Abstract: An optoelectronic component for integration into an optoelectronic circuit includes a III-V semiconductor membrane, a P-doped layer, an intrinsic layer deposited on the P layer, and an N-doped layer, deposited on the intrinsic layer; an asymmetrical photonic crystal waveguide, formed in the membrane by a two-dimensional photonic crystal on one longitudinal side and by a face with total internal reflection on the other longitudinal side; contacts arranged on either side of the PhC waveguide, for injecting electrical charge carriers into the PhC waveguide laterally with respect to the membrane; the layers arranged such that the intrinsic and N layers only partially cover the P layer, forming a side face extending perpendicularly from the surface of the P layer, a portion of the side face forming the face with total internal reflection of the PhC waveguide; the PhC waveguide is evanescently coupled to a passive semiconductor waveguide in a coupling region.

Abstract: One of the objectives of this invention is to provide a method for correcting the baseline of a Raman spectrum which takes into account the phenomena at the origin of the baseline that are specific to waveguide-enhanced Raman spectroscopy. The solution of the invention corrects the baseline of a Raman spectrum that is caused by physical elements that constitute the device implementing waveguide-enhanced Raman spectroscopy. Known baseline correction methods can then be used before removing the baseline from the acquired Raman spectrum.

Abstract: An optoelectronic component for integration into an optoelectronic circuit includes a III-V semiconductor membrane, a P-doped layer, an intrinsic layer deposited on the P layer, and an N-doped layer, deposited on the intrinsic layer; an asymmetrical photonic crystal waveguide, formed in the membrane by a two-dimensional photonic crystal on one longitudinal side and by a face with total internal reflection on the other longitudinal side; contacts arranged on either side of the PhC waveguide, for injecting electrical charge carriers into the PhC waveguide laterally with respect to the membrane; the layers arranged such that the intrinsic and N layers only partially cover the P layer, forming a side face extending perpendicularly from the surface of the P layer, a portion of the side face forming the face with total internal reflection of the PhC waveguide; the PhC waveguide is evanescently coupled to a passive semiconductor waveguide in a coupling region.