Patents by Inventor Doug Crafts

Doug Crafts has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • POROUS SILICON ELECTRO-ETCHING SYSTEM AND METHOD
    Publication number: 20150299892
    Abstract: It is an object of this disclosure to provide high productivity, low cost-of-ownership manufacturing equipment for the high volume production of photovoltaic (PV) solar cell device architecture. It is a further object of this disclosure to reduce material processing steps and material cost compared to existing technologies by using gas-phase source silicon. The present disclosure teaches the fabrication of a sacrificial substrate base layer that is compatible with a gas-phase substrate growth process. Porous silicon is used as the sacrificial layer in the present disclosure. Further, the present disclosure provides equipment to produce a sacrificial porous silicon PV cell-substrate base layer.
    Type: Application
    Filed: January 5, 2015
    Publication date: October 22, 2015
    Inventors: Mehrdad M. Moslehi, Doug Crafts, Subramanian Tamilmani, Karl-Josef Kramer, George D. Kamian, Somnath Nag
  • Porous silicon electro-etching system and method
    Patent number: 8926803
    Abstract: It is an object of this disclosure to provide high productivity, low cost-of-ownership manufacturing equipment for the high volume production of photovoltaic (PV) solar cell device architecture. It is a further object of this disclosure to reduce material processing steps and material cost compared to existing technologies by using gas-phase source silicon. The present disclosure teaches the fabrication of a sacrificial substrate base layer that is compatible with a gas-phase substrate growth process. Porous silicon is used as the sacrificial layer in the present disclosure. Further, the present disclosure provides equipment to produce a sacrificial porous silicon PV cell-substrate base layer.
    Type: Grant
    Filed: January 15, 2010
    Date of Patent: January 6, 2015
    Assignee: Solexel, Inc.
    Inventors: Doug Crafts, Mehrdad Moslehi, Subramanian Tamilmani, Joe Kramer, George D. Kamian, Somnath Nag
  • POROUS SILICON ELECTRO-ETCHING SYSTEM AND METHOD
    Publication number: 20110120882
    Abstract: It is an object of this disclosure to provide high productivity, low cost-of-ownership manufacturing equipment for the high volume production of photovoltaic (PV) solar cell device architecture. It is a further object of this disclosure to reduce material processing steps and material cost compared to existing technologies by using gas-phase source silicon. The present disclosure teaches the fabrication of a sacrificial substrate base layer that is compatible with a gas-phase substrate growth process. Porous silicon is used as the sacrificial layer in the present disclosure. Further, the present disclosure provides equipment to produce a sacrificial porous silicon PV cell-substrate base layer.
    Type: Application
    Filed: January 15, 2010
    Publication date: May 26, 2011
    Applicant: SOLEXEL, INC.
    Inventors: Doug Crafts, Mehrdad Moslehi, Subramanian Tamilmani, Joe Kramer, George D. Kamian, Somnath Nag