Patents by Inventor Doufeng Yue

Doufeng Yue has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Metal-germanium physical vapor deposition for semiconductor device defect reduction
    Patent number: 7803703
    Abstract: The present invention provides a method of manufacturing a metal silicide electrode (100) for a semiconductor device (110). The method comprises depositing by physical vapor deposition, germanium atoms (120) and transition metal atoms (130) to form a metal-germanium alloy layer (140) on a semiconductor substrate (150). The metal-germanium alloy layer and the semiconductor substrate are reacted to form a metal silicide electrode. Other aspects of the present invention include a method of manufacturing an integrated circuit (400).
    Type: Grant
    Filed: August 4, 2008
    Date of Patent: September 28, 2010
    Assignee: Texas Instruments Incorporated
    Inventors: Doufeng Yue, Noel Russell, Peijun J. Chen, Douglas E. Mercer
  • METAL-GERMANIUM PHYSICAL VAPOR DEPOSITION FOR SEMICONDUCTOR DEVICE DEFECT REDUCTION
    Publication number: 20080311747
    Abstract: The present invention provides a method of manufacturing a metal silicide electrode (100) for a semiconductor device (110). The method comprises depositing by physical vapor deposition, germanium atoms (120) and transition metal atoms (130) to form a metal-germanium alloy layer (140) on a semiconductor substrate (150). The metal-germanium alloy layer and the semiconductor substrate are reacted to form a metal silicide electrode. Other aspects of the present invention include a method of manufacturing an integrated circuit (400).
    Type: Application
    Filed: August 4, 2008
    Publication date: December 18, 2008
    Applicant: Texas Instruments Incorporated
    Inventors: Doufeng Yue, Noel Russell, Peijun J. Chen, Douglas E. Mercer
  • Metal-germanium physical vapor deposition for semiconductor device defect reduction
    Patent number: 7435672
    Abstract: The present invention provides a method of manufacturing a metal silicide electrode (100) for a semiconductor device (110). The method comprises depositing by physical vapor deposition, germanium atoms (120) and transition metal atoms (130) to form a metal-germanium alloy layer (140) on a semiconductor substrate (150). The metal-germanium alloy layer and the semiconductor substrate are reacted to form a metal silicide electrode. Other aspects of the present invention include a method of manufacturing an integrated circuit (400).
    Type: Grant
    Filed: July 30, 2004
    Date of Patent: October 14, 2008
    Assignee: Texas Instruments Incorporated
    Inventors: Doufeng Yue, Noel Russell, Peijun J. Chen, Douglas E. Mercer
  • Metal-germanium physical vapor deposition for semiconductor device defect reduction
    Publication number: 20060024963
    Abstract: The present invention provides a method of manufacturing a metal silicide electrode (100) for a semiconductor device (110). The method comprises depositing by physical vapor deposition, germanium atoms (120) and transition metal atoms (130) to form a metal-germanium alloy layer (140) on a semiconductor substrate (150). The metal-germanium alloy layer and the semiconductor substrate are reacted to form a metal silicide electrode. Other aspects of the present invention include a method of manufacturing an integrated circuit (400).
    Type: Application
    Filed: July 30, 2004
    Publication date: February 2, 2006
    Applicant: Texas Instruments Incorporated
    Inventors: Doufeng Yue, Noel Russell, Peijun Chen, Douglas Mercer