Patents by Inventor Doug Winandy

Doug Winandy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Phosphorous-doped silicon dioxide process to customize contact etch profiles
    Patent number: 7064087
    Abstract: A method for depositing a doped silicon dioxide layer is provided that allows the dopant concentration in the silicon dioxide layer to be controlled throughout the layer. By controlling the dopant concentration throughout the layer the etch profile of contact holes etched into the layer can be controlled and footing can be prevented or eliminated. During the deposition of the silicon dioxide, the amount of dopant is increased as the temperature of the wafer is increased and held constant while the temperature of the wafer is constant.
    Type: Grant
    Filed: November 15, 2001
    Date of Patent: June 20, 2006
    Assignee: Novellus Systems, Inc.
    Inventors: Michael Turner, Waikit Fung, Oliver Graudejus, Doug Winandy