Abstract: A method and apparatus for finding internal charge flow distribution in a dual-channel field effect semiconductor device having at least two source terminals, two drain terminals, a control gate and two isolation gates. Electrical energy of different frequencies is applied to different ones of the source terminals for causing currents to flow in each of the channels between the source and drain terminals. Using the isolation gates to achieve channel pinch off, one of the drain terminals and one of the source terminals are selectively coupled to only one of the channels. A control signal is applied to the control gate for controlling the amount of the electrical energy conducting in each of the channels. Data is collected by measuring currents at the different frequencies at each of the drain terminals while a magnetic field perpendicular to the plane of the channels is varied.

Abstract: The present invention (or multi-terminal lateral hot-electron transistor, ET) is based on a high electron mobility (hot-electron) transistor with a split-gate arrangement similar to those used in quantum wave guide devices. In the present invention, the depletion below the split gate is used to form, and control, potential barriers between the source and drain contacts. The devices, according to the present invention, exhibit pronounced SNDC which is controlled by the gate bias.

Abstract: An IR photodetector including an IR semiconductor detector with conductive layers on opposite, parallel surfaces. A semiconductor substrate supports the semiconductor IR detector. A circuit is connected across the semiconductor IR detector to provide a bias voltage and for measuring current flow through the semiconductor IR detector. The semiconductor IR detector has a lattice structure made up of a series of potential wells separated by relatively wide potential barriers such that each well has two confined energy levels. A thin spike barrier is placed in the center of alternate potential wells to tailor the absorption characteristics of the semiconductor IR detector. Multicolor operation is achieved by selecting the appropriate well widths for a first group of potential wells and by placing thin spike barriers in a second group of potential wells that are alternately placed between the wells of the first group.