Patents by Inventor Dorman Pitzer

Dorman Pitzer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Trench-gated MIS devices
    Patent number: 9324858
    Abstract: In a trench-gated MIS device contact is made to the gate within the trench, thereby eliminating the need to have the gate material, typically polysilicon, extend outside of the trench. This avoids the problem of stress at the upper corners of the trench. Contact between the gate metal and the polysilicon is normally made in a gate metal region that is outside the active region of the device. Various configurations for making the contact between the gate metal and the polysilicon are described, including embodiments wherein the trench is widened in the area of contact. Since the polysilicon is etched back below the top surface of the silicon throughout the device, there is normally no need for a polysilicon mask, thereby saving fabrication costs.
    Type: Grant
    Filed: November 1, 2010
    Date of Patent: April 26, 2016
    Assignee: Vishay-Siliconix
    Inventors: Anup Bhalla, Dorman Pitzer, Jacek Korec, Xiaorong Shi, Sik Lui
  • STRUCTURES OF AND METHODS OF FABRICATING TRENCH-GATED MIS DEVICES
    Publication number: 20110042742
    Abstract: In a trench-gated MIS device contact is made to the gate within the trench, thereby eliminating the need to have the gate material, typically polysilicon, extend outside of the trench. This avoids the problem of stress at the upper corners of the trench. Contact between the gate metal and the polysilicon is normally made in a gate metal region that is outside the active region of the device. Various configurations for making the contact between the gate metal and the polysilicon are described, including embodiments wherein the trench is widened in the area of contact. Since the polysilicon is etched back below the top surface of the silicon throughout the device, there is normally no need for a polysilicon mask, thereby saving fabrication costs.
    Type: Application
    Filed: November 1, 2010
    Publication date: February 24, 2011
    Applicant: VISHAY-SILICONIX
    Inventors: Anup Bhalla, Dorman Pitzer, Jacek Korec, Xiaorong Shi, Sik Lui
  • Structures of and methods of fabricating trench-gated MIS devices
    Patent number: 7335946
    Abstract: In a trench-gated MIS device contact is made to the gate within the trench, thereby eliminating the need to have the gate material, typically polysilicon, extend outside of the trench. This avoids the problem of stress at the upper corners of the trench. Contact between the gate metal and the polysilicon is normally made in a gate metal region that is outside the active region of the device. Various configurations for making the contact between the gate metal and the polysilicon are described, including embodiments wherein the trench is widened in the area of contact. Since the polysilicon is etched back below the top surface of the silicon throughout the device, there is normally no need for a polysilicon mask, thereby saving fabrication costs.
    Type: Grant
    Filed: July 22, 2004
    Date of Patent: February 26, 2008
    Assignee: Vishay-Siliconix
    Inventors: Anup Bhalla, Dorman Pitzer, Jacek Korec, Xiaorong Shi, Sik Lui
  • Structures of and methods of fabricating trench-gated MIS devices
    Patent number: 7005347
    Abstract: In a trench-gated MIS device contact is made to the gate within the trench, thereby eliminating the need to have the gate material, typically polysilicon, extend outside of the trench. This avoids the problem of stress at the upper corners of the trench. Contact between the gate metal and the polysilicon is normally made in a gate metal region that is outside the active region of the device. Various configurations for making the contact between the gate metal and the polysilicon are described, including embodiments wherein the trench is widened in the area of contact. Since the polysilicon is etched back below the top surface of the silicon throughout the device, there is normally no need for a polysilicon mask, thereby saving fabrication costs.
    Type: Grant
    Filed: April 27, 2004
    Date of Patent: February 28, 2006
    Assignee: Vishay-Siliconix
    Inventors: Anup Bhalla, Dorman Pitzer, Jacek Korec, Xiaorong Shi, Sik Lui
  • Structures of and methods of fabricating trench-gated MIS devices
    Patent number: 6838722
    Abstract: In a trench-gated MIS device contact is made to the gate within the trench, thereby eliminating the need to have the gate material, typically polysilicon, extend outside of the trench. This avoids the problem of stress at the upper corners of the trench. Contact between the gate metal and the polysilicon is normally made in a gate metal region that is outside the active region of the device. Various configurations for making the contact between the gate metal and the polysilicon are described, including embodiments wherein the trench is widened in the area of contact. Since the polysilicon is etched back below the top surface of the silicon throughout the device, there is normally no need for a polysilicon mask, thereby saving fabrication costs.
    Type: Grant
    Filed: March 22, 2002
    Date of Patent: January 4, 2005
    Assignee: Siliconix Incorporated
    Inventors: Anup Bhalla, Dorman Pitzer, Jacek Korec, Xiaorong Shi, Sik Lui
  • Structures of and methods of fabricating trench-gated MIS devices
    Publication number: 20040113201
    Abstract: In a trench-gated MIS device contact is made to the gate within the trench, thereby eliminating the need to have the gate material, typically polysilicon, extend outside of the trench. This avoids the problem of stress at the upper corners of the trench. Contact between the gate metal and the polysilicon is normally made in a gate metal region that is outside the active region of the device. Various configurations for making the contact between the gate metal and the polysilicon are described, including embodiments wherein the trench is widened in the area of contact. Since the polysilicon is etched back below the top surface of the silicon throughout the device, there is normally no need for a polysilicon mask, thereby saving fabrication costs.
    Type: Application
    Filed: September 22, 2003
    Publication date: June 17, 2004
    Applicant: Siliconix Incorporated
    Inventors: Anup Bhalla, Dorman Pitzer, Jacek Korec, Xiaorong Shi, Sik Lui
  • Structures of and methods of fabricating trench-gated MIS devices
    Publication number: 20030178673
    Abstract: In a trench-gated MIS device contact is made to the gate within the trench, thereby eliminating the need to have the gate material, typically polysilicon, extend outside of the trench. This avoids the problem of stress at the upper corners of the trench. Contact between the gate metal and the polysilicon is normally made in a gate metal region that is outside the active region of the device. Various configurations for making the contact between the gate metal and the polysilicon are described, including embodiments wherein the trench is widened in the area of contact. Since the polysilicon is etched back below the top surface of the silicon throughout the device, there is normally no need for a polysilicon mask, thereby saving fabrication costs.
    Type: Application
    Filed: March 22, 2002
    Publication date: September 25, 2003
    Inventors: Anup Bhalla, Dorman Pitzer, Jacek Korec, Xiaorong Shi, Sik Lui