Patents by Inventor Doo Yeoul Yang

Doo Yeoul Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Film bulk acoustic resonator with improved lateral mode suppression
    Patent number: 6693500
    Abstract: A film bulk acoustic resonator includes a substrate, a membrane, a piezoelectric layer and a pair of electrodes. The membrane is formed on the substrate to form an air gap. The piezoelectric layer is formed on the membrane. The electrodes are formed on both surfaces of the piezoelectric layer to partially overlap each other. All the sides of the piezoelectric layer and the electrodes are curved.
    Type: Grant
    Filed: April 16, 2002
    Date of Patent: February 17, 2004
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Doo Yeoul Yang, Hong Wook Kim
  • Crystal oscillator with improved shock resistance
    Patent number: 6628048
    Abstract: A crystal oscillator with an improved shock resistance is disclosed. A pair of supporting protuberances protrude within an oscillator main body. A conductive adhesive is spread on the pair of the supporting protuberances, and a quartz blank is bonded to the supporting protuberances across the conductive adhesive. Further, an insulating resin layer is disposed between the quartz blank and a cover so as to elastically press down the conductive adhesive. Further, the length of the connecting parts between the supporting part and the bridge parts is more extended to a certain degree, so that any stress imposed on them can be dispersed.
    Type: Grant
    Filed: April 13, 2001
    Date of Patent: September 30, 2003
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Yang Ho Moon, Doo Yeoul Yang, Hong Wook Kim
  • Film bulk acoustic resonator with improved lateral mode suppression
    Publication number: 20020196103
    Abstract: Disclosed herein is a film bulk acoustic resonator. The film bulk acoustic resonator includes a substrate, a membrane, a piezoelectric layer and a pair of electrode. The membrane is formed on the substrate to form an air gap. The piezoelectric layer is formed on the membrane. The electrodes are formed on both surfaces of the piezoelectric layer to be partially opposite and overlapped. All the sides of the piezoelectric layers and the electrodes are curved.
    Type: Application
    Filed: April 16, 2002
    Publication date: December 26, 2002
    Applicant: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Doo Yeoul Yang, Hong Wook Kim
  • Crystal oscillator with improved shock resistance
    Publication number: 20020096974
    Abstract: A crystal oscillator with an improved shock resistance is disclosed. A pair of supporting protuberances protrude within an oscillator main body. A conductive adhesive is spread on the pair of the supporting protuberances, and a quartz blank is bonded to the supporting protuberances across the conductive adhesive. Further, an insulating resin layer is disposed between the quartz blank and a cover so as to elastically press down the conductive adhesive. Further, the length of the connecting parts between the supporting part and the bridge parts is more extended to a certain degree, so that any stress imposed on them can be dispersed.
    Type: Application
    Filed: April 13, 2001
    Publication date: July 25, 2002
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD
    Inventors: Yang Ho Moon, Doo Yeoul Yang, Hong Wook Kim