Patents by Inventor Doo-Won Kwon
Doo-Won Kwon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20190198426Abstract: A semiconductor device including a via plug formed on a substrate and a metal layer for interconnection formed at an end of the via plug, wherein an insulating structure is under the metal layer for interconnection and the insulating structure has a different layered structure according to a positional relationship with the metal layer for interconnection is disclosed.Type: ApplicationFiled: July 12, 2018Publication date: June 27, 2019Applicant: Samsung Electronics Co., Ltd.Inventors: Min Jun CHOI, Doo Won KWON, Kwan Sik KIM, Tae Young SONG, Sung Hyun YOON
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Publication number: 20190189672Abstract: A semiconductor device may include a first sensor configured to sense light having a wavelength within a first wavelength range from incident light and generates a first electrical signal based on the sensed light and a second sensor configured to sense light having a wavelength within a second, different wavelength range from the incident light and generates a second electrical signal based on the sensed light. The first and second sensors may be electrically connected to each other via an intermediate connector, and the first sensor and the second sensor may share a pixel circuit that is electrically connected thereto via the intermediate connector. The first and second wavelength ranges may include infra-red and visible wavelength ranges, respectively. The first and second wavelength ranges may include different visible wavelength ranges.Type: ApplicationFiled: February 25, 2019Publication date: June 20, 2019Applicant: Samsung Electronics Co., Ltd.Inventors: Young Gu JIN, Doo Won KWON
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Publication number: 20190189671Abstract: A semiconductor device may include a first sensor configured to sense light having a wavelength within a first wavelength range from incident light and generates a first electrical signal based on the sensed light and a second sensor configured to sense light having a wavelength within a second, different wavelength range from the incident light and generates a second electrical signal based on the sensed light. The first and second sensors may be electrically connected to each other via an intermediate connector, and the first sensor and the second sensor may share a pixel circuit that is electrically connected thereto via the intermediate connector. The first and second wavelength ranges may include infra-red and visible wavelength ranges, respectively. The first and second wavelength ranges may include different visible wavelength ranges.Type: ApplicationFiled: February 25, 2019Publication date: June 20, 2019Applicant: Samsung Electronics Co., Ltd.Inventors: Young Gu JIN, Doo Won KWON
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Patent number: 10283554Abstract: A semiconductor device may include a first sensor configured to sense light having a wavelength within a first wavelength range from incident light and generates a first electrical signal based on the sensed light and a second sensor configured to sense light having a wavelength within a second, different wavelength range from the incident light and generates a second electrical signal based on the sensed light. The first and second sensors may be electrically connected to each other via an intermediate connector, and the first sensor and the second sensor may share a pixel circuit that is electrically connected thereto via the intermediate connector. The first and second wavelength ranges may include infra-red and visible wavelength ranges, respectively. The first and second wavelength ranges may include different visible wavelength ranges.Type: GrantFiled: March 6, 2017Date of Patent: May 7, 2019Assignee: Samsung Electronics Co., Ltd.Inventors: Young Gu Jin, Doo Won Kwon
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Publication number: 20190131336Abstract: An image sensing apparatus includes a first substrate structure, a second substrate structure, and a memory chip. The first substrate structure includes a pixel region having a photoelectric conversion element. The second substrate structure includes a first surface connected to the first substrate structure and a second surface opposite the first surface, and also includes a circuit region to drive the pixel region. The memory chip is mounted on the second surface of the second substrate structure. The first substrate structure and the second substrate structure are electrically connected by first connection vias passing through the first substrate structure. The second substrate structure and the memory chip are electrically connected by second connection vias passing through a portion of the second substrate structure. The first connection vias and the second connection vias are at different positions on a plane.Type: ApplicationFiled: June 26, 2018Publication date: May 2, 2019Inventors: Sung Hyun YOON, Doo Won KWON, Kwan Sik KIM, Tae Young SONG, Min Jun CHOI
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Publication number: 20190123088Abstract: A stacked complementary metal oxide semiconductor (CMOS) image sensor includes: a first semiconductor chip in which a plurality of pixels are in an upper area in a two-dimensional array structure and a first wiring layer is in a lower area; and a second semiconductor chip in which a second wiring layer is arranged in an upper area and logic elements are in a lower area, wherein the first semiconductor chip is coupled to the second semiconductor chip through a connection between a first metal pad in a first pad insulating layer in a lowermost portion of the first wiring layer and a second metal pad in a second pad insulating layer in an uppermost portion of the second wiring layer, and wherein a metal-insulator-metal (MIM) capacitor is in at least one of the first pad insulating layer and the second pad insulating layer.Type: ApplicationFiled: June 6, 2018Publication date: April 25, 2019Inventor: Doo-won Kwon
