Abstract: A method for operating a memory (28) that includes a plurality of analog memory cells (32) includes storing data in the memory by writing first storage values to the cells. Second storage values are read from the cells, and a Cumulative Distribution Function (CDF) of the second storage values is estimated. The estimated CDF is processed so as to compute one or more thresholds. A memory access operation is performed on the cells using the one or more thresholds.

Abstract: A method for data storage includes accepting data for storage in a memory that includes multiple analog memory cells and supports a set of built-in programming commands. Each of the programming commands programs a respective page, selected from a group of N pages, in a subset of the memory cells. The subset of the memory cells is programmed to store M pages of the data, M>N, by performing a sequence of the programming commands drawn only from the set.

Abstract: A method for data storage includes initially storing a sequence of data pages in a memory that includes multiple memory arrays, such that successive data pages in the sequence are stored in alternation in a first number of the memory arrays. The initially-stored data pages are rearranged in the memory so as to store the successive data pages in the sequence in a second number of the memory arrays, which is less than the first number. The rearranged data pages are read from the second number of the memory arrays.

Abstract: A method for data storage includes performing an erasure operation on a group of analog memory cells (32). One or more of the memory cells in the group, which failed the erasure operation, are identified as erase-failed cells. A storage configuration that is used for programming the analog memory cells in the group is modified responsively to the identified erase-failed cells. Data is stored in the group of the analog memory cells using the modified storage configuration.

Abstract: A method for data storage includes initially storing a sequence of data pages in a memory that includes multiple memory arrays, such that successive data pages in the sequence are stored in alternation in a first number of the memory arrays. The initially-stored data pages are rearranged in the memory so as to store the successive data pages in the sequence in a second number of the memory arrays, which is less than the first number. The rearranged data pages are read from the second number of the memory arrays.

Abstract: A method for operating a memory (36) includes storing data in a plurality of analog memory cells (40) that are fabricated on a first semiconductor die by writing input storage values to a group of the analog memory cells. After storing the data, multiple output storage values are read from each of the analog memory cells in the group using respective, different threshold sets of read thresholds, thus providing multiple output sets of the output storage values corresponding respectively to the threshold sets. The multiple output sets of the output storage values are preprocessed by circuitry (48) that is fabricated on the first semiconductor die, to produce preprocessed data. The preprocessed data is provided to a memory controller (28), which is fabricated on a second semiconductor die that is different from the first semiconductor die, so as to enable the memory controller to reconstruct the data responsively to the preprocessed data.

Abstract: A method for data readout includes sending to a memory device, which includes a plurality of analog memory cells, a request to read a requested memory page that is stored in a first group of the memory cells. A programming status of a second group of the memory cells is reported to the memory device, so as to cause the memory device to select a reading configuration responsively to the reported programming status and to read the requested memory page from the first group of the memory cells using the selected reading configuration. The requested memory page is received from the memory device.

Abstract: A method for data storage in a memory that includes multiple analog memory cells fabricated using respective physical media, includes identifying a group of the memory cells whose physical media have deteriorated over time below a given storage quality level. A rejuvenation process, which causes the physical media of the memory cells in the group to meet the given storage quality level, is applied to the identified group. Data is stored in the rejuvenated group of the memory cells.

Abstract: A method for operating a memory (28) that includes a plurality of analog memory cells (32) includes storing data in the memory by writing first storage values to the cells. Second storage values are read from the cells, and a Cumulative Distribution Function (CDF) of the second storage values is estimated. The estimated CDF is processed so as to compute one or more thresholds. A memory access operation is performed on the cells using the one or more thresholds.

Abstract: A method for data storage in a memory that includes a plurality of analog memory cells includes estimating respective achievable storage capacities of the analog memory cells. The memory cells are assigned respective storage configurations defining quantities of data to be stored in the memory cells based on the estimated achievable capacities. The data is stored in the memory cells in accordance with the respective assigned storage configurations. The achievable storage capacities of the analog memory cells are re-estimated after the memory has been installed in a host system and used for storing the data in the host system. The storage configurations are modified responsively to the re-estimated achievable capacities.

