Abstract: An electronic device including a touch-enabled display module configured to display a plurality of windows according to a multi-window mode; and a control module configured to displaying on the touch screen a first application window and a second application window according to the multi-window mode, alter the first application window in response to a touchscreen input received via the touch-enabled display, and automatically alter the second application window in response to the alteration of the first application window.

Abstract: One aspect of the present invention relates to a lawn monitoring system, and more specifically, to a lawn monitoring system installed at various locations where lawn is created, such as a golf course, a soccer field, a baseball field, etc., to receive lawn status information, thereby enabling a lawn manager to manage the lawn based on the information received from the system. The lawn monitoring system according to an embodiment of the present invention has effects of accurately and efficiently transmitting the status information of the lawn in places where the lawn is created, such as a golf course, a soccer field, a baseball field, to a lawn manager.

Abstract: One aspect of the present invention relates to a lawn monitoring system, and more specifically, to a lawn monitoring system installed at various locations where lawn is created, such as a golf course, a soccer field, a baseball field, etc., to receive lawn status information, thereby enabling a lawn manager to manage the lawn based on the information received from the system. The lawn monitoring system according to an embodiment of the present invention has effects of accurately and efficiently transmitting the status information of the lawn in places where the lawn is created, such as a golf course, a soccer field, a baseball field, to a lawn manager.

Abstract: Disclosed is a Group III nitride semiconductor template for a 300-400 nm near-ultraviolet light emitting semiconductor device, the template including: a growth substrate; a nucleation layer based on AlxGa1-xN (0<x?1, x>y); and a monocrystalline Group III nitride semiconductor layer based on AlyGa1-yN (y>0), and a near-ultraviolet light emitting semiconductor device using the template.

Abstract: Disclosed is a Group III nitride semiconductor template for a 300-400 nm near-ultraviolet light emitting semiconductor device, the template including: a growth substrate; a nucleation layer based on AlxGa1-xN (0<x?1, x>y); and a monocrystalline Group III nitride semiconductor layer based on AlyGa1-yN (y>0), and a near-ultraviolet light emitting semiconductor device using the template.

Abstract: Disclosed is a Group III nitride semiconductor template for a 300-400 nm near-ultraviolet light emitting semiconductor device, the template including: a growth substrate; a nucleation layer based on AlxGa1-xN (0<x?1, x>y); and a monocrystalline Group III nitride semiconductor layer based on AlyGa1-yN (y>0), and a near-ultraviolet light emitting semiconductor device using the template.

Abstract: Disclosed are a adhesive composition and a method of surface-treating a molded article using the same. In particular, the adhesive composition may be eco-friendly because smell and VOC generation from the organic solvent are reduced by adding a water-dilutable polyurethane resin having a hydroxyl group to a waterborne polyurethane resin, thereby improving properties such as elastic recoverability and scratch resistance while satisfying conventional properties.

Abstract: A method for measuring boron concentration and an apparatus for performing the method are provided. The boron concentration measuring apparatus includes a reaction unit, an injection unit, a power supply unit, an electric current meter, a pH measuring device and an analysis unit to calculate the boron concentration with high reliability by calculating a mole concentration of boron ions through the analysis unit through calculating the titration time and the current amount during the titration time.

Abstract: An ultra-light polyurethane artificial leather composition comprises a one-component type blocked polyurethane high solid resin of 100 parts per weight, a capsule-type hollow microsphere of 1 to 10 parts per weight, a curing agent of 1 to 10 parts per weight, and a high solid type toner of 1 to 20 parts per weight.

Abstract: Disclosed are a adhesive composition and a method of surface-treating a molded article using the same. In particular, the adhesive composition may be eco-friendly because smell and VOC generation from the organic solvent are reduced by adding a water-dilutable polyurethane resin having a hydroxyl group to a waterborne polyurethane resin, thereby improving properties such as elastic recoverability and scratch resistance while satisfying conventional properties.

Abstract: Disclosed are a semiconductor device, a light emitting device, and a method of manufacturing the same. The semiconductor device includes a substrate, a plurality of rods aligned on the substrate, a metal layer disposed on the substrate between the rods, and a semiconductor layer disposed on and between the rods. Electrical and optical characteristics of the semiconductor device are improved due to the metal layer.