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Publication number: 20190103425Abstract: A method of manufacturing an image sensing apparatus includes: forming a first substrate structure including a first region of a pixel region, the first substrate structure having a first surface and a second surface; forming a second substrate structure including a circuit region for driving the pixel region, the second substrate structure having a third surface and a fourth surface; bonding the first substrate structure to the second substrate structure, such that the first surface is connected to the third surface; forming a second region of the pixel region on the second surface; forming a first connection via, the first connection via extending from the second surface to pass through the first substrate structure; mounting semiconductor chips on the fourth surface, using a conductive bump; and separating a stack structure of the first substrate structure, the second substrate structure, and the semiconductor chips into unit image sensing apparatuses.Type: ApplicationFiled: May 2, 2018Publication date: April 4, 2019Inventors: Sung Hyun YOON, Doo Won KWON, Kwan Sik KIM, In Gyu BAEK, Tae Young SONG
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Publication number: 20180069046Abstract: A semiconductor device may include a first sensor configured to sense light having a wavelength within a first wavelength range from incident light and generates a first electrical signal based on the sensed light and a second sensor configured to sense light having a wavelength within a second, different wavelength range from the incident light and generates a second electrical signal based on the sensed light. The first and second sensors may be electrically connected to each other via an intermediate connector, and the first sensor and the second sensor may share a pixel circuit that is electrically connected thereto via the intermediate connector. The first and second wavelength ranges may include infra-red and visible wavelength ranges, respectively. The first and second wavelength ranges may include different visible wavelength ranges.Type: ApplicationFiled: March 6, 2017Publication date: March 8, 2018Applicant: Samsung Electronics Co., Ltd.Inventors: Young Gu JIN, Doo Won Kwon
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Patent number: 9865638Abstract: A semiconductor device includes a first semiconductor substrate having a first wiring layer which includes a first conductive pad, a second semiconductor substrate disposed on the first semiconductor substrate and including a second wiring layer which includes a second conductive pad, a first oxide layer disposed on the second semiconductor substrate and containing a second end of an intermediate connection which extends vertically through the second semiconductor substrate and has a first end electrically connected to the second conductive pad, and a third semiconductor substrate disposed on the first oxide layer and including a third wiring layer which includes a third conductive pad. The second end of the intermediate connection layer is electrically connected to the third conductive pad via a metal bond.Type: GrantFiled: November 16, 2016Date of Patent: January 9, 2018Assignee: Samsung Electronics Co., Ltd.Inventor: Doo Won Kwon
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Publication number: 20170179181Abstract: A semiconductor device includes a first semiconductor substrate having a first wiring layer which includes a first conductive pad, a second semiconductor substrate disposed on the first semiconductor substrate and including a second wiring layer which includes a second conductive pad, a first oxide layer disposed on the second semiconductor substrate and containing a second end of an intermediate connection which extends vertically through the second semiconductor substrate and has a first end electrically connected to the second conductive pad, and a third semiconductor substrate disposed on the first oxide layer and including a third wiring layer which includes a third conductive pad. The second end of the intermediate connection layer is electrically connected to the third conductive pad via a metal bond.Type: ApplicationFiled: November 16, 2016Publication date: June 22, 2017Inventor: DOO WON KWON
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Patent number: 9209214Abstract: A semiconductor device includes a substrate including a front side and a back side opposite the front side, first P-type regions located adjacent to the back side and spaced apart from each other in the substrate, N-type regions located under the first P-type regions and spaced apart from each other in the substrate, and second P-type regions located adjacent to the back side and located between the first P-type regions.Type: GrantFiled: May 14, 2013Date of Patent: December 8, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Doo-Won Kwon, June-Mo Koo, Yun-Ki Lee, Se-Hoon Jang
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Patent number: 9165974Abstract: An electronic device may include a first semiconductor layer, a first electrode layer on the semiconductor layer, an adhesive insulating layer on the first electrode layer, a second electrode layer on the adhesive insulating layer, a second semiconductor layer. The first electrode layer may include a first plurality of electrodes, the first electrode layer may be between the adhesive insulating layer and the first semiconductor layer, and the adhesive insulating layer may include at least one of SiOCN, SiBN, and/or BN. The second electrode layer may include a second plurality of electrodes, the adhesive insulating layer may be between the first and second electrode layers, and the second electrode layer may be between the adhesive insulating layer and the second semiconductor layer.Type: GrantFiled: September 15, 2014Date of Patent: October 20, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Sung-kwan Kim, Doo-won Kwon, Jeong-ki Kim, Wook-hwan Kim, Byung-jun Park, Seung-hun Shin, June-taeg Lee, Ha-kyu Choi, Tae-seok Oh
