Patents by Inventor Douglas A. Pike, Jr.
Douglas A. Pike, Jr. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 5801417Abstract: A recessed gate power MOSFET is formed on a substrate (20) including a P-body layer (26), N-drain layer (24) and optional P+ layer (22) for IGBT. A trenching protective layer (30) formed on the substrate upper surface (28) is patterned to define exposed areas (46) as stripes or a matrix, and protected areas. Sidewall spacers (44) of predetermined thickness (52) with inner surfaces (48) contact the protective layer sidewalls. A first trench (50) is formed in substrate areas (46) with sidewalls aligned to the sidewall spacer outer surfaces (47) and extending depthwise through the P-body layer (26) to at least a predetermined depth (56). Gate oxide (60) is formed on the trench walls and gate polysilicon (62) refills the trench to a level (64) near substrate upper surface (28). Oxide (68) between sidewall spacers (44) covers polysilicon (62). Removing the protective layer exposes upper substrate surface (28') between spacer inner surfaces (48).Type: GrantFiled: August 13, 1993Date of Patent: September 1, 1998Assignee: Advanced Power Technology, Inc.Inventors: Dah Wen Tsang, John W. Mosier, II, Douglas A. Pike, Jr., Theodore O. Meyer
-
Patent number: 5648283Abstract: A gate power MOSFET on substrate (20) has a P-body layer (26), N-drain layer (24) and optional P+ layer (22) for IGBT. Layer (430) on surface (28) patterns areas (446) as stripes or a matrix, and protected areas. Undercut sidewalls (444) of thickness (452), with protruding rims (447), contact the sides of layer (434'). Trench (450) in areas (446) has silicon sidewalls aligned to oxide sidewall (447) and extending depthwise through P-body layer (26) to depth (456). Gate oxide (460) is formed on the trench walls and gate polysilicon (462) refills trench (450) to a level (464) near surface (28) demarcated by the undercut sidewall rims (447). Oxide (468) between spacers (444) covers polysilicon (462). Removing layer (430) exposes surface (28') between the sidewalls (444). Source layer (72) is doped atop the body layer (26') and then trenched to form trench (80) having sidewalls aligned to inner side faces of sidewalls (444).Type: GrantFiled: January 31, 1994Date of Patent: July 15, 1997Assignee: Advanced Power Technology, Inc.Inventors: Dah Wen Tsang, Dumitru Sdrulla, Douglas A. Pike, Jr., Theodore O. Meyer, John W. Mosier, II, deceased
-
Patent number: 5528058Abstract: For IGBT, MCT or like devices, the substrate is formed with P+, N+ and N- layers and PN diffusions to define body and source regions in the N-layer and a MOS-gated channel at the upper surface. The N-layer is sized and doped (.about.10.sup.14 /cm.sup.3) to block reverse bias voltage. The N+ layer is >20 .mu.m thick and doped below .about.10.sup.17 /cm.sup.3 but above the N- doping to enhance output impedance and reduce gain at high V.sub.ce conditions. Or the N+ layer is formed with a thin (.about.5 .mu.m) highly doped (>10.sup.17 /cm.sup.3) layer and a thick (>20 .mu.m) layer of .about.10.sup.16 /cm.sup.3 doping. A platinum dose of 10.sup.13 to 10.sup.16 /cm.sup.3 is ion implanted and diffused into the silicon to effect lifetime control. Gate and source contacts and body and source diffusions have an inter-digitated finger pattern with complementary tapers to minimize current crowding and wide gate buses to minimize signal delay.Type: GrantFiled: October 13, 1994Date of Patent: June 18, 1996Assignee: Advanced Power Technology, Inc.Inventors: Douglas A. Pike, Jr., Dah W. Tsang, James M. Katana, Dumitru Sdrulla
-
Patent number: 5283202Abstract: For IGBT, MCT or like devices, the substrate is formed with P+, N+ and N- layers and PN diffusions to define body and source regions in the N-layer and a MOS-gated channel at the upper surface. The N-layer is sized and doped (.about.10.sup.14 /cm.sup.3) to block reverse bias voltage. The N+ layer is >20 .mu.m thick and doped below .about.10.sup.17 /cm.sup.3 but above the N- doping to enhance output impedance and reduce gain at high V.sub.ce conditions. Or the N+ layer is formed with a thin (.about.5 .mu.m) highly doped (>10.sup.17 /cm.sup.3) layer and a thick (>20 .mu.m) layer of .about.10.sup.16 /cm.sup.3 doping. A platinum dose of 10.sup.13 to 10.sup.16 /cm.sup.2 is ion implanted and diffused into the silicon to effect lifetime control. Gate and source contacts and body and source diffusions have an inter-digitated finger pattern with complementary tapers to minimize current crowding and wide gate buses to minimize signal delay.Type: GrantFiled: September 15, 1992Date of Patent: February 1, 1994Assignee: Advanced Power Technology, Inc.Inventors: Douglas A. Pike, Jr., Dah W. Tsang, James M. Katana, Dumitra Scrulla
-
