Patents by Inventor Douglas A. Buchberger, Jr.
Douglas A. Buchberger, Jr. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11088005Abstract: A substrate support assembly includes a ceramic puck and a thermally conductive base having an upper surface that is bonded to the ceramic puck. The thermally conductive base includes a plurality of thermal zones and a thermally managed material embedded in the thermally conductive base at the upper surface of the thermally conductive base in one or more of the plurality of thermal zones. The thermally managed material has different thermal conductive properties along a first direction and a second direction. The thermally conductive base further includes a plurality of thermal isolators that extend from the upper surface of the thermally conductive base towards a lower surface of the thermally conductive base between two or more of the plurality of thermal zones without contacting the lower surface of the thermally conductive base. Each of the plurality of thermal isolators provides a degree of thermal isolation.Type: GrantFiled: May 23, 2019Date of Patent: August 10, 2021Assignee: Applied Materials, Inc.Inventors: Vijay D. Parkhe, Konstantin Makhratchev, Jason Della Rosa, Hamid Noobakhsh, Brad L. Mays, Douglas A. Buchberger, Jr.
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Patent number: 10854425Abstract: Methods and systems for controlling temperatures in plasma processing chamber with reduced controller response times and increased stability. Temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. A feedforward control signal compensating disturbances in the temperature attributable to the plasma power may be combined with a feedback control signal counteracting error between a measured and desired temperature.Type: GrantFiled: February 2, 2016Date of Patent: December 1, 2020Assignee: Applied Materials, Inc.Inventors: Chetan Mahadeswaraswamy, Walter R Merry, Sergio Fukuda Shoji, Chunlei Zhang, Yashaswini Pattar, Duy D Nguyen, Tina Tsong, Shane C Nevil, Douglas A Buchberger, Jr., Fernando M Silveira, Brad L Mays, Kartik Ramaswamy, Hamid Noorbakhsh
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Patent number: 10770328Abstract: Apparatus for processing a substrate is disclosed herein. In some embodiments, a substrate support may include a substrate support having a support surface for supporting a substrate the substrate support having a central axis; a first electrode disposed within the substrate support to provide RF power to a substrate when disposed on the support surface; an inner conductor coupled to the first electrode about a center of a surface of the first electrode opposing the support surface, wherein the inner conductor is tubular and extends from the first electrode parallel to and about the central axis in a direction away from the support surface of the substrate support; an outer conductor disposed about the inner conductor; and an outer dielectric layer disposed between the inner and outer conductors, the outer dielectric layer electrically isolating the outer conductor from the inner conductor. The outer conductor may be coupled to electrical ground.Type: GrantFiled: September 5, 2018Date of Patent: September 8, 2020Assignee: APPLIED MATERIALS, INC.Inventors: Xing Lin, Douglas A. Buchberger, Jr., Xiaoping Zhou, Andrew Nguyen, Anchel Sheyner
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Publication number: 20200185192Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.Type: ApplicationFiled: February 14, 2020Publication date: June 11, 2020Inventors: James D. CARDUCCI, Hamid TAVASSOLI, Ajit BALAKRISHNA, Zhigang CHEN, Andrew NGUYEN, Douglas A. BUCHBERGER, JR., Kartik RAMASWAMY, Shahid RAUF, Kenneth S. COLLINS
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Patent number: 10615006Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.Type: GrantFiled: June 1, 2017Date of Patent: April 7, 2020Assignee: APPLIED MATERIALS, INC.Inventors: James D. Carducci, Hamid Tavassoli, Ajit Balakrishna, Zhigang Chen, Andrew Nguyen, Douglas A. Buchberger, Jr., Kartik Ramaswamy, Shahid Rauf, Kenneth S. Collins
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Publication number: 20200090946Abstract: Embodiments of the present invention provide an apparatus and methods for depositing a dielectric material using RF bias pulses along with remote plasma source deposition for manufacturing semiconductor devices, particularly for filling openings with high aspect ratios in semiconductor applications. In one embodiment, a method of depositing a dielectric material includes providing a gas mixture into a processing chamber having a substrate disposed therein, forming a remote plasma in a remote plasma source and delivering the remote plasma to an interior processing region defined in the processing chamber, applying a RF bias power to the processing chamber in pulsed mode, and forming a dielectric material in an opening defined in a material layer disposed on the substrate in the presence of the gas mixture and the remote plasma.Type: ApplicationFiled: September 17, 2018Publication date: March 19, 2020Inventors: Bhargav S. CITLA, Jethro TANNOS, Jingyi LI, Douglas A. BUCHBERGER, JR., Zhong Qiang HUA, Srinivas D. NEMANI, Ellie Y. YIEH
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Patent number: 10580620Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.Type: GrantFiled: June 30, 2016Date of Patent: March 3, 2020Assignee: APPLIED MATERIALS, INC.Inventors: James D. Carducci, Hamid Tavassoli, Ajit Balakrishna, Zhigang Chen, Andrew Nguyen, Douglas A. Buchberger, Jr., Kartik Ramaswamy, Shahid Rauf, Kenneth S. Collins
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Patent number: 10546728Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.Type: GrantFiled: June 30, 2016Date of Patent: January 28, 2020Assignee: APPLIED MATERIALS, INC.Inventors: James D. Carducci, Hamid Tavassoli, Ajit Balakrishna, Zhigang Chen, Andrew Nguyen, Douglas A. Buchberger, Jr., Kartik Ramaswamy, Shahid Rauf, Kenneth S. Collins
