Patents by Inventor Doowon Suh

Doowon Suh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Copper-containing C4 ball-limiting metallurgy stack for enhanced reliability of packaged structures and method of making same
    Patent number: 10037956
    Abstract: The invention relates to a ball-limiting metallurgy stack for an electrical device that contains at least one copper layer disposed upon a Ti adhesion metal layer. The ball-limiting metallurgy stack resists Sn migration toward the upper metallization of the device.
    Type: Grant
    Filed: January 14, 2015
    Date of Patent: July 31, 2018
    Assignee: Intel Corporation
    Inventors: Madhav Datta, Dave Emory, Subhash M. Joshi, Susanne Menezes, Doowon Suh
  • COPPER-CONTAINING C4 BALL-LIMITING METALLURGY STACK FOR ENHANCED RELIABILITY OF PACKAGED STRUCTURES AND METHOD OF MAKING SAME
    Publication number: 20170141062
    Abstract: The invention relates to a ball-limiting metallurgy stack for an electrical device that contains at least one copper layer disposed upon a Ti adhesion metal layer. The ball-limiting metallurgy stack resists Sn migration toward the upper metallization of the device.
    Type: Application
    Filed: January 30, 2017
    Publication date: May 18, 2017
    Inventors: Madhav Datta, Dave Emory, Subhash M. Joshi, Susanne Menezes, Doowon Suh
  • Light emitting diodes including integrated backside reflector and die attach
    Patent number: 9437785
    Abstract: Light emitting diodes include a silicon carbide substrate having first and second opposing faces, a diode region on the first face, anode and cathode contacts on the diode region opposite the silicon carbide substrate and a hybrid reflector on the silicon carbide substrate opposite the diode region. The hybrid reflector includes a transparent layer having an index of refraction that is lower than the silicon carbide substrate, and a reflective layer on the transparent layer, opposite the substrate. A die attach layer may be provided on the hybrid reflector, opposite the silicon carbide substrate. A barrier layer may be provided between the hybrid reflector and the die attach layer.
    Type: Grant
    Filed: August 10, 2009
    Date of Patent: September 6, 2016
    Assignee: Cree, Inc.
    Inventors: Michael John Bergmann, Kevin Ward Haberern, Bradley E. Williams, Winston T. Parker, Arthur Fong-Yuen Pun, Doowon Suh, Matthew Donofrio
  • COPPER-CONTAINING C4 BALL-LIMITING METALLURGY STACK FOR ENHANCED RELIABILITY OF PACKAGED STRUCTURES AND METHOD OF MAKING SAME
    Publication number: 20150132940
    Abstract: The invention relates to a ball-limiting metallurgy stack for an electrical device that contains at least one copper layer disposed upon a Ti adhesion metal layer. The ball-limiting metallurgy stack resists Sn migration toward the upper metallization of the device.
    Type: Application
    Filed: January 14, 2015
    Publication date: May 14, 2015
    Applicant: INTEL CORPORATION
    Inventors: Madhav Datta, Dave Emory, Subhash M. Joshi, Susanne Menezes, Doowon Suh
  • Copper-containing C4 ball-limiting metallurgy stack for enhanced reliability of packaged structures and method of making same
    Patent number: 8952550
    Abstract: The invention relates to a ball-limiting metallurgy stack for an electrical device that contains at least one copper layer disposed upon a Ti adhesion metal layer. The ball-limiting metallurgy stack resists Sn migration toward the upper metallization of the device.
