Abstract: A method for providing an occupancy status of shared facilities based on big data includes: receiving sensing data indicating an occupancy state of shared facilities from a facility sensing terminal in a residential space, in the residential space where a plurality of users live while sharing certain facilities of a house; generating information on an occupancy status for the shared facility based on the sensing data, residential space information collected for the residential space, and big data information collected for other residential spaces; and providing information on an occupancy status for the shared facility through a user application.

Abstract: This disclosure generally relates to a method for manufacturing a Group III-nitride semiconductor light emitting structure. In particular, it relates to a method for manufacturing a Group III-nitride semiconductor light emitting structure capable of shifting the emission wavelength towards to a longer wavelength through an appropriate barrier (the Group III-nitride semiconductor is composed of a compound of Al(x)Ga(y)In(1-x-y)N (0?x?1, 0?y?1, 0?x+y?1)).

Abstract: One aspect of the present invention relates to a lawn monitoring system, and more specifically, to a lawn monitoring system installed at various locations where lawn is created, such as a golf course, a soccer field, a baseball field, etc., to receive lawn status information, thereby enabling a lawn manager to manage the lawn based on the information received from the system. The lawn monitoring system according to an embodiment of the present invention has effects of accurately and efficiently transmitting the status information of the lawn in places where the lawn is created, such as a golf course, a soccer field, a baseball field, to a lawn manager.

Abstract: One aspect of the present invention relates to a lawn monitoring system, and more specifically, to a lawn monitoring system installed at various locations where lawn is created, such as a golf course, a soccer field, a baseball field, etc., to receive lawn status information, thereby enabling a lawn manager to manage the lawn based on the information received from the system. The lawn monitoring system according to an embodiment of the present invention has effects of accurately and efficiently transmitting the status information of the lawn in places where the lawn is created, such as a golf course, a soccer field, a baseball field, to a lawn manager.

Abstract: Disclosed is a Group III nitride semiconductor template for a 300-400 nm near-ultraviolet light emitting semiconductor device, the template including: a growth substrate; a nucleation layer based on AlxGa1-xN (0<x?1, x>y); and a monocrystalline Group III nitride semiconductor layer based on AlyGa1-yN (y>0), and a near-ultraviolet light emitting semiconductor device using the template.

Abstract: Disclosed is a Group III nitride semiconductor template for a 300-400 nm near-ultraviolet light emitting semiconductor device, the template including: a growth substrate; a nucleation layer based on AlxGa1-xN (0<x?1, x>y); and a monocrystalline Group III nitride semiconductor layer based on AlyGa1-yN (y>0), and a near-ultraviolet light emitting semiconductor device using the template.

Abstract: Disclosed is a Group III nitride semiconductor template for a 300-400 nm near-ultraviolet light emitting semiconductor device, the template including: a growth substrate; a nucleation layer based on AlxGa1-xN (0<x?1, x>y); and a monocrystalline Group III nitride semiconductor layer based on AlyGa1-yN (y>0), and a near-ultraviolet light emitting semiconductor device using the template.

Abstract: Disclosed are a adhesive composition and a method of surface-treating a molded article using the same. In particular, the adhesive composition may be eco-friendly because smell and VOC generation from the organic solvent are reduced by adding a water-dilutable polyurethane resin having a hydroxyl group to a waterborne polyurethane resin, thereby improving properties such as elastic recoverability and scratch resistance while satisfying conventional properties.

Abstract: A method for measuring boron concentration and an apparatus for performing the method are provided. The boron concentration measuring apparatus includes a reaction unit, an injection unit, a power supply unit, an electric current meter, a pH measuring device and an analysis unit to calculate the boron concentration with high reliability by calculating a mole concentration of boron ions through the analysis unit through calculating the titration time and the current amount during the titration time.

Abstract: An ultra-light polyurethane artificial leather composition comprises a one-component type blocked polyurethane high solid resin of 100 parts per weight, a capsule-type hollow microsphere of 1 to 10 parts per weight, a curing agent of 1 to 10 parts per weight, and a high solid type toner of 1 to 20 parts per weight.

