Abstract: The present disclosure relates to an organic electroluminescent device. The organic electroluminescent device of the present disclosure shows high luminous efficiency and good lifespan by comprising a specific combination of the plural kinds of host compounds and a specific hole transport compound.

Abstract: The present disclosure relates to a plurality of host materials, organic electroluminescent compounds, and organic electroluminescent devices comprising the same. By comprising specific combinations of compounds according to the present disclosure as the plurality of host materials or by comprising a compound according to the present disclosure, it is possible to provide organic electroluminescent devices having improved lifespan characteristics compared to conventional organic electroluminescent devices.

Abstract: The present disclosure relates to a plurality of host materials, an organic electroluminescent compound, and an organic electroluminescent device comprising the same. An organic electroluminescent device having improved driving voltage, luminous efficiency, and/or lifespan properties compared to a conventional organic electroluminescent device can be provided by including the specific combination of compounds according to the present disclosure as a plurality of host materials or by including the compound according to the present disclosure.

Abstract: The present disclosure relates to a plurality of host materials comprising a first host material comprising at least one compound represented by formula 1 and a second host material comprising at least one compound represented by formula 2, and an organic electroluminescent device comprising the same. An organic electroluminescent device having significantly improved lifetime properties is provided by comprising a specific combination of compounds according to the present disclosure as host materials.

Abstract: The present disclosure relates to an organic electroluminescent device. The organic electroluminescent device of the present disclosure shows high luminous efficiency and good lifespan by comprising a specific combination of the plural kinds of host compounds and a specific hole transport compound.

Abstract: The present invention relates to an altitude-dependent battery diagnosis system and method using a barometric pressure sensor, and relates to a battery diagnostic system and method of differently setting the diagnostic level and algorithm according to the altitude, diagnosing the state of the battery pack based on the diagnostic algorithm corresponding to the current altitude and precisely monitoring and diagnosing the state of the battery pack that changes according to the altitude.

Abstract: The present invention relates to a light guide plate, and a method and apparatus of manufacturing the same. The light guide plate includes; a transparent substrate including an active area and a dummy area defined in the periphery of the active area, wherein a groove for coupling other members is defined in the dummy area; and a pattern layer disposed on one surface of the substrate. The pattern layer is not disposed on the dummy area of the substrate, but disposed on the active area of the substrate. Since the pattern layer is formed on only the active are of the substrate using a spinless process, a material for forming the pattern layer may not be wasted to reduce material costs. Also, since a plurality of grooves are formed in the substrate before the pattern layer is formed on the substrate, conventional limitations, whereby it is difficult to perform a groove forming process due to a pattern layer cured by forming a plurality of grooves after the pattern layer is formed, may be overcome.

Abstract: The present invention relates to a preparation method of an optical member, comprising the following steps: coating a a mixture of methyl methacrylate (MMA) and a light diffuser on one surface of a substrate comprising poly methyl methacrylate (PMMA) by a predetermined pattern; polymerizing the coated methyl methacrylate into poly methyl methacrylate to form semi-cured polymethyl methacrylate; and completely curing the semi-cured polymethyl methacrylate, and an optical member prepared thereby.

Abstract: An apparatus and method of manufacturing polysilicon is disclosed, which is capable of shortening a time period required for manufacturing polysilicon by depositing polysilicon grains through a pyrolysis of silane gas by using a laser beam, and is capable of manufacturing an ingot by directly depositing polysilicon grains and melting the polysilicon grains without using an additional crystal seed, wherein the apparatus comprising a reaction chamber; a gas supplier for supplying a silane gas to the reaction chamber; a laser irradiator for generating polysilicon grains through a pyrolysis of the silane gas by irradiating with a laser beam the silane gas supplied from the gas supplier; and a polysilicon-grain receiver for receiving and storing the polysilicon grains.

Abstract: An apparatus and method of manufacturing polysilicon is disclosed, which is capable of shortening a time period required for manufacturing polysilicon by depositing polysilicon grains through a pyrolysis of silane gas by using laser beam, and is capable of manufacturing an ingot by directly depositing polysilicon grains and melting the polysilicon grains without using an additional crystal seed, wherein the apparatus comprising a reaction chamber; a gas supplier for supplying a silane gas to the reaction chamber; a laser irradiator for generating polysilicon grains through a pyrolysis of the silane gas by irradiating laser beam to the silane gas supplied from the gas supplier; and a polysilicon-grain receiver for receiving and storing the polysilicon grains.

Abstract: A method of fabricating a specimen for the observation and analysis of defects in a wafer includes the steps of: locating a position of a defect which exists in a patterned layer of a wafer on which a semiconductor device is formed; forming a photoresist layer on an outer side of the patterned layer at the position; drilling the wafer to form a hole from an underlying, outer portion of the wafer to the outer side, i.e., a top portion of the patterned layer where the diameter of the hole formed gradually decreases from the underlying portion to the top portion; and etching the drilled portion to remove the remaining residue.

Abstract: A method of fabricating a specimen for analyzing defects of a semiconductor device is disclosed. The method includes the steps of: cutting a wafer to be adjacent to a defective portion that exists in a patterned layer formed on a substrate; molding the first specimen with a resin; grinding the substrate of the first specimen with a predetermined slope; and etching the ground face to expose the defective layer, wherein the wafer includes a semiconductor substrate and patterned layers where memory devices are formed on the semiconductor substrate.