Abstract: A semiconductor device and related method of fabricating it are provided. An exemplary fabrication process begins by forming a gate structure overlying a layer of semiconductor material, the gate structure comprising a gate insulator overlying the layer of semiconductor material and comprising a temporary gate element overlying the gate insulator. The process continues by forming a layer of compressive material overlying the gate structure, and by removing a first portion of the compressive material to expose an upper surface of the temporary gate element, while leaving a second portion of the compressive material intact and external to sidewalls of the temporary gate element. Thereafter, at least a portion of the temporary gate element is removed, while leaving the second portion of the compressive material intact, resulting in a gate recess. The process continues by at least partially filling the gate recess with a gate electrode material.

Abstract: Small feature patterning is accomplished using a multilayer hard mask (HM). Embodiments include sequentially forming a first HM layer and a multilayer HM layer over a substrate, the multilayer HM layer comprising sublayers, etching the multilayer HM layer to form a first opening having an upper first opening with sides converging to a lower second opening and a second opening with substantially parallel sides and an opening substantially corresponding to the lower second opening of the first opening, etching through the second opening to form a corresponding opening in the first HM layer, and etching the substrate through the corresponding opening in the first HM layer.

Abstract: Small feature patterning is accomplished using a multilayer hard mask (HM). Embodiments include sequentially forming a first HM layer and a multilayer HM layer over a substrate, the multilayer HM layer comprising sublayers, etching the multilayer HM layer to form a first opening having an upper first opening with sides converging to a lower second opening and a second opening with substantially parallel sides and an opening substantially corresponding to the lower second opening of the first opening, etching through the second opening to form a corresponding opening in the first HM layer, and etching the substrate through the corresponding opening in the first HM layer.

Abstract: A semiconductor device and related method of fabricating it are provided. An exemplary fabrication process begins by forming a gate structure overlying a layer of semiconductor material, the gate structure comprising a gate insulator overlying the layer of semiconductor material and comprising a temporary gate element overlying the gate insulator. The process continues by forming a layer of compressive material overlying the gate structure, and by removing a first portion of the compressive material to expose an upper surface of the temporary gate element, while leaving a second portion of the compressive material intact and external to sidewalls of the temporary gate element. Thereafter, at least a portion of the temporary gate element is removed, while leaving the second portion of the compressive material intact, resulting in a gate recess. The process continues by at least partially filling the gate recess with a gate electrode material.

Abstract: Methods for fabricating devices having small feature sizes are provided. In an exemplary embodiment, a method comprises forming a patterned first mask layer overlying a subject material layer and isotropically etching the patterned first mask layer. A second masking layer is deposited overlying the patterned first mask layer and the isotropically-etched patterned first mask layer is exposed. The isotropically-etched patterned first mask layer is removed and the subject material layer is etched to form a feature therein.

Abstract: Methods for fabricating devices having small feature sizes are provided. In an exemplary embodiment, a method comprises forming a patterned first mask layer overlying a subject material layer and isotropically etching the patterned first mask layer. A second masking layer is deposited overlying the patterned first mask layer and the isotropically-etched patterned first mask layer is exposed. The isotropically-etched patterned first mask layer is removed and the subject material layer is etched to form a feature therein.

Abstract: Methods for fabricating devices having small feature sizes are provided. In an exemplary embodiment, a method comprises forming a patterned first mask layer overlying a subject material layer and isotropically etching the patterned first mask layer. A second masking layer is deposited overlying the patterned first mask layer and the isotropically-etched patterned first mask layer is exposed. The isotropically-etched patterned first mask layer is removed and the subject material layer is etched to form a feature therein.