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Patent number: 10535502Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.Type: GrantFiled: June 30, 2016Date of Patent: January 14, 2020Assignee: Applied Materials, Inc.Inventors: James D. Carducci, Hamid Tavassoli, Ajit Balakrishna, Zhigang Chen, Andrew Nguyen, Douglas A. Buchberger, Jr., Kartik Ramaswamy, Shahid Rauf, Kenneth S. Collins
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Patent number: 10474033Abstract: Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. A pedestal may be disposed within the processing volume and a first electrode may be coupled to the pedestal. A moveable stem may extend through the chamber body opposite the pedestal and a second electrode may be coupled to the moveable stem. In certain embodiments, a fluid containment ring may be coupled to the pedestal and a dielectric containment ring may be coupled to the second electrode.Type: GrantFiled: August 31, 2017Date of Patent: November 12, 2019Assignee: Applied Materials, Inc.Inventors: Viachslav Babayan, Douglas A. Buchberger, Jr., Qiwei Liang, Ludovic Godet, Srinivas D. Nemani, Daniel J. Woodruff, Randy Harris, Robert B. Moore
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Patent number: 10453656Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.Type: GrantFiled: June 30, 2016Date of Patent: October 22, 2019Assignee: Applied Materials, Inc.Inventors: James D. Carducci, Hamid Tavassoli, Ajit Balakrishna, Zhigang Chen, Andrew Nguyen, Douglas A. Buchberger, Jr., Kartik Ramaswamy, Shahid Rauf, Kenneth S. Collins
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Publication number: 20190279893Abstract: A substrate support assembly includes a ceramic puck and a thermally conductive base having an upper surface that is bonded to the ceramic puck. The thermally conductive base includes a plurality of thermal zones and a thermally managed material embedded in the thermally conductive base at the upper surface of the thermally conductive base in one or more of the plurality of thermal zones. The thermally managed material has different thermal conductive properties along a first direction and a second direction. The thermally conductive base further includes a plurality of thermal isolators that extend from the upper surface of the thermally conductive base towards a lower surface of the thermally conductive base between two or more of the plurality of thermal zones without contacting the lower surface of the thermally conductive base. Each of the plurality of thermal isolators provides a degree of thermal isolation.Type: ApplicationFiled: May 23, 2019Publication date: September 12, 2019Inventors: Vijay D. Parkhe, Konstantin Makhratchev, Jason Della Rosa, Hamid Noobakhsh, Brad L. Mays, Douglas A. Buchberger, JR.
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Patent number: 10386126Abstract: Apparatus for controlling the thermal uniformity of a substrate can control the thermal uniformity of the substrate to be more uniform or to be non-uniform. In some embodiments, an apparatus for controlling the thermal uniformity of a substrate includes: a substrate support having a support surface to support a substrate thereon. A flow path is disposed within the substrate support to flow a heat transfer fluid beneath the support surface. The flow path comprises a first portion and a second portion, each portion having a substantially equivalent axial length. The first portion is spaced about 2 mm to about 10 mm from the second portion. The first portion provides a flow of heat transfer fluid in a direction opposite a flow of heat transfer fluid of the second portion.Type: GrantFiled: February 22, 2016Date of Patent: August 20, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Kallol Bera, Xiaoping Zhou, Douglas A. Buchberger, Jr., Andrew Nguyen, Hamid Tavassoli, Surajit Kumar, Shahid Rauf
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Publication number: 20190187563Abstract: Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. A pedestal may be disposed within the processing volume and a first electrode may be coupled to the pedestal. A moveable stem may extend through the chamber body opposite the pedestal and a second electrode may be coupled to the moveable stem. In certain embodiments, a fluid containment ring may be coupled to the pedestal and a dielectric containment ring may be coupled to the second electrode.Type: ApplicationFiled: February 11, 2019Publication date: June 20, 2019Inventors: Viachslav BABAYAN, Douglas A. BUCHBERGER, JR., Qiwei LIANG, Ludovic GODET, Srinivas D. NEMANI, Daniel J. WOODRUFF, Randy HARRIS, Robert B. MOORE
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Patent number: 10304715Abstract: A substrate support assembly includes a ceramic puck and a thermally conductive base having an upper surface that is bonded to a lower surface of the ceramic puck. Trenches are formed in the thermally conductive base approximately concentric around a center of the thermally conductive base. The trenches extend from the upper surface towards a lower surface of the thermally conductive base without contacting the lower surface of the thermally conductive base. The thermally conductive base includes thermal zones. The substrate support assembly further includes a thermally insulating material disposed in the trenches. The thermally insulating material in a trench of the trenches provides a degree of thermal isolation between two of the thermal zones separated by the trench at the upper surface of the thermally conductive base.Type: GrantFiled: May 11, 2018Date of Patent: May 28, 2019Assignee: Applied Materials, Inc.Inventors: Vijay D. Parkhe, Konstantin Makhratchev, Jason Della Rosa, Hamid Noorbakhsh, Brad L. Mays, Douglas A. Buchberger, Jr.
