Abstract: A selective etch process for step and flash imprint lithography includes providing (30) a substrate (10); forming (32) a transfer layer (12) on the substrate; forming (34) an etch barrier layer (14) on the transfer layer; patterning (36) the etch barrier layer with a template (16) while curing with ultraviolet light through the template, resulting in a patterned etch barrier layer and a residual layer (20) on the transfer layer; performing (38) an etch to substantially remove the residual layer; and performing (40) an etch with a mixture of nitrogen and hydrogen, and more preferably NH3, to substantially remove the portion of the transfer layer not underlying the etch barrier layer.

Abstract: A novel device, such as a semiconductor device, a microfluidic device, a surface acoustic wave device an imprint template, or the like, including an amorphous carbon layer for improved adhesion of organic layers and method of fabrication. The device includes a substrate having a surface, an amorphous carbon layer, formed overlying the surface of the substrate, and a low surface energy material layer overlying the surface of the substrate. The device is formed by providing a substrate having a surface, depositing a low surface energy material layer and an amorphous carbon layer overlying the surface of the substrate adjacent the low surface energy material layer using plasma enhanced chemical vapor deposition (PECVD) or sputtering.