Abstract: A durable bond pad structure is described that facilitates highly durable electrical connections to semiconductor microelectronics chips (e.g., silicon carbide (SiC) chips) to enable prolonged operation over very extreme temperature ranges.

Abstract: A miniaturized Schottky diode hydrogen and hydrocarbon sensor and the method of making same is disclosed and claimed. The sensor comprises a catalytic metal layer, such as palladium, a silicon carbide substrate layer and a thin barrier layer in between the catalytic and substrate layers made of palladium oxide (PdOx ). This highly stable device provides sensitive gas detection at temperatures ranging from at least 450 to 600° C. The barrier layer prevents reactions between the catalytic metal layer and the substrate layer. Conventional semiconductor fabrication techniques are used to fabricate the small-sized sensors. The use of a thicker palladium oxide barrier layer for other semiconductor structures such as a capacitor and transistor structures is also disclosed.

Abstract: A miniaturized Schottky diode hydrogen and hydrocarbon sensor and the method of making same is disclosed and claimed. The sensor comprises a catalytic metal layer, such as palladium, a silicon carbide substrate layer and a thin barrier layer in between the catalytic and substrate layers made of palladium oxide (PdOx). This highly stable device provides sensitive gas detection at temperatures ranging from at least 450 to 600° C. The barrier layer prevents reactions between the catalytic metal layer and the substrate layer. Conventional semiconductor fabrication techniques are used to fabricate the small-sized sensors. The use of a thicker palladium oxide barrier layer for other semiconductor structures such as a capacitor and transistor structures is also disclosed.

Abstract: A miniaturized Schottky diode hydrogen and hydrocarbon sensor and the method of making same is disclosed and claimed. The sensor comprises a catalytic metal layer, such as palladium, a silicon carbide substrate layer and a thin barrier layer in between the catalytic and substrate layers made of palladium oxide (PdOx). This highly stable device provides sensitive gas detection at temperatures ranging from at least 450 to 600° C. The barrier layer prevents reactions between the catalytic metal layer and the substrate layer. Conventional semiconductor fabrication techniques are used to fabricate the small-sized sensors. The use of a thicker palladium oxide barrier layer for other semiconductor structures such as a capacitor and transistor structures is also disclosed.

Abstract: Coated reinforcement material for metal matrix composites comprising a carbon or silicon-containing reinforcement having a coating of the general formula:A.sub.100-x M.sub.xwherein A is at least one of Y, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; M is at least one of Mo, W or Re; and x is from about 10 to about 90.

Abstract: Surface oxides, such as copper, zinc and aluminum oxides, are effectively removed from copper-base alloys by a process comprising:(a) contacting the alloy surface with an aqueous solution containing potassium ions, e.g. a solution prepared by dissolving potassium hydroxide in water; and(b) subsequently contacting the alloy surface with an aqueous solution comprising an acid, a peroxide, and a metal oxide, e.g. a solution of sulfuric acid, hydrogen peroxide and molybdic acid, the solution having:(i) an acid equivalent of a sulfuric acid solution of about 4 to 30 percent by volume;(ii) a peroxide concentration of about 1 to 30 percent by volume; and(iii) a metal oxide concentration of about 0.1 to 5 percent by volume.