Abstract: The disclosure relates to an m-plane substrate, a growth inhibitor region located on the m-plane substrate, the growth inhibitor region having a plurality of windows for growing a III-nitride semiconductor, a seed layer formed at least at regions corresponding to the plurality of windows on the m-plane substrate, and a III-nitride semiconductor layer grown from the seed layer and coalesced after propagated along a-axis and c-axis directions.

Abstract: An ultra-light polyurethane artificial leather composition comprises a one-component type blocked polyurethane high solid resin of 100 parts per weight, a capsule-type hollow microsphere of 1 to 10 parts per weight, a curing agent of 1 to 10 parts per weight, and a high solid type toner of 1 to 20 parts per weight.

Abstract: A method for manufacturing a gallium nitride (GaN) wafer is provided. In the method for manufacturing the GaN wafer according to an embodiment, an etch stop layer is formed on a substrate, and a first GaN layer is formed on the etch stop layer. A portion of the first GaN layer is etched with a silane gas, and a second GaN layer is formed on the etched first GaN layer. A third GaN layer is formed on the second GaN layer.

Abstract: A method for manufacturing a gallium nitride (GaN) wafer is provided. In the method for manufacturing the GaN wafer according to an embodiment, an etch stop layer is formed on a substrate, and a first GaN layer is formed on the etch stop layer. A portion of the first GaN layer is etched with a silane gas, and a second GaN layer is formed on the etched first GaN layer. A third GaN layer is formed on the second GaN layer.

Abstract: Disclosed is a method for formation of a thermal bather coating on a gas turbine during operation thereof, which includes addition of an organic compound containing silicon to a fuel under a first condition in order to form a base layer on the surface of a part coming into contact with a combustion gas of the fuel in the gas turbine during operation thereof, as well as addition of the organic compound containing silicon to the fuel under a second condition in order to form a porous layer having more pores than the base layer above the base layer.

Abstract: A method for manufacturing a gallium nitride (GaN) wafer is provided. In the method for manufacturing the GaN wafer according to an embodiment, an etch stop layer is formed on a substrate, and a first GaN layer is formed on the etch stop layer. A portion of the first GaN layer is etched with a silane gas, and a second GaN layer is formed on the etched first GaN layer. A third GaN layer is formed on the second GaN layer.

Abstract: The present invention relates to a compound semiconductor substrate and a method for manufacturing the same. The present invention provides the manufacturing method which coats spherical balls on a substrate, forms a metal layer between the spherical balls, removes the spherical balls to form openings, and grows a compound semiconductor layer from the openings. According to the present invention, the manufacturing method can be simplified and grow a high quality compound semiconductor layer rapidly, simply and inexpensively, as compared with a conventional ELO (Epitaxial Lateral Overgrowth) method or a method for forming a compound semiconductor layer on a metal layer. And, the metal layer serves as one electrode of a light emitting device and a light reflecting film to provide a light emitting device having reduced power consumption and high light emitting efficiency.

Abstract: The present invention relates to a compound semiconductor substrate and a method for manufacturing the same. The present invention provides the manufacturing method which coats spherical balls on a substrate, forms a metal layer between the spherical balls, removes the spherical balls to form openings, and grows a compound semiconductor layer from the openings. According to the present invention, the manufacturing method can be simplified and grow a high quality compound semiconductor layer rapidly, simply and inexpensively, as compared with a conventional ELO (Epitaxial Lateral Overgrowth) method or a method for forming a compound semiconductor layer on a metal layer. And, the metal layer serves as one electrode of a light emitting device and a light reflecting film to provide a light emitting device having reduced power consumption and high light emitting efficiency.

Abstract: Provided is a method for preparing a compound semiconductor substrate. The method includes coating a plurality of spherical balls on a substrate, growing a compound semiconductor epitaxial layer on the substrate coated with the spherical balls while allowing voids to be formed under the spherical balls, and cooling the substrate on which the compound semiconductor epitaxial layer is grown so that the substrate and the compound semiconductor epitaxial layer are self-separated along the voids. The spherical ball treatment can reduce dislocation generations. In addition, because the substrate and the compound semiconductor epitaxial layer are separated through the self-separation, there is no need for laser lift-off process.