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Publication number: 20190115241Abstract: The present disclosure relates to an electrostatic chuck, including: a base having a dielectric first surface to support a substrate thereon during processing; and an electrode disposed within the base proximate the dielectric first surface to facilitate electrostatically coupling the substrate to the dielectric first surface during use, wherein the dielectric first surface is sufficiently hydrophobic to electrostatically retain the substrate to the dielectric first surface when contacted with water. Methods of making and using the electrostatic chuck under wet conditions are also disclosed.Type: ApplicationFiled: October 12, 2017Publication date: April 18, 2019Inventors: Kim VELLORE, Douglas A. BUCHBERGER, JR., Niranjan Kumar, Seshadri RAMASWAMI
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Publication number: 20190085467Abstract: A plasma reactor for processing a workpiece includes a reactor chamber having a ceiling and a sidewall and a workpiece support facing the ceiling and defining a processing region, and a pair of concentric independently excited RF coil antennas overlying the ceiling and a side RF coil concentric with the side wall and facing the side wall below the ceiling, and being excited independently.Type: ApplicationFiled: November 19, 2018Publication date: March 21, 2019Inventors: Andrew Nguyen, Kenneth S. Collins, Kartik Ramaswamy, Shahid Rauf, James D. Carducci, Douglas A. Buchberger, Jr., Ankur Agarwal, Jason A. Kenney, Leonid Dorf, Ajit Balakrishna, Richard Fovell
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Publication number: 20190051551Abstract: Apparatus for processing a substrate is disclosed herein. In some embodiments, a substrate support may include a substrate support having a support surface for supporting a substrate the substrate support having a central axis; a first electrode disposed within the substrate support to provide RF power to a substrate when disposed on the support surface; an inner conductor coupled to the first electrode about a center of a surface of the first electrode opposing the support surface, wherein the inner conductor is tubular and extends from the first electrode parallel to and about the central axis in a direction away from the support surface of the substrate support; an outer conductor disposed about the inner conductor; and an outer dielectric layer disposed between the inner and outer conductors, the outer dielectric layer electrically isolating the outer conductor from the inner conductor. The outer conductor may be coupled to electrical ground.Type: ApplicationFiled: September 5, 2018Publication date: February 14, 2019Inventors: XING LIN, DOUGLAS A. BUCHBERGER, JR., XIAOPING ZHOU, ANDREW NGUYEN, ANCHEL SHEYNER
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Patent number: 10203604Abstract: Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. A pedestal may be disposed within the processing volume and a first electrode may be coupled to the pedestal. A moveable stem may extend through the chamber body opposite the pedestal and a second electrode may be coupled to the moveable stem. In certain embodiments, a fluid containment ring may be coupled to the pedestal and a dielectric containment ring may be coupled to the second electrode.Type: GrantFiled: January 6, 2016Date of Patent: February 12, 2019Assignee: Applied Materials, Inc.Inventors: Viachslav Babayan, Douglas A. Buchberger, Jr., Qiwei Liang, Ludovic Godet, Srinivas D. Nemani, Daniel J. Woodruff, Randy Harris, Robert B. Moore
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Publication number: 20180374736Abstract: Embodiments of the disclosure relate to the use of an electrostatic carrier for securing, transporting and assembling dies on a substrate. In one embodiment, an electrostatic carrier includes a body having a top surface and a bottom surface, at least a first bipolar chucking electrode disposed within the body, at least two contact pads disposed on the bottom surface of the body and connected to the first bipolar chucking electrode, and a floating electrode disposed between the first bipolar chucking electrode and the bottom surface. In another embodiment, a die-assembling system includes the electrostatic carrier configured to electrostatically secure a plurality of dies, a carrier-holding platform configured to hold the electrostatic carrier, a die input platform and a loading robot having a range of motion configured to pick the plurality of dies from the die input platform and place them on the electrostatic carrier.Type: ApplicationFiled: June 14, 2018Publication date: December 27, 2018Inventors: Niranjan KUMAR, Kim Ramkumar VELLORE, Douglas H. BURNS, Gautam PISHARODY, Seshadri RAMASWAMI, Douglas A. BUCHBERGER, JR.