    Type: Grant
    Filed: January 12, 2010
    Date of Patent: February 10, 2015
    Assignee: Intel Corporation
    Inventors: Madhav Datta, Dave Emory, Subhash M. Joshi, Susanne Menezes, Doowon Suh
  • LIGHT EMITTING DIODES INCLUDING INTEGRATED BACKSIDE REFLECTOR AND DIE ATTACH
    Publication number: 20110031502
    Abstract: Light emitting diodes include a silicon carbide substrate having first and second opposing faces, a diode region on the first face, anode and cathode contacts on the diode region opposite the silicon carbide substrate and a hybrid reflector on the silicon carbide substrate opposite the diode region. The hybrid reflector includes a transparent layer having an index of refraction that is lower than the silicon carbide substrate, and a reflective layer on the transparent layer, opposite the substrate. A die attach layer may be provided on the hybrid reflector, opposite the silicon carbide substrate. A barrier layer may be provided between the hybrid reflector and the die attach layer.
    Type: Application
    Filed: August 10, 2009
    Publication date: February 10, 2011
    Inventors: Michael John Bergmann, Kevin Ward Haberern, Bradley E. Williams, Winston T. Parker, Arthur Fong-Yuen Pun, Doowon Suh, Matthew Donofrio
  • Copper-containing C4 ball-limiting metallurgy stack for enhanced reliability of packaged structures and method of making same
    Publication number: 20100117229
    Abstract: The invention relates to a ball-limiting metallurgy stack for an electrical device that contains at least one copper layer disposed upon a Ti adhesion metal layer. The ball-limiting metallurgy stack resists Sn migration toward the upper metallization of the device.
    Type: Application
    Filed: January 12, 2010
    Publication date: May 13, 2010
    Inventors: Madhav Datta, Dave Emory, Subhash M. Joshi, Susanne Menezes, Doowon Suh
  • Copper-containing C4 ball-limiting metallurgy stack for enhanced reliability of packaged structures and method of making same
    Patent number: 7250678
    Abstract: The invention relates to a ball-limiting metallurgy stack for an electrical device that contains at least one copper layer disposed upon a Ti adhesion metal layer. The ball-limiting metallurgy stack resists Sn migration toward the upper metallization of the device.
    Type: Grant
    Filed: February 10, 2004
    Date of Patent: July 31, 2007
    Assignee: Intel Corporation
    Inventors: Madhav Datta, Dave Emory, Subhash M. Joshi, Susanne Menezes, Doowon Suh
  • Copper-containing C4 ball-limiting metallurgy stack for enhanced reliability of packaged structures and method of making same
    Patent number: 7196001
    Abstract: The invention relates to a ball-limiting metallurgy stack for an electrical device that contains at least one copper layer disposed upon a Ti adhesion metal layer. The ball-limiting metallurgy stack resists Sn migration toward the upper metallization of the device.
    Type: Grant
    Filed: February 10, 2004
    Date of Patent: March 27, 2007
    Assignee: Intel Corporation
    Inventors: Madhav Datta, Dave Emory, Subhash M. Joshi, Susanne Menezes, Doowon Suh
  • Copper-containing C4 ball-limiting metallurgy stack for enhanced reliability of packaged structures and method of making same
    Publication number: 20060148233
    Abstract: The invention relates to a ball-limiting metallurgy stack for an electrical device that contains at least one copper layer disposed upon a Ti adhesion metal layer. The ball-limiting metallurgy stack resists Sn migration toward the upper metallization of the device.
    Type: Application
    Filed: March 1, 2006
    Publication date: July 6, 2006
    Inventors: Madhav Datta, Dave Emory, Subhash Joshi, Susanne Menezes, Doowon Suh
  • Copper-containing C4 ball-limiting metallurgy stack for enhanced reliability of packaged structures and method of making same
    Patent number: 6853076
    Abstract: The invention relates to a ball-limiting metallurgy stack for an electrical device that contains at least one copper layer disposed upon a Ti adhesion metal layer. The ball-limiting metallurgy stack resists Sn migration toward the upper metallization of the device.