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Publication number: 20150076649Abstract: An electronic device may include a first semiconductor layer, a first electrode layer on the semiconductor layer, an adhesive insulating layer on the first electrode layer, a second electrode layer on the adhesive insulating layer, a second semiconductor layer. The first electrode layer may include a first plurality of electrodes, the first electrode layer may be between the adhesive insulating layer and the first semiconductor layer, and the adhesive insulating layer may include at least one of SiOCN, SiBN, and/or BN. The second electrode layer may include a second plurality of electrodes, the adhesive insulating layer may be between the first and second electrode layers, and the second electrode layer may be between the adhesive insulating layer and the second semiconductor layer.Type: ApplicationFiled: September 15, 2014Publication date: March 19, 2015Inventors: Sung-kwan KIM, Doo-Won Kwon, Jeong-ki Kim, Wook-hwan Kim, Byung-jun Park, Seung-hun Shin, June-taeg Lee, Ha-kyu Choi, Tae-Seok Oh
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Patent number: 8836068Abstract: A backside illumination image sensor, a method of fabricating the same, and an electronic system including the backside illumination image sensor, the backside illumination image sensor including a semiconductor substrate, the semiconductor substrate having an upper surface and a lower surface; photodiodes in the semiconductor substrate; and metal interconnections below the semiconductor substrate, wherein each of the photodiodes includes a N-type region, a lower P-type region below the N-type region, and an upper P-type region on the N-type region.Type: GrantFiled: May 12, 2011Date of Patent: September 16, 2014Assignee: Samsung Electronics Co., Ltd.Inventor: Doo-Won Kwon
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Publication number: 20130307110Abstract: A semiconductor device includes a substrate including a front side and a back side opposite the front side, first P-type regions located adjacent to the back side and spaced apart from each other in the substrate, N-type regions located under the first P-type regions and spaced apart from each other in the substrate, and second P-type regions located adjacent to the back side and located between the first P-type regions.Type: ApplicationFiled: May 14, 2013Publication date: November 21, 2013Applicant: Samsung Electronics Co., Ltd.Inventors: Doo-Won KWON, June-Mo KOO, Yun-Ki LEE, Se-Hoon JANG
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Patent number: 8378440Abstract: A backside-illuminated image sensor includes photoelectric converters disposed in a front-side of a substrate and arranged to define pixels, back-side interlayer dielectric patterns disposed on the back-side of the substrate over the photoelectric converters, color filters arranged over the back-side interlayer dielectric patterns, and micro-lenses arranged over the color filters, wherein adjacent back-side interlayer dielectric patterns are separated by an intervening gap region having a refractive index less than that of the back-side interlayer dielectric patterns.Type: GrantFiled: December 29, 2009Date of Patent: February 19, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Doo-Won Kwon, Chang-Rok Moon
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Publication number: 20110291219Abstract: A backside illumination image sensor, a method of fabricating the same, and an electronic system including the backside illumination image sensor, the backside illumination image sensor including a semiconductor substrate, the semiconductor substrate having an upper surface and a lower surface; photodiodes in the semiconductor substrate; and metal interconnections below the semiconductor substrate, wherein each of the photodiodes includes a N-type region, a lower P-type region below the N-type region, and an upper P-type region on the N-type region.Type: ApplicationFiled: May 12, 2011Publication date: December 1, 2011Inventor: Doo-Won KWON
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Patent number: 8058180Abstract: This invention provides methods of fabricating semiconductor devices, wherein an alloy layer is formed on a semiconductor substrate to form a substrate structure, which methods include using an aqueous solution diluted ammonia and peroxide mixture (APM) to perform cleaning and/or wet etching treatment steps on the substrate structure.Type: GrantFiled: February 15, 2008Date of Patent: November 15, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Doo-Won Kwon, Hyung-Ho Ko, Chang-Sup Mun, Woo-Gwan Shim, Im-Soo Park, Yu-Kyung Kim, Jeong-Nam Han
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Patent number: 7892877Abstract: Provided is a method of manufacturing an image sensor which may include forming a plurality of photoelectric converters on a semiconductor substrate, forming a silicon nitride (SiN) film on the plurality of photoelectric converters, supplying plasma gas including hydrogen to the SiN film, and performing a heat treatment on the semiconductor substrate.Type: GrantFiled: July 27, 2007Date of Patent: February 22, 2011Assignee: Samsung Electronics Co., Ltd.Inventor: Doo-won Kwon
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Publication number: 20100176474Abstract: A backside-illuminated image sensor includes photoelectric converters disposed in a front-side of a substrate and arranged to define pixels, back-side interlayer dielectric patterns disposed on the back-side of the substrate over the photoelectric converters, color filters arranged over the back-side interlayer dielectric patterns, and micro-lenses arranged over the color filters, wherein adjacent back-side interlayer dielectric patterns are separated by an intervening gap region having a refractive index less than that of the back-side interlayer dielectric patterns.Type: ApplicationFiled: December 29, 2009Publication date: July 15, 2010Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Doo-Won KWON, Chang-Rok MOON