Abstract: A display device includes a substrate, a first assembly wiring and second assembly wiring on the substrate, a first insulating layer on the first and second assembly wirings, a barrier wall comprising a hole on the first insulating layer, a semiconductor light emitting device in the hole, and a connection part is configured to electrically connect a side of the semiconductor light emitting device and at least one assembly wiring of the first and second assembly wirings. A gap between an inner surface of the hole and an outer surface of the semiconductor light emitting device is 50% to 200% of a thickness of the semiconductor light emitting device.

Abstract: A solar cell can include a photoelectric conversion unit including a semiconductor substrate, a tunneling layer disposed on the semiconductor substrate, a first conductive type region and a second conductive type region disposed on the tunneling layer at a same side of the semiconductor substrate, and a barrier region disposed between the first and second conductive type regions; and an electrode disposed on the photoelectric conversion unit and including an adhesive layer disposed on the first and second conductive type regions, and an electrode layer disposed on the adhesive layer, in which the adhesive layer has a coefficient of thermal expansion that is greater than a coefficient of thermal expansion of the photoelectric conversion unit and is less than a coefficient of thermal expansion of the electrode layer.

Abstract: A solar cell can include a photoelectric conversion unit including a semiconductor substrate, a tunneling layer disposed on the semiconductor substrate, a first conductive type region and a second conductive type region disposed on the tunneling layer at a same side of the semiconductor substrate, and a barrier region disposed between the first and second conductive type regions; and an electrode disposed on the photoelectric conversion unit and including an adhesive layer disposed on the first and second conductive type regions, and an electrode layer disposed on the adhesive layer, in which the adhesive layer has a coefficient of thermal expansion that is greater than a coefficient of thermal expansion of the photoelectric conversion unit and is less than a coefficient of thermal expansion of the electrode layer.

Abstract: A solar cell is discussed. The solar cell according to an embodiment includes a photoelectric conversion unit including a first conductive type region and a second conductive type region formed on the same side of the photoelectric conversion unit; and an electrode formed on the photoelectric conversion unit and including an adhesive layer formed on the photoelectric conversion unit and an electrode layer formed on the adhesive layer, wherein the adhesive layer has a coefficient of thermal expansion that is greater than a coefficient of thermal expansion of the photoelectric conversion unit and is less than a coefficient of thermal expansion of the electrode layer.

Abstract: A solar cell is discussed. The solar cell according to an embodiment includes a photoelectric conversion unit including a first conductive type region and a second conductive type region formed on the same side of the photoelectric conversion unit; and an electrode formed on the photoelectric conversion unit and including an adhesive layer formed on the photoelectric conversion unit and an electrode layer formed on the adhesive layer, wherein the adhesive layer has a coefficient of thermal expansion that is greater than a coefficient of thermal expansion of the photoelectric conversion unit and is less than a coefficient of thermal expansion of the electrode layer.

Abstract: A solar cell is disclosed. The solar cell includes a semiconductor substrate, a conductive region formed at the semiconductor substrate and having a conductive type identical to or different from that of the semiconductor substrate, a passivation film formed on the semiconductor substrate so as to cover the conductive region, and an electrode electrically connected to at least one of the semiconductor substrate and the conductive region. The passivation film includes a first layer formed on the conductive region and including silicon oxide, a second layer formed on the first layer and including an oxide having a negative charge, and a third layer formed on the second layer and having an index of refraction different from that of the second layer.