Patents by Inventor Doris Mytton

Doris Mytton has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Czochralski growth of randomly oriented polysilicon and use of randomly oriented polysilicon dummy wafers
    Patent number: 8486835
    Abstract: Non-production wafers of polycrystalline silicon are placed in non-production slots of a support tower for thermal processing monocrystalline silicon wafers. They may have thicknesses of 0.725 to 2 mm and be roughened on both sides. Nitride may be grown on the non-production wafers to a thickness of over 2 ?m without flaking. The polycrystalline silicon is preferably randomly oriented Czochralski polysilicon grown using a randomly oriented seed, for example, CVD grown silicon. Both sides are ground to introduce sub-surface damage and then oxidized and etch cleaned. An all-silicon hot zone of a thermal furnace, for example, depositing a nitride layer, may include a silicon support tower placed within a silicon liner and supporting the polysilicon non-production wafers with silicon injector tube providing processing gas within the liner.
    Type: Grant
    Filed: September 18, 2009
    Date of Patent: July 16, 2013
    Inventors: James E. Boyle, Reese Reynolds, Raanan Y. Zehavi, Tom L. Cadwell, Doris Mytton
  • Czochralski Growth of Randomly Oriented Polysilicon and Use of Randomly Oriented Polysilicon Dummy Wafers
    Publication number: 20100009123
    Abstract: Non-production wafers of polycrystalline silicon are placed in non-production slots of a support tower for thermal processing monocrystalline silicon wafers. They may have thicknesses of 0.725 to 2 mm and be roughened on both sides. Nitride may be grown on the non-production wafers to a thickness of over 2 ?m without flaking. The polycrystalline silicon is preferably randomly oriented Czochralski polysilicon grown using a randomly oriented seed, for example, CVD grown silicon. Both sides are ground to introduce sub-surface damage and then oxidized and etch cleaned. An all-silicon hot zone of a thermal furnace, for example, depositing a nitride layer, may include a silicon support tower placed within a silicon liner and supporting the polysilicon non-production wafers with silicon injector tube providing processing gas within the liner.
    Type: Application
    Filed: September 18, 2009
    Publication date: January 14, 2010
    Applicant: INTEGRATED MATERIALS, INC.
    Inventors: James E. Boyle, Reese Reynolds, Raanan Y. Zehavi, Robert W. Mytton, Doris Mytton, Tom L. Cadwell
  • Polysilicon dummy wafers and process used therewith
    Patent number: 7611989
    Abstract: Non-production wafers of polycrystalline silicon are placed in non-production slots of a support tower for thermal processing monocrystalline silicon wafers. They may have thicknesses of 0.725 to 2 mm and be roughened on both sides. Nitride may be grown on the non-production wafers to a thickness of over 2 ?m without flaking. The polycrystalline silicon is preferably randomly oriented Czochralski polysilicon grown using a randomly oriented seed, for example, CVD grown silicon. Both sides are ground to introduce sub-surface damage and then oxidized and etch cleaned. An all-silicon hot zone of a thermal furnace, for example, depositing a nitride layer, may include a silicon support tower placed within a silicon liner and supporting the polysilicon non-production wafers with silicon injector tube providing processing gas within the liner.
    Type: Grant
    Filed: December 18, 2007
    Date of Patent: November 3, 2009
    Assignee: Integrated Materials, Inc.
    Inventors: James E. Boyle, Reese Reynolds, Raanan Y. Zehavi, Robert W. Mytton, Doris Mytton, legal representative, Tom L. Cadwell
  • Polysilicon Dummy Wafers and Process Used Therewith
    Publication number: 20080152805
    Abstract: Non-production wafers of polycrystalline silicon are placed in non-production slots of a support tower for thermal processing monocrystalline silicon wafers. They may have thicknesses of 0.725 to 2 mm and be roughened on both sides. Nitride may be grown on the non-production wafers to a thickness of over 2 ?m without flaking. The polycrystalline silicon is preferably randomly oriented Czochralski polysilicon grown using a randomly oriented seed, for example, CVD grown silicon. Both sides are ground to introduce sub-surface damage and then oxidized and etch cleaned. An all-silicon hot zone of a thermal furnace, for example, depositing a nitride layer, may include a silicon support tower placed within a silicon liner and supporting the polysilicon non-production wafers with silicon injector tube providing processing gas within the liner.
    Type: Application
    Filed: December 18, 2007
    Publication date: June 26, 2008
    Applicant: INTEGRATED MATERIALS, INC.
    Inventors: James E. BOYLE, Reese REYNOLDS, Raanan Y. ZEHAVI, Robert W. MYTTON, Tom L. CADWELL, Doris MYTTON