Abstract: A semiconductor light emitting device package includes: a substrate; a first semiconductor layer including first regions including a first-type semiconductor material and having a first height, and a second region disposed between the first regions and having a second height lower than the first height; an active layer including disposed in the first regions, and emitting light of a predetermined wavelength band; a second semiconductor layer disposed on the active layer and formed of a second-type semiconductor material; a third semiconductor layer disposed on the second semiconductor layer, and formed of a second-type semiconductor material different from the second-type semiconductor material of the second semiconductor layer; a transparent electrode layer including disposed on the third semiconductor layer; and a reflective electrode layer electrically connected to the transparent electrode layer, respectively, and including portions overlapping the active layer in a vertical direction and a horizontal dir

Abstract: A display apparatus includes a circuit board including driving circuits; and a pixel array on the circuit board and including a plurality of pixels, wherein the pixel array includes LED cells having a pillar shape and including first and second conductivity-type semiconductor layers and an active layer, wherein a width thereof is 100 ?m or less, and a height thereof is greater than the width; a transparent electrode on lower surfaces of the LED cells and including a cone or pyramid-shaped inclined portion; a passivation layer disposed on side surfaces of the LED cells and extending from a side surface of the LED cell to a side surface of the inclined portion of the transparent electrode.

Abstract: A semiconductor light emitting device includes a first conductivity type semiconductor layer, a second conductivity type semiconductor layer arranged on the first conductivity type semiconductor layer, an active layer, an electrode layer formed on a top surface of the second conductivity type semiconductor layer, a reflective layer formed on a part of a top surface of the electrode layer, a bonding pad formed on a top surface of the reflective layer, an insulating layer formed on another part of the top surface of the electrode layer, and an insulating spacer conformally formed along a surface of the substrate. The reflective layer includes a material that is not etched by an aqueous solution including one of tetramethyl ammonium hydroxide (TMAH), KOH, NaOH, and NH4OH and the bonding pad has a shell shape including a part of which the width gradually decreases as the part distances from the reflective layer.

Abstract: A semiconductor light emitting device package includes: a substrate; a first semiconductor layer including first regions including a first-type semiconductor material and having a first height, and a second region disposed between the first regions and having a second height lower than the first height; an active layer including disposed in the first regions, and emitting light of a predetermined wavelength band; a second semiconductor layer disposed on the active layer and formed of a second-type semiconductor material; a third semiconductor layer disposed on the second semiconductor layer, and formed of a second-type semiconductor material different from the second-type semiconductor material of the second semiconductor layer; a transparent electrode layer including disposed on the third semiconductor layer; and a reflective electrode layer electrically connected to the transparent electrode layer, respectively, and including portions overlapping the active layer in a vertical direction and a horizontal dir