Abstract: Disclosed are a adhesive composition and a method of surface-treating a molded article using the same. In particular, the adhesive composition may be eco-friendly because smell and VOC generation from the organic solvent are reduced by adding a water-dilutable polyurethane resin having a hydroxyl group to a waterborne polyurethane resin, thereby improving properties such as elastic recoverability and scratch resistance while satisfying conventional properties.

Abstract: Disclosed are a semiconductor device, a light emitting device, and a method of manufacturing the same. The semiconductor device includes a substrate, a plurality of rods aligned on the substrate, a metal layer disposed on the substrate between the rods, and a semiconductor layer disposed on and between the rods. Electrical and optical characteristics of the semiconductor device are improved due to the metal layer.

Abstract: The disclosure relates to an m-plane substrate, a growth inhibitor region located on the m-plane substrate, the growth inhibitor region having a plurality of windows for growing a III-nitride semiconductor, a seed layer formed at least at regions corresponding to the plurality of windows on the m-plane substrate, and a III-nitride semiconductor layer grown from the seed layer and coalesced after propagated along a-axis and c-axis directions.

Abstract: An ultra-light polyurethane artificial leather composition comprises a one-component type blocked polyurethane high solid resin of 100 parts per weight, a capsule-type hollow microsphere of 1 to 10 parts per weight, a curing agent of 1 to 10 parts per weight, and a high solid type toner of 1 to 20 parts per weight.

Abstract: A method for manufacturing a gallium nitride (GaN) wafer is provided. In the method for manufacturing the GaN wafer according to an embodiment, an etch stop layer is formed on a substrate, and a first GaN layer is formed on the etch stop layer. A portion of the first GaN layer is etched with a silane gas, and a second GaN layer is formed on the etched first GaN layer. A third GaN layer is formed on the second GaN layer.

Abstract: A method for manufacturing a gallium nitride (GaN) wafer is provided. In the method for manufacturing the GaN wafer according to an embodiment, an etch stop layer is formed on a substrate, and a first GaN layer is formed on the etch stop layer. A portion of the first GaN layer is etched with a silane gas, and a second GaN layer is formed on the etched first GaN layer. A third GaN layer is formed on the second GaN layer.

Abstract: Disclosed is a method for formation of a thermal bather coating on a gas turbine during operation thereof, which includes addition of an organic compound containing silicon to a fuel under a first condition in order to form a base layer on the surface of a part coming into contact with a combustion gas of the fuel in the gas turbine during operation thereof, as well as addition of the organic compound containing silicon to the fuel under a second condition in order to form a porous layer having more pores than the base layer above the base layer.

Abstract: A method for manufacturing a gallium nitride (GaN) wafer is provided. In the method for manufacturing the GaN wafer according to an embodiment, an etch stop layer is formed on a substrate, and a first GaN layer is formed on the etch stop layer. A portion of the first GaN layer is etched with a silane gas, and a second GaN layer is formed on the etched first GaN layer. A third GaN layer is formed on the second GaN layer.

Abstract: The present invention relates to a compound semiconductor substrate and a method for manufacturing the same. The present invention provides the manufacturing method which coats spherical balls on a substrate, forms a metal layer between the spherical balls, removes the spherical balls to form openings, and grows a compound semiconductor layer from the openings. According to the present invention, the manufacturing method can be simplified and grow a high quality compound semiconductor layer rapidly, simply and inexpensively, as compared with a conventional ELO (Epitaxial Lateral Overgrowth) method or a method for forming a compound semiconductor layer on a metal layer. And, the metal layer serves as one electrode of a light emitting device and a light reflecting film to provide a light emitting device having reduced power consumption and high light emitting efficiency.

Abstract: The present invention relates to a compound semiconductor substrate and a method for manufacturing the same. The present invention provides the manufacturing method which coats spherical balls on a substrate, forms a metal layer between the spherical balls, removes the spherical balls to form openings, and grows a compound semiconductor layer from the openings. According to the present invention, the manufacturing method can be simplified and grow a high quality compound semiconductor layer rapidly, simply and inexpensively, as compared with a conventional ELO (Epitaxial Lateral Overgrowth) method or a method for forming a compound semiconductor layer on a metal layer. And, the metal layer serves as one electrode of a light emitting device and a light reflecting film to provide a light emitting device having reduced power consumption and high light emitting efficiency.