Abstract: A method for data storage includes storing first data bits in a set of multi-bit analog memory cells at a first time by programming the memory cells to assume respective first programming levels. Second data bits are stored in the set of memory cells at a second time that is later than the first time by programming the memory cells to assume respective second programming levels that depend on the first programming levels and on the second data bits. A storage strategy is selected responsively to a difference between the first and second times. The storage strategy is applied to at least one group of the data bits, selected from among the first data bits and the second data bits.

Abstract: A method for data storage in a memory that includes multiple analog memory cells fabricated using respective physical media, includes identifying a group of the memory cells whose physical media have deteriorated over time below a given storage quality level. A rejuvenation process, which causes the physical media of the memory cells in the group to meet the given storage quality level, is applied to the identified group. Data is stored in the rejuvenated group of the memory cells.

Abstract: A method for data storage includes defining a first programming scheme that programs a group of analog memory cells while reducing interference caused by at least one memory cell that neighbors the group, and a second programming scheme that programs the group of the analog memory cells and does not reduce all of the interference reduced by the first programming scheme. One of the first and second programming schemes is selected based on a criterion defined with respect to the analog memory cells. Data is stored in the group of the analog memory cells using the selected programming scheme.

Abstract: A method for data storage includes defining a first programming scheme that programs a group of analog memory cells while reducing interference caused by at least one memory cell that neighbors the group, and a second programming scheme that programs the group of the analog memory cells and does not reduce all of the interference reduced by the first programming scheme. One of the first and second programming schemes is selected based on a criterion defined with respect to the analog memory cells. Data is stored in the group of the analog memory cells using the selected programming scheme.

Abstract: A method for data storage includes storing first data bits in a set of multi-bit analog memory cells at a first time by programming the memory cells to assume respective first programming levels. Second data bits are stored in the set of memory cells at a second time that is later than the first time by programming the memory cells to assume respective second programming levels that depend on the first programming levels and on the second data bits. A storage strategy is selected responsively to a difference between the first and second times. The storage strategy is applied to at least one group of the data bits, selected from among the first data bits and the second data bits.

Abstract: A method for data storage in a memory that includes multiple analog memory cells fabricated using respective physical media, includes identifying a group of the memory cells whose physical media have deteriorated over time below a given storage quality level. A rejuvenation process, which causes the physical media of the memory cells in the group to meet the given storage quality level, is applied to the identified group. Data is stored in the rejuvenated group of the memory cells.

Abstract: A method for data storage includes accepting data for storage in a memory that includes multiple analog memory cells and supports a set of built-in programming commands. Each of the programming commands programs a respective page, selected from a group of N pages, in a subset of the memory cells. The subset of the memory cells is programmed to store M pages of the data, M>N, by performing a sequence of the programming commands drawn only from the set.

Abstract: A method for data storage in a memory (28) that includes a plurality of analog memory cells (32) includes estimating respective achievable storage capacities of the analog memory cells. The memory cells are assigned respective storage configurations defining quantities of data to be stored in the memory cells based on the estimated achievable capacities. The data is stored in the memory cells in accordance with the respective assigned storage configurations. The achievable storage capacities of the analog memory cells are re-estimated after the memory has been installed in a host system and used for storing the data in the host system. The storage configurations are modified responsively to the re-estimated achievable capacities.

Abstract: A method for operating a memory includes encoding input data with an Error Correction Code (ECC) to produce input encoded data including first and second sections, such that the ECC is decodable based on the first section at a first redundancy, and based on both the first and the second sections at a second redundancy that is higher than the first redundancy. Output encoded data is read and a condition is evaluated. The input data is reconstructed using a decoding level selected, responsively to the condition, from a first level, at which a first part of the output encoded data corresponding to the first section is processed to decode the ECC at the first redundancy, and a second level, at which the first part and a second part of the output encoded data corresponding to the second section are processed jointly to decode the ECC at the second redundancy.

Abstract: A method for data storage includes storing data in a group of analog memory cells by writing respective input storage values to the memory cells in the group. After storing the data, respective output storage values are read from the analog memory cells in the group. Respective confidence levels of the output storage values are estimated, and the confidence levels are compressed. The output storage values and the compressed confidence levels are transferred from the memory cells over an interface to a memory controller.