Abstract: A method and apparatus for performing post-exposure bake operations is described herein. The apparatus includes a plate stack and enables formation of a first high ion density plasma before the ion concentration within the first high ion density plasma is reduced using a diffuser to form a second low ion density plasma. The second low ion density plasma is an electron cloud or a dark plasma. An electric field is formed between a substrate support and the diffuser and through the second low ion density plasma during post-exposure bake of a substrate disposed on the substrate support. The second low ion density plasma electrically couples the substrate support and the diffuser during application of the electric field. The plate stack is equipped with power supplies and insulators to enable the formation or modification of a plasma within three regions of a process chamber.

Abstract: Examples of a substrate support are provided herein. In some examples, the substrate support has a ceramic electrostatic chuck having a body. The body has a first side configured to support a substrate and a second side opposite the first side. The body has a chucking electrode, an active edge electrode disposed adjacent the chucking electrode, a floating mesh disposed below the chucking electrode, a heater disposed below the floating mesh, and a ground mesh disposed below the heater, wherein the ground mesh is adjacent the second side.

Abstract: Exemplary substrate support assemblies may include an electrostatic chuck body defining a substrate support surface that defines a substrate seat. The electrostatic chuck body may define a backside gas lumen that extends through a surface of the substrate seat. The assemblies may include a bias electrode coupled with the electrostatic chuck body. The bias electrode may include a plurality of conductive mesas that protrude upward across the substrate seat. The assemblies may include a support stem coupled with the electrostatic chuck body. The assemblies may include at least one chucking electrode embedded within the electrostatic chuck body. The assemblies may include at least one heater embedded within the electrostatic chuck body.

Abstract: Apparatus and method for substrate processing are described herein. More specifically, the apparatus and method are directed towards apparatus and method for performing a field guided post exposure bake operation on a semiconductor substrate. The apparatus is a processing module (100) and includes an upper portion (102) with an electrode (400) and a base portion (104) which is configured to support a substrate (500) on a substrate support surface (159). The upper portion (102) and the base portion (104) are actuated toward and away from one another using one or more arms (112) and form a process volume (404). The process volume (404) is filled with a process fluid and the processing module (100) is rotated about an axis (A). An electric field is applied to the substrate (500) by the electrode (400) before the process fluid is drained from the process volume (404).

Abstract: A method and apparatus for applying an electric field and/or a magnetic field to a photoresist layer without air gap intervention during photolithography processes is provided herein. The method and apparatus include a transfer device and a plurality of modules. The transfer device is configured to rotate a plurality of substrates between each of the modules, wherein one module includes a heating pedestal and another module includes a cooling pedestal. One module is utilized for inserting and removing the substrates from the system. At least the heating module is able to be sealed and filled with a process volume before applying the electric field.

Abstract: Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. A pedestal may be disposed within the processing volume and a first electrode may be coupled to the pedestal. A moveable stem may extend through the chamber body opposite the pedestal and a second electrode may be coupled to the moveable stem. In certain embodiments, a fluid containment ring may be coupled to the pedestal and a dielectric containment ring may be coupled to the second electrode.

Abstract: A method and apparatus for applying an electric field and/or a magnetic field to a photoresist layer without air gap intervention during photolithography processes is provided herein. The method and apparatus include an electrode assembly and a base assembly. The electrode assembly includes a permeable electrode. The base assembly includes one or more process fluid channels disposed around a circumference of the substrate support surface and configured to fill a process volume with a process fluid. The electrode assembly is configured to apply an electric field to a substrate disposed within the process volume.

Abstract: A method and apparatus for performing post-exposure bake cooling operations is described herein. The method begins by post exposure baking a substrate disposed on heated substrate support in a process chamber, the process chamber having a showerhead. The heated substrate support is moved to increase a distance between the heated substrate support and a cooled plate of the showerhead. The substrate is separated from the heated substrate support using a substrate lifting device. The substrate is moved into a close proximity to the cooled showerhead. The substrate is cooled until the substrate is less than about 70 degrees Celsius. The substrate is spaced away from the cooled showerhead using the substrate lifting device and aligning the substrate with a substrate transfer passage of the processing chamber for removal by a robot.

Abstract: Methods for depositing a dielectric material using RF bias pulses along with remote plasma source deposition for manufacturing semiconductor devices, particularly for filling openings with high aspect ratios in semiconductor applications are provided. For example, a method of depositing a dielectric material includes providing a gas mixture into a processing chamber having a substrate disposed therein, forming a remote plasma in a remote plasma source and delivering the remote plasma to an interior processing region defined in the processing chamber, applying a RF bias power to the processing chamber in pulsed mode, and forming a dielectric material in an opening defined in a material layer disposed on the substrate in the presence of the gas mixture and the remote plasma.

Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for verification and re-use of process fluids. The apparatus generally includes a tool for performing lithography, and a recirculation path coupled to the tool. The recirculation path generally includes a collection unit coupled at first end to a first end of the tool, and a probe coupled at a first end to a second end of the collection unit, the probe for determining one or more characteristics of a fluid flowing from the tool. The recirculation path of the apparatus further generally includes a purification unit coupled at a first end to a third end of the collection unit, the purification unit further coupled at a second end to a second end of the probe, the purification unit for changing a characteristic of the fluid.

Abstract: A method and apparatus for determining particle contamination of a process fluid is disclosed herein. In one example, a fluid resistivity measurement probe is provided. The system includes an upstream fluid conduit, a downstream fluid conduit, and a measuring section. The measuring section has a metal rod, and a ground electrode. The ground electrode surrounds and is coaxial with the metal rod. The upstream fluid conduit is coupled to a first end of the ground electrode. The downstream fluid conduit is coupled to a second end of the ground electrode. The metal rod and the ground electrode define a space therebetween. The space flows a fluid from the upstream fluid conduit to the downstream fluid conduit.

Abstract: A method and apparatus for performing post-exposure bake operations is described herein. The apparatus includes a plate stack and enables formation of a first high ion density plasma before the ion concentration within the first high ion density plasma is reduced using a diffuser to form a second low ion density plasma. The second low ion density plasma is an electron cloud or a dark plasma. An electric field is formed between a substrate support and the diffuser and through the second low ion density plasma during post-exposure bake of a substrate disposed on the substrate support. The second low ion density plasma electrically couples the substrate support and the diffuser during application of the electric field. The plate stack is equipped with power supplies and insulators to enable the formation or modification of a plasma within three regions of a process chamber.

Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for verification and re-use of process fluids. The apparatus generally includes a tool for performing lithography, and a recirculation path coupled to the tool. The recirculation path generally includes a collection unit coupled at first end to a first end of the tool, and a probe coupled at a first end to a second end of the collection unit, the probe for determining one or more characteristics of a fluid flowing from the tool. The recirculation path of the apparatus further generally includes a purification unit coupled at a first end to a third end of the collection unit, the purification unit further coupled at a second end to a second end of the probe, the purification unit for changing a characteristic of the fluid.

Abstract: A method and apparatus for applying an electric field and/or a magnetic field to a photoresist layer without air gap intervention during photolithography processes is provided herein. The method and apparatus include an immersion bake head, which includes an electrode and is configured to be alternated between a hot pedestal and a cold pedestal. The immersion bake head serves as a substrate carrier and applies an electric field to the substrate. The immersion bake head additionally serves to provide and remove process fluid from the substrate using a plurality of fluid conduits.

Abstract: A method and apparatus for applying an electric field and/or a magnetic field to a photoresist layer without air gap intervention during photolithography processes is provided herein. The method and apparatus include a transfer device and a plurality of modules. The transfer device is configured to rotate a plurality of substrates between each of the modules, wherein one module includes a heating pedestal and another module includes a cooling pedestal. One module is utilized for inserting and removing the substrates from the system. At least the heating module is able to be sealed and filled with a process volume before applying the electric field.

Abstract: A method and apparatus for applying an electric field and/or a magnetic field to a photoresist layer without air gap intervention during photolithography processes is provided herein. The method and apparatus include an electrode assembly and a base assembly. The electrode assembly includes a permeable electrode. The base assembly includes one or more process fluid channels disposed around a circumference of the substrate support surface and configured to fill a process volume with a process fluid. The electrode assembly is configured to apply an electric field to a substrate disposed within the process volume.

Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.

Abstract: Apparatus for a multi-source ion beam etching (IBE) system are provided herein. In some embodiments, a multi-source IBE system includes a multi-source lid comprising a multi-source adaptor and a lower chamber adaptor, a plurality of IBE sources coupled to the multi-source adaptor, a rotary shield assembly coupled to a shield motor mechanism configured to rotate the rotary shield, wherein the shield motor mechanism is coupled to a top portion of the multi-source lid, and wherein the rotary shield includes a body that has one IBE source opening formed through the body, and at least one beam conduit that engages the one IBE source opening in the rotary shield on one end, and engages the bottom portion of the IBE sources on the opposite end of the beam conduit.

Abstract: A method and apparatus for applying an electric field and/or a magnetic field to a photoresist layer without air gap intervention during photolithography processes is provided herein. The method and apparatus include a chamber body, which is configured to be filled with a process fluid, and a substrate carrier. The substrate carrier is disposed outside of the process volume while substrates are loaded onto the substrate carrier, but is rotated to a processing position either simultaneously or before entering the process fluid. The substrate carrier is rotated to a process position parallel to an electrode before an electric field is utilized to perform a post-exposure bake process on the substrate.

Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.