Abstract: A method for decomposing a target circuit pattern containing features to be imaged into multiple patterns. The process includes the steps of separating the features to be printed into a first pattern and a second pattern; performing a first optical proximity correction process on the first pattern and the second pattern; determining an imaging performance of the first pattern and the second pattern; determining a first error between the first pattern and the imaging performance of the first pattern, and a second error between the second pattern and the imaging performance of said second pattern; utilizing the first error to adjust the first pattern to generate a modified first pattern; utilizing the second error to adjust the second pattern to generate a modified second pattern; and applying a second optical proximity correction process to the modified first pattern and the modified second pattern.

Abstract: A method of generating masks for printing a pattern including a plurality of features having varying critical dimensions. The method includes the steps of: (1) obtaining data representing the pattern; (2) defining a plurality of distinct zones based on the critical dimensions of the plurality of features; (3) categorizing each of the features into one of the plurality of distinct zones; and (4) modifying the mask pattern for each feature categorized into a predefined distinct zone of the plurality of distinct zones.

Abstract: A method of generating a mask of use in printing a target pattern on a substrate. The method includes the steps of (a) determining a maximum width of features to be imaged on the substrate utilizing phase-structures formed in the mask; (b) identifying all features contained in the target pattern having a width which is equal to or less than the maximum width; (c) extracting all features having a width which is equal to or less than the maximum width from the target pattern; (d) forming phase-structures in the mask corresponding to all features identified in step (b); and (e) forming opaque structures in the mask for all features remaining in target pattern after performing step (c).

Abstract: A method of reversing the tone of an image to be printed in a layer of radiation sensitive material formed on a substrate includes defining a lithographic problem, designing a patterning device, determining a first illumination arrangement and a radiation sensitive material process capable of printing a positive tone of the lithographic feature; and determining a second illumination arrangement capable of printing a negative tone of the lithographic feature with the radiation sensitive material process.

Abstract: A method of generating masks for printing a pattern including a plurality of features having varying critical dimensions. The method includes the steps of: (1) obtaining data representing the pattern; (2) defining a plurality of distinct zones based on the critical dimensions of the plurality of features; (3) categorizing each of the features into one of the plurality of distinct zones; and (4) modifying the mask pattern for each feature categorized into a predefined distinct zone of the plurality of distinct zones.

Abstract: A lithographic apparatus includes a support structure configured to hold a phase shift mask, the phase shift mask configured to pattern a beam of unpolarized radiation according to a desired pattern and a substrate table configured to hold a substrate. The lithographic apparatus also includes a projection system configured to project the patterned beam onto a target portion of the substrate on which a negative resist layer is deposited to form an image of the pattern on the negative resist layer.

Abstract: A method of reversing the tone of an image to be printed in a layer of radiation sensitive material formed on a substrate includes defining a lithographic problem, designing a patterning device, determining a first illumination arrangement and a radiation sensitive material process capable of printing a positive tone of the lithographic feature; and determining a second illumination arrangement capable of printing a negative tone of the lithographic feature with the radiation sensitive material process.

Abstract: A method of generating a mask of use in printing a target pattern on a substrate. The method includes the steps of (a) determining a maximum width of features to be imaged on the substrate utilizing phase-structures formed in the mask; (b) identifying all features contained in the target pattern having a width which is equal to or less than the maximum width; (c) extracting all features having a width which is equal to or less than the maximum width from the target pattern; (d) forming phase-structures in the mask corresponding to all features identified in step (b); and (e) forming opaque structures in the mask for all features remaining in target pattern after performing step (c).

Abstract: A method of reversing the tone of an image to be printed in a layer of radiation sensitive material formed on a substrate includes defining a lithographic problem, the problem including a lithographic feature to be positively and negatively printed; designing a patterning device, the patterning device including a pattern, the pattern including the lithographic feature; determining a first illumination arrangement capable of positively printing the lithographic feature; determining a second illumination arrangement capable of negatively printing the lithographic feature; and switching the first illumination arrangement to the second illumination arrangement.

Abstract: A method of generating masks for printing a pattern including a plurality of features having varying critical dimensions. The method includes the steps of: (1) obtaining data representing the pattern; (2) defining a plurality of distinct zones based on the critical dimensions of the plurality of features; (3) categorizing each of the features into one of the plurality of distinct zones; and (4) modifying the mask pattern for each feature categorized into a predefined distinct zone of the plurality of distinct zones.

Abstract: A method of generating a mask of use in printing a target pattern on a substrate. The method includes the steps of (a) determining a maximum width of features to be imaged on the substrate utilizing phase-structures formed in the mask; (b) identifying all features contained in the target pattern having a width which is equal to or less than the maximum width; (c) extracting all features having a width which is equal to or less than the maximum width from the target pattern; (d) forming phase-structures in the mask corresponding to all features identified in step (b); and (e) forming opaque structures in the mask for all features remaining in target pattern after performing step (c).

Abstract: An method for creating an image on a photosensitive material with enhanced inside corner resolution using a raster scan exposure system. The photosensitive material may comprise a layer of an unexposed photomask. An energy beam scan is extended by one or more addressable locations beyond the boundaries of the desire pattern at inside corner locations in both X and Y axes. Thus, the image formed in the photosensitive material and, in turn, the attenuator material more accurately reflects the desired image as defined in a data file.

Abstract: An method for creating an image on a photosensitive material with enhanced inside corner resolution using a raster scan exposure system. The photosensitive material may comprise a layer of an unexposed photomask. An energy beam scan is extended by one or more addressable locations beyond the boundaries of the desire pattern at inside corner locations in both X and Y axes. Thus, the image formed in the photosensitive material and, in turn, the attenuator material more accurately reflects the desired image as defined in a data file.

Abstract: An method for creating an image on a photosensitive material with enhanced inside corner resolution using a raster scan exposure system. The photosensitive material may comprise a layer of an unexposed photomask. An energy beam scan is extended by one or more addressable locations beyond the boundaries of the desire pattern at inside corner locations in both X and Y axes. Thus, the image formed in the photosensitive material and, in turn, the attenuator material more accurately reflects the desired image as defined in a data file.

Abstract: A method for creating an image on an image plane utilizing a photomask comprised of a plurality of intersecting subresolution features. Energy created by an energy source is projected through the subresolution features which diffract the light to produce constructive or positive interference thereby resulting in an image being formed on the image plane that is different than the image or pattern of subresolution features on the photomask.