    Type: Grant
    Filed: September 21, 2001
    Date of Patent: February 8, 2005
    Assignee: Intel Corporation
    Inventors: Madhav Datta, Dave Emory, Subhash M. Joshi, Susanne Menezes, Doowon Suh
  • Copper-containing C4 ball-limiting metallurgy stack for enhanced reliability of packaged structures and method of making same
    Publication number: 20040159947
    Abstract: The invention relates to a ball-limiting metallurgy stack for an electrical device that contains at least one copper layer disposed upon a Ti adhesion metal layer. The ball-limiting metallurgy stack resists Sn migration toward the upper metallization of the device.
    Type: Application
    Filed: February 10, 2004
    Publication date: August 19, 2004
    Inventors: Madhav Datta, Dave Emory, Subhash M. Joshi, Susanne Menezes, Doowon Suh
  • Copper-containing C4 ball-limiting metallurgy stack for enhanced reliability of packaged structures and method of making same
    Publication number: 20040159944
    Abstract: The invention relates to a ball-limiting metallurgy stack for an electrical device that contains at least one copper layer disposed upon a Ti adhesion metal layer. The ball-limiting metallurgy stack resists Sn migration toward the upper metallization of the device.
    Type: Application
    Filed: February 10, 2004
    Publication date: August 19, 2004
    Inventors: Madhav Datta, Dave Emory, Subhash M. Joshi, Susanne Menezes, Doowon Suh
  • Thermo-mechanically robust C4 ball-limiting metallurgy to prevent failure due to die-package interaction and method of making same
    Patent number: 6740427
    Abstract: The invention relates to a ball limiting metallurgy stack for an electrical device that contains a tin diffusion barrier and thermo-mechanical buffer layer disposed upon a refractory metal first layer. The multi-diffusion barrier layer stack resists tin migration toward the upper metallization of the device.
    Type: Grant
    Filed: September 21, 2001
    Date of Patent: May 25, 2004
    Assignee: Intel Corporation
    Inventors: Madhav Datta, Dave Emory, Tzeun-luh Huang, Subhash M. Joshi, Christine A. King, Zhiyong Ma, Thomas Marieb, Michael Mckeag, Doowon Suh, Simon Yang
  • Thermo-mechanically robust C4 ball-limiting metallurgy to prevent failure due to die-package interaction and method of making same
    Publication number: 20030059644
    Abstract: The invention relates to a ball limiting metallurgy stack for an electrical device that contains a tin diffusion barrier and thermo-mechanical buffer layer disposed upon a refractory metal first layer. The multi-diffusion barrier layer stack resists tin migration toward the upper metallization of the device.
    Type: Application
    Filed: September 21, 2001
    Publication date: March 27, 2003
    Applicant: Intel Corporation
    Inventors: Madhav Datta, Dave Emory, Tzeun-luh Huang, Subhash M. Joshi, Christine A. King, Zhiyong Ma, Thomas Marieb, Michael Mckeag, Doowon Suh, Simon Yang
  • Dual-stack, ball-limiting metallurgy and method of making same
    Publication number: 20030060041
    Abstract: The invention relates to a ball-limiting metallurgy (BLM) stack for an electrical device. The dual BLM stack resists tin migration toward the upper metallization of the device.
    Type: Application
    Filed: September 21, 2001
    Publication date: March 27, 2003
    Applicant: Intel Corporation
    Inventors: Madhav Datta, Dave Emory, Subhash M. Joshi, Susanne Menezes, Doowon Suh
  • Copper-containing C4 ball-limiting metallurgy stack for enhanced reliability of packaged structures and method of making same
    Publication number: 20030057551
    Abstract: The invention relates to a ball-limiting metallurgy stack for an electrical device that contains at least one copper layer disposed upon a Ti adhesion metal layer. The ball-limiting metallurgy stack resists Sn migration toward the upper metallization of the device.
    Type: Application
    Filed: September 21, 2001
    Publication date: March 27, 2003
    Applicant: Intel Corporation
    Inventors: Madhav Datta, Dave Emory, Subhash M. Joshi, Susanne Menezes, Doowon Suh