Abstract: A phase-change random access memory (PRAM) device and a method of manufacturing the same are provided. The PRAM device includes a semiconductor substrate in which a switching device is formed, a lower electrode configured to be formed on the switching device and having a void formed in a portion of an upper surface thereof, and a phase-change layer configured to be formed on the lower electrode having the void.

Abstract: A phase-change random access memory (PRAM) device and a method of manufacturing the same are provided. The PRAM device includes a semiconductor substrate in which a switching device is formed, a lower electrode configured to be formed on the switching device and having a void formed in a portion of an upper surface thereof, and a phase-change layer configured to be formed on the lower electrode having the void.

Abstract: A semiconductor device includes a word line, a bit line crossing the word line, an active region arranged in an oblique direction at the word line and the bit line, and a contact pad contacting the active region, where the contact pad extends in the oblique direction.

Abstract: A semiconductor device and method for fabricating the same is provided. The semiconductor device includes a trench formed in a substrate, a junction region formed in the substrate on both sides of the trench, a first gate insulation layer formed on the surface of the trench, a first buried conductive layer formed over the first gate insulation layer to fill a portion of the trench, a second buried conductive layer formed between the first buried conductive layer and the first gate insulation layer to provide a gap between the first buried conductive layer and the first gate insulation layer, and a second gate insulation layer buried in the gap.

Abstract: A semiconductor device includes a word line, a bit line crossing the word line, an active region arranged in an oblique direction at the word line and the bit line, and a contact pad contacting the active region, where the contact pad extends in the oblique direction.

Abstract: A semiconductor device and method for fabricating the same is provided. The semiconductor device includes a trench formed in a substrate, a junction region formed in the substrate on both sides of the trench, a first gate insulation layer formed on the surface of the trench, a first buried conductive layer formed over the first gate insulation layer to fill a portion of the trench, a second buried conductive layer formed between the first buried conductive layer and the first gate insulation layer to provide a gap between the first buried conductive layer and the first gate insulation layer, and a second gate insulation layer buried in the gap.