Patents by Inventor Doron Cohen-Elias

Doron Cohen-Elias has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High-voltage fast-avalanche diode
    Patent number: 12068419
    Abstract: A method of using a diode device including providing a diode that includes an active region including a 525 micron thick. 10 k?-cm, n-type, float zone wafer, and operating the diode as a silicon-avalanche semiconductor switch.
    Type: Grant
    Filed: October 21, 2020
    Date of Patent: August 20, 2024
    Assignee: Soreq Nuclear Research Center
    Inventors: Amit Kesar, Gil Atar, Shoval Zoran, Doron Cohen-Elias
  • HIGH-VOLTAGE FAST-AVALANCHE DIODE
    Publication number: 20230040734
    Abstract: A high-voltage fast-avalanche diode, being a silicon-avalanche shaper or sharpener (SAS), has a thick active region above 300 microns in thickness.
    Type: Application
    Filed: October 21, 2020
    Publication date: February 9, 2023
    Applicant: Soreq Nuclear Research Center
    Inventors: Amit Kesar, Gil Atar, Shoval Zoran, Doron Cohen-Elias