Abstract: A process for manufacturing indium tin oxide (ITO) sputtering targets as described. The process includes the precipitation of indium and tin hydroxides, sintering in the absence of chloride ions, using the resultant oxide powders to prepare an aqueous slip with dispersing agent, binder, special high density promoting agents and compacting the slip in a specially surface coated porous mold using the method of slip casting followed by sintering the resultant compacted target body to yield high density ITO target.

Abstract: A process for manufacturing indium tin oxide (ITO) sputtering targets as described. The process includes the precipitation of indium and tin hydroxides, sintering in the absence of chloride ions, using the resultant oxide powders to prepare an aqueous slip with dispersing agent, binder, special high density promoting agents and compacting the slip in a specially surface coated porous mold using the method of slip casting followed by sintering the resultant compacted target body to yield high density ITO target.

Abstract: A soldering flux composition includes an aqueous solution containing as component (A) a compound selected from (i) hydrohalides and hydrophosphates of guanidine and substituted guanidines, (ii) hydrohalides and hydrophosphates of a five-membered nitrogen containing heterocyclic amine of the formulaC.sub.x N.sub.y H.sub.3in which x is 1 or 2 and y is 4 or 5, and mixtures of (i) and (ii) and as component (B) at least one compound selected from hydrohalides and hydrophosphates of aliphatic amines selected from aliphatic monoamines of formula CH.sub.3 (CH.sub.2).sub.n NR.sub.2 and aliphatic diamines of formula R.sub.2 N(CH.sub.2).sub.m NR.sub.2 in which n is 0 to 10, m is 5 to 10 and R is hydrogen, methyl, ethyl, propyl or butyl, the components (A) and (B) being present in the relative proportions of 25 to 100% by weight of (A) and 75 to 0% of (B).