Patents by Inventor Doo-yeol Ryu
Doo-yeol Ryu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230097999Abstract: According to an embodiment of the present invention, a substrate processing apparatus including: a chamber in which a process is performed on a substrate; a susceptor installed in the chamber to support the substrate; and a showerhead installed above the susceptor, and the showerhead includes: a plurality of inner injection holes defined in an inner area corresponding to a portion above the substrate and injecting a reaction gas downward; and a plurality of outer injection holes defined in an outer area corresponding to a portion outside the inner area and injecting an inert gas along an inner wall of the chamber.Type: ApplicationFiled: September 27, 2022Publication date: March 30, 2023Applicant: EUGENE TECHNOLOGY CO., LTD.Inventors: Doo-Yeol RYU, Sang Don LEE, Wan Suk OH, Ho Min CHOI, Sung Gyun SON, Hyo Jin AHN
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Publication number: 20220049349Abstract: According to an embodiment of the present invention, a method for forming a thin film includes loading an object to be processed into a chamber, and while controlling the temperature of the object to be processed to be 400° C. or less, supplying an Si source gas and an oxidizing gas into the chamber to form a silicon oxide film on the surface of the object to be processed, wherein the oxidizing gas is heated to a temperature exceeding 400° C. before being supplied into the chamber.Type: ApplicationFiled: September 9, 2019Publication date: February 17, 2022Applicant: EUGENE TECHNOLOGY CO., LTD.Inventors: Jin Woong KIM, Seung Woo SHIN, Cha Young YOO, Woo Duck JUNG, Doo Yeol RYU, Sung Kil CHO, Ho Min CHOI, Wan Suk OH, Koon Woo LEE, Ki Ho KIM
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Patent number: 10796915Abstract: Provided is a method for forming an epitaxial layer at a low temperature. The method for forming the epitaxial layer includes transferring a substrate into an epitaxial chamber and performing an epitaxial process on the substrate to form an epitaxial layer on the substrate. The epitaxial process includes heating the substrate at a temperature of about 700° C. or less and injecting a silicon gas into the epitaxial chamber in a state in which the inside of the epitaxial chamber is adjusted to a pressure of about 300 Torr or less to form a first epitaxial layer, stopping the injection of the silicon gas and injecting a purge gas into the epitaxial chamber to perform first purge inside the epitaxial chamber, heating the substrate at a temperature of about 700° C.Type: GrantFiled: August 14, 2017Date of Patent: October 6, 2020Assignee: EUGENE TECHNOLOGY CO., LTD.Inventors: Doo Yeol Ryu, Seung Woo Shin, Cha Young Yoo, Woo Duck Jung, Ho Min Choi, Wan Suk Oh, Hui Sik Kim, Eun Ho Kim, Seong Jin Park
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Publication number: 20190304785Abstract: Provided is a method for forming an epitaxial layer at a low temperature. The method for forming the epitaxial layer includes transferring a substrate into an epitaxial chamber and performing an epitaxial process on the substrate to form an epitaxial layer on the substrate. The epitaxial process includes heating the substrate at a temperature of about 700° C. or less and injecting a silicon gas into the epitaxial chamber in a state in which the inside of the epitaxial chamber is adjusted to a pressure of about 300 Torr or less to form a first epitaxial layer, stopping the injection of the silicon gas and injecting a purge gas into the epitaxial chamber to perform first purge inside the epitaxial chamber, heating the substrate at a temperature of about 700° C.Type: ApplicationFiled: August 14, 2017Publication date: October 3, 2019Applicant: EUGENE TECHNOLOGY CO., LTD.Inventors: Doo Yeol RYU, Seung Woo SHIN, Cha Young YOO, Woo Duck JUNG, Ho Min CHOI, Wan Suk OH, Hui Sik KIM, Eun Ho KIM, Seong Jin PARK
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Patent number: 9704975Abstract: A non-volatile memory device includes a semiconductor substrate, a well region situated on the semiconductor substrate, a floating gate situated on the well region, a floating gate channel region, a control gate situated on both sides of the floating gate, a control gate channel region, and an ion implantation area for regulating a program threshold voltage integrally formed between an area underneath of the floating gate and the control gate and a foreside of the well region, wherein a doping concentration of the ion implantation area for regulating a program threshold voltage is greater than a doping concentration of the well region. Therefore, the non-volatile memory device of examples integrally forms an ion implantation area for regulating a program threshold voltage irrespective of a channel region of a floating gate and a control gate so as to guarantee durability of a non-volatile memory device.Type: GrantFiled: September 11, 2015Date of Patent: July 11, 2017Assignee: Magnachip Semiconductor, Ltd.Inventors: Doo Yeol Ryu, Jeong Ho Cho, Kyung Ho Lee
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Publication number: 20160093707Abstract: A non-volatile memory device includes a semiconductor substrate, a well region situated on the semiconductor substrate, a floating gate situated on the well region, a floating gate channel region, a control gate situated on both sides of the floating gate, a control gate channel region, and an ion implantation area for regulating a program threshold voltage integrally formed between an area underneath of the floating gate and the control gate and a foreside of the well region, wherein a doping concentration of the ion implantation area for regulating a program threshold voltage is greater than a doping concentration of the well region. Therefore, the non-volatile memory device of examples integrally forms an ion implantation area for regulating a program threshold voltage irrespective of a channel region of a floating gate and a control gate so as to guarantee durability of a non-volatile memory device.Type: ApplicationFiled: September 11, 2015Publication date: March 31, 2016Applicant: MAGNACHIP SEMICONDUCTOR, LTD.Inventors: Doo Yeol Ryu, Jeong Ho Cho, Kyung Ho Lee
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Patent number: 8674427Abstract: A nonvolatile memory device and a method of manufacturing thereof are provided. The method includes forming a floating gate on a substrate, forming a dielectric layer to conform to a shape of the floating gate, forming a conductive layer to form a control gate on the substrate, the control gate covering the floating gate and the dielectric layer, forming a photoresist pattern on one side of the conductive layer, forming the control gate in the form of a spacer to surround sides of the floating gate, the forming of the control gate including performing an etch-back on the conductive layer until a portion of the dielectric layer on the floating gate is exposed, and forming a poly pad, to which a plurality of contact plugs are connected, on one side of the control gate, the forming of the poly pad including removing the photoresist pattern.Type: GrantFiled: May 11, 2012Date of Patent: March 18, 2014Assignee: Magnachip Semiconductor, Ltd.Inventors: Jeong-ho Cho, Jung-goo Park, Min-wan Chu, Doo-yeol Ryu
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Publication number: 20130099301Abstract: A nonvolatile memory device and a method of manufacturing thereof are provided. The method includes forming a floating gate on a substrate, forming a dielectric layer to conform to a shape of the floating gate, forming a conductive layer to form a control gate on the substrate, the control gate covering the floating gate and the dielectric layer, forming a photoresist pattern on one side of the conductive layer, forming the control gate in the form of a spacer to surround sides of the floating gate, the forming of the control gate including performing an etch-back on the conductive layer until a portion of the dielectric layer on the floating gate is exposed, and forming a poly pad, to which a plurality of contact plugs are connected, on one side of the control gate, the forming of the poly pad including removing the photoresist pattern.Type: ApplicationFiled: May 11, 2012Publication date: April 25, 2013Applicant: MAGNACHIP SEMICONDUCTOR, LTD.Inventors: Jeong-ho Cho, Jung-goo Park, Min-wan Chu, Doo-yeol Ryu