Patents by Inventor Doris Brostrom

Doris Brostrom has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor component
    Patent number: 4879586
    Abstract: In a semiconductor component, in particular, a high-voltage transistor, with an oxygen doped or nitrogen doped silicon layer on the surface, a glass layer is provided between the doped silicon layer and the semi-conductor surface.
    Type: Grant
    Filed: November 5, 1986
    Date of Patent: November 7, 1989
    Assignee: Telefunken electronic GmbH
    Inventors: Doris Brostrom, Lennart Ryman