Patents by Inventor Doo Yoon

Doo Yoon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20070069193
    Abstract: Provided is a metal-insulator-transition switching transistor with a gate electrode on a silicon substrate (back-gate structure) and a metal-insulator-transition channel layer of VO2 that changes from an insulator phase to a metal phase, or vice versa, depending on a variation of an electric field, and a method for manufacturing the same, whereby it is possible to fabricate a metal-insulator-transition switching transistor having high current gain characteristics and being stable thermally.
    Type: Application
    Filed: April 1, 2004
    Publication date: March 29, 2007
    Inventors: Doo Yoon, Hyun Kim, Byung Chae, Kwang Kang, Sung Maeng