Abstract: A sample inspection system is described. The system comprises at least first and second inspection units positioned above a sample region. Each of said at least first and second inspection unit comprises at least one X-ray radiation source and respective detector arrangement and configured for X-ray fluorescent inspection of a sample. Wherein the first and second x-ray inspection units provide first and second inspection properties different in at least one of: bandwidth of emitted X-ray energies, energy of emitted X-rays, spot size of X-ray beam generated on a sample.

Abstract: The present disclosure provides a method and an apparatus for apparatus for inspecting a semiconductor wafer for abnormalities by accurately measuring elemental concentration at a target area. The apparatus includes an x-ray imaging subsystem for measuring an elemental composition at the target area of the semiconductor wafer. The apparatus further includes an edxrf subsystem for measuring an elemental concentration at the target area of the semiconductor wafer. The elemental concentration may be calibrated by first correlating the elemental concentration measurements obtained using x-ray imaging system for the target area with the elemental concentration measurements obtained using the edxrf subsystem for the target area to receive an augmented and accurate elemental concentration measurement for the target area of the semiconductor wafer.

Abstract: The present disclosure provides a method and an apparatus for apparatus for accurately measuring and calibrating elemental concentration measurements for a semiconductor wafer. The apparatus includes an edxrf system for calculating an elemental concentration at a target area of the semiconductor wafer. The apparatus further includes an optical subsystem for calculating volumetric information of the target area of the semiconductor wafer. The elemental concentration may be calibrated by first correlating the elemental concentration measurements for a norm feature at the target area with the volumetric information for the norm feature of the target area to obtain a calibration data. Thereafter, the calibration data obtained is used to calibrate the elemental concentration measurements to achieve an accurate measurement thereof.

Abstract: The present disclosure provides a method and an apparatus for apparatus for inspecting a semiconductor wafer for abnormalities by accurately measuring elemental concentration at a target area. The apparatus includes an x-ray imaging subsystem for measuring an elemental composition at the target area of the semiconductor wafer. The apparatus further includes an edxrf subsystem for measuring an elemental concentration at the target area of the semiconductor wafer. The elemental concentration may be calibrated by first correlating the elemental concentration measurements obtained using x-ray imaging system for the target area with the elemental concentration measurements obtained using the edxrf subsystem for the target area to receive an augmented and accurate elemental concentration measurement for the target area of the semiconductor wafer.

Abstract: The present disclosure provides a method and an apparatus for apparatus for accurately measuring and calibrating elemental concentration measurements for a semiconductor wafer. The apparatus includes an edxrf system for calculating an elemental concentration at a target area of the semiconductor wafer. The apparatus further includes an optical subsystem for calculating volumetric information of the target area of the semiconductor wafer. The elemental concentration may be calibrated by first correlating the elemental concentration measurements for a norm feature at the target area with the volumetric information for the norm feature of the target area to obtain a calibration data. Thereafter, the calibration data obtained is used to calibrate the elemental concentration measurements to achieve an accurate measurement thereof.

Abstract: A method and a system for bump's inspection are disclosed. The inspection done by comparing the volume of the bump's outside contour and the volume the solid materials from which the bump is made and/or analyzing the bump's solid materials ratio. Principally, the inspection id done by preparing an empiric reference table of the emitted energy received from the solid materials, from which a reference proper bump with a given volume is comprised, using ED-XRF (Energy-Dispersive-X-ray-Fluorescence analysis) analyze; obtaining a first calculated volume of the bump, using a 3D image-processing method; adapting the reference table according to the difference between the given volume and the first calculated volume of the bump; performing a second volume calculation of the bump by applying ED-XRF technology. The difference between the first and second volume calculations and the solid material combination are used to inspect the bump.

Abstract: A method and a system for bump's inspection are disclosed. The inspection done by comparing the volume of the bump's outside contour and the volume the solid materials from which the bump is made and/or analyzing the bump's solid materials ratio. Principally, the inspection id done by preparing an empiric reference table of the emitted energy received from the solid materials, from which a reference proper bump with a given volume is comprised, using ED-XRF (Energy-Dispersive-X-ray-Fluorescence analysis) analyze; obtaining a first calculated volume of the bump, using a 3D image-processing method; adapting the reference table according to the difference between the given volume and the first calculated volume of the bump; performing a second volume calculation of the bump by applying ED-XRF technology. The difference between the first and second volume calculations and the solid material combination are used to inspect the bump.