transistor having a first terminal connected to a pad and a bulk connected to a first supply voltage; a second stack MOS transistor having a first terminal connected to a second terminal of the first stack MOS transistor and a second terminal, a gate terminal, and a bulk that are connected to the first supply voltage; and a voltage level sensing circuit generating a feedback voltage by using a pad voltage applied from the pad. In addition, the feedback voltage is applied to a gate terminal of the first stack MOS transistor.
    Type: Application
    Filed: January 21, 2010
    Publication date: August 19, 2010
    Inventors: Chan-hee Jeon, Han-gu Kim, Min-sun Hong, Tae-hoon Ha, Doo-hyung Kim, Jung-soon Lee