Abstract: Liquid crystal display (LCD) structures and methods for forming the same. The black matrix and the color filter layer of the LCD are moved from color filter substrate to TFT substrate to form a color filter on TFT (COT) structure. Besides, the spacers are composed of photoresist or color photoresist can be located on portions of areas covered by the black matrix to maximize the aperture ratio.

Abstract: Liquid crystal display (LCD) structures and methods for forming the same. The black matrix and the color filter layer of the LCD are moved from color filter substrate to TFT substrate to form a color filter on TFT (COT) structure. Besides, the spacers are composed of photoresist or color photoresist can be located on portions of areas covered by the black matrix to maximize the aperture ratio.

Abstract: Liquid crystal display (LCD) structures and methods for forming the same. The black matrix and the color filter layer of the LCD are moved from color filter substrate to TFT substrate to form a color filter on TFT (COT) structure. Besides, the spacers are composed of photoresist or color photoresist can be located on portions of areas covered by the black matrix to maximize the aperture ratio.

Abstract: A structure of an amorphous-silicon thin film transistor array comprises a substrate, a gate electrode, a gate insulating layer, an amorphous-silicon active layer, an n+ amorphous-silicon layer and a metal layer. The metal layer defines a source electrode and a drain electrode. The structure simplifies the photolithography process by using a less number of masks to manufacture thin film transistors. It also reduces the occurrence of open circuits in the first metal (MI) layer or short circuits between the MI layer and the second metal (MII) layer caused by the photoresist residue or particle contamination. The manufacturing method combines a conventional back-channel-etched (BCE) reduced mask process and a two-step exposure technology. The two-step exposure technology uses two photoresist pattern masks. One is a pattern mask for complete exposure with higher light intensity and the other is a pattern mask for incomplete exposure with lower light intensity.

Abstract: Within a method for forming a thin film transistor (TFT) structure, there is first provided a substrate. There is then formed over the substrate a gate electrode. There is then formed adjacent to the gate electrode but not covering a top surface of the gate electrode a backfilling dielectric layer. There is then formed over and covering the top surface of the gate electrode a gate dielectric layer. There is then formed over and covering the gate dielectric layer an active semiconductor layer. Finally, there is then formed over and in electrical communication with the active semiconductor layer a pair of source/drain electrodes, where the pair of source/drain electrodes having a separation distance which defines a channel region of the active semiconductor layer. The method for forming the thin film transistor (TFT) structure contemplates a thin film transistor (TFT) structure fabricated in accord with the method for forming the thin film transistor (TFT) structure.