Abstract: The present invention relates to an image stabilization control device for an imaging device, the image stabilization control device stabilizing the shaking of a subject, caused by vibration applied to an imaging device, and comprising: filters for outputting rotational angular speed data in which a low-frequency component is removed from a rotational angular speed outputted from each of vibration detection sensors of an imaging device according to filter coefficients, which are variably set; a lens moving distance calculation unit processing output signals of the filters so as to calculate a lens moving distance; and a filter coefficient variable control unit for varying the filter coefficients of the filters in order to increase a lens return speed in a lens movement limited area, when the lens moving distance outputted from the lens moving distance calculation unit goes beyond the lens movement limit area having been virtually set.

Abstract: The present invention relates to an image stabilization control device for an imaging device, the image stabilization control device stabilizing the shaking of a subject, caused by vibration applied to an imaging device, and comprising: filters for outputting rotational angular speed data in which a low-frequency component is removed from a rotational angular speed outputted from each of vibration detection sensors of an imaging device according to filter coefficients, which are variably set; a lens moving distance calculation unit processing output signals of the filters so as to calculate a lens moving distance; and a filter coefficient variable control unit for varying the filter coefficients of the filters in order to increase a lens return speed in a lens movement limited area, when the lens moving distance outputted from the lens moving distance calculation unit goes beyond the lens movement limit area having been virtually set.

Abstract: A semiconductor memory device and method of fabricating same is provided that has a plurality of ferroelectric memory cells and reference cells. The semiconductor memory device includes a capacitor of each memory cell being the same size as that of each reference cell. A voltage applied to each reference cell is higher than a voltage applied to each memory cell to read data out of the semiconductor memory device. A method of fabricating a ferroelectric substance for a semiconductor memory device includes dissolving zirconium n-butoxide and titanium iso-proxide in 2-methoxyethanol; chelating a resultant, obtained by dissolution, with acetylacetone; adding lanthanium (La) iso-proxide to the resultant and refluxing the resultant; adding lead (Pb) acetate trihydrate to the resultant, and stirring the resultant, using a nitric acid as a catalyzer; and carrying out spin-coating and thermal treatment processes on the resultant.

Abstract: A nonvolatile ferroelectric memory comprising a main memory cell blocks including first and second wordlines, a first cell transistor whose gate is connected to the first wordline and one electrode which is connected to a bitline, a second transistor whose gate is connected to the second wordline and one electrode which is connected to a bit bar line, a first ferroelectric capacitor whose first electrode is connected to the other electrode of the first transistor. Also including reference cell blocks formed to correspond to the main memory cell blocks for reading out data of the memory cell blocks.

Abstract: A method for forming a gate oxide film includes the steps of: activating either one of deutrium and oxygen through remote plasma process; introducing deutrium and oxygen into a reactive chamber through a sufficiently isolated gas injection units; pyro-reacting deutrium and oxygen to form deuterium vapor; and heating a silicon wafer at an atmosphere of the deutrium vapor and forming a gate silicon oxide film of which silicon dangling bond on the silicon wafer surface makes a Si—D bonding. The silicon dangling bond existing at the interface between the silicon and the SiO2 gate oxide film makes the Si—D bonding, stronger than Si—H bonding, to form the SiO2 film. Therefore, a gate oxide film having an excellent film quality can be formed. In addition, the oxidation is performed at a comparatively low temperature, so that the problem of difficulty in controlling a threshold voltage as the dopant doped at the lower portion of the gate oxide film is diffused outwardly is solved.

Abstract: A semiconductor memory device and method of fabricating same is provided that has a plurality of ferroelectric memory cells and reference cells. The semiconductor memory device includes a capacitor of each memory cell being the same size as that of each reference cell. A voltage applied to each reference cell is higher than a voltage applied to each memory cell to read data out of the semiconductor memory device. A method of fabricating a ferroelectric substance for a semiconductor memory device includes dissolving zirconium n-butoxide and titanium iso-proxide in 2-methoxyethanol; chelating a resultant, obtained by dissolution, with acetylacetone; adding lanthanium (La) iso-proxide to the resultant and refluxing the resultant; adding lead (Pb) acetate trihydrate to the resultant, and stirring the resultant, using a nitric acid as a catalyzer; and carrying out spin-coating and thermal treatment processes on the resultant.

Abstract: A nonvolatile memory has a cell structure of one transistor/one capacitor/one resistor (1T/1C/1R). Such a structure allows high speed access operation and efficiently prevent a reference cell from being degraded. The nonvolatile memory includes a first memory cell array having a plurality of first word lines formed in a first direction, a plurality of bit lines in a second direction, a first common signal line formed in one of first and second directions, and a plurality of first memory cells. Each first memory cell is coupled to a corresponding first word line, a corresponding bit line, and the first common signal line. A controller is coupled to the plurality of bit lines, and the controller allows at least one of reading of data stored in a corresponding first memory cell and writing of data to a corresponding first memory cell.

Abstract: Nonvolatile ferroelectric memory, is disclosed, which has a simple circuit and a fast access time and allows a non-destructive read mode; and a circuit for controlling the same, the memory including a wordline for applying a driving signal, a bitline and a bitbarlines for applying data signals, a ferroelectric capacitor for storing the data, a first, and a second switching devices for switching between opposite terminals on the ferroelectric capacitor and the bitline and the bitbarline respectively in response to a control signal from the wordline, and an amplifier for amplifying voltages from the opposite terminals on the ferroelectric capacitor.

Abstract: A method for fabricating a capacitor of a semiconductor device in which its process is simplified and capacitance is efficiently improved is disclosed, including the steps of preparing a semiconductor substrate equipped with a transistor; forming a plug electrically connected to an impurity region of the transistor; forming a Si--H boding layer on surface of the plug; detaching H ions from the Si--H bonding layer so as to form a SiO.sub.x layer; and forming an electrode over the plug.