Patents by Inventor Doris Rahb Ketchow

Doris Rahb Ketchow has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for the production of a germanium doped gas contact layer
    Patent number: 3959036
    Abstract: A heavily germanium doped gallium arsenide layer is epitaxially deposited from solution on a Group III-V compound semiconductor device in order to provide contact between the device and external metallic circuitry. If the net p-type carrier concentration in the layer is greater than 3.5 .times. 10.sup.19 per cubic centimeter, the blocking voltage between the device and common contacting metals, such as chromium and titanium is less than 50 millivolts. Deposition takes place at temperatures from 850.degree.C to 700.degree.C with germanium included in the solution in a concentration from 20 to 50 atom percent.
    Type: Grant
    Filed: August 28, 1974
    Date of Patent: May 25, 1976
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventor: Doris Rahb Ketchow