Patent number: 5283201Abstract: A recessed gate power MOSFET is formed on a substrate (20) including a P-body layer (26), N-drain layer (24) and optional P+ layer (22) for IGBT. A trenching protective layer (30) formed on the substrate upper surface (28) is patterned to define exposed areas (46) as stripes or a matrix, and protected areas. Sidewall spacers (44) of predetermined thickness (52) with inner surfaces (48) contact the protective layer sidewalls. A first trench (50) is formed in substrate areas (46) with sidewalls aligned to the sidewall spacer outer surfaces (47) and extending depthwise through the P-body layer (26) to at least a predetermined depth (56). Gate oxide (60) is formed on the trench walls and gate polysilicon (62) refills the trench to a level (64) near substrate upper surface (28). Oxide (68) between sidewall spacers (44) covers polysilicon (62). Removing the protective layer exposes upper substrate surface (28') between spacer inner surfaces (48).Type: GrantFiled: August 7, 1992Date of Patent: February 1, 1994Assignee: Advanced Power Technology, Inc.Inventors: Dah W. Tsang, John W. Mosier, II, Douglas A. Pike, Jr., Theodore O. Meyer
-
Patent number: 5262336Abstract: For IGBT, MCT or like devices, the substrate is formed with P+, N+ and N- layers and PN diffusions to define body and source regions in the N-layer and a MOS-gated channel at the upper surface. The N-layer is sized and doped (.about.10.sup.14 /cm.sup.3) to block reverse bias voltage. The N+ layer is >20 .mu.m thick and doped below .about.10.sup.17 /cm.sup.3 but above the N- doping to enhance output impedance and reduce gain at high V.sub.ce conditions. Or the N+ layer is formed with a thin (.about.5 .mu.m) highly doped (>10.sup.17 /cm.sup.3) layer and a thick (>20 .mu.m) layer of .about.10.sup.16 /cm.sup.3 doping. A platinum dose of 10.sup.13 to .about.10.sup.16 /cm.sup.2 is ion implanted and diffused into the silicon to effect lifetime control. Gate and source contacts and body and source diffusions have an inter-digitated finger pattern with complementary tapers to minimize current crowding and wide gate buses to minimize signal delay.Type: GrantFiled: March 13, 1992Date of Patent: November 16, 1993Assignee: Advanced Power Technology, Inc.Inventors: Douglas A. Pike, Jr., Dah W. Tsang, James M. Katana
-
Patent number: 5190885Abstract: For IGBT, MCT or like devices, the substrate is formed with P+, N+ and N- layers and PN diffusions to define body and source regions in the N-layer and a MOS-gated channel at the upper surface. The N-layer is sized and doped (.about.10.sup.14 /cm.sup.3) to block reverse bias voltage. The N+ layer is >20 .mu.m thick and doped below .about.10.sup.17 /cm.sup.3 but above the N- doping to enhance output impedance and reduce gain at high V.sub.ce conditions. Or the N+ layer is formed with a thin (.about.5 .mu.m) highly doped (>10.sup.17 /cm.sup.3) layer and a thick (>20 .mu.m) layer of .about.10.sup.16 /cm.sup.3 doping. A platinum dose of 10.sup.13 to 10.sup.16 /cm.sup.2 is ion implanted and diffused into the silicon to effect lifetime control. Gate and source contacts and body and source diffusions have an inter-digitated finger pattern with complementary tapers to minimize current crowding and wide gate buses to minimize signal delay.Type: GrantFiled: March 13, 1992Date of Patent: March 2, 1993Assignee: Advanced Power Technology, Inc.Inventors: Douglas A. Pike, Jr., Dah W. Tsang, James M. Katana
-
Patent number: 5045903Abstract: A dopant-opaque layer of polysilicon is deposited on gate oxide on the upper substrate surface to serve as a pattern definer during fabrication of the device. It provides control over successive P and N doping steps used to create the necessary operative junctions within a silicon substrate and the conductive structures formed atop the substrate. A trench is formed in the upper silicon surface and a source conductive layer is deposited to electrically contact the source region as a gate conductive layer is deposited atop the gate oxide layer. The trench sidewall is profile tailored using a novel O.sub.2 -SF.sub.6 plasma etch technique. An oxide sidewall spacer is formed on the sides of the pattern definer and gate oxide structures, before depositing the conductive material. A planarizing layer is applied and used as a mask for selectively removing any conductive material deposited atop the oxide spacer.Type: GrantFiled: November 16, 1989Date of Patent: September 3, 1991Assignee: Advanced Power Technology, Inc.Inventors: Theodore O. Meyer, John W. Mosier, II, Douglas A. Pike, Jr., Theodore G. Hollinger, Dah W. Tsang
-
Patent number: 5019522Abstract: A dopant-opaque layer of polysilicon is deposited on gate oxide on the upper substrate surface to serve as a pattern definer during fabrication of the device. It provides control over successive P and N doping steps used to create the necessary operative junctions within a silicon substrate and the conductive structures formed atop the substrate. A trench is formed in the upper silicon surface and a source conductive layer is deposited to electrically contact the source region as a gate conductive layer is deposited atop the gate oxide layer. The trench sidewall is profile tailored using a novel O.sub.2 -SF.sub.6 plasma etch technique. An oxide sidewall spacer is formed on the sides of the pattern definer and gate oxide structure, before depositing the conductive material. A planarizing layer is applied and used as a mask for selectively removing any conductive material deposited atop the oxide spacer.Type: GrantFiled: January 2, 1990Date of Patent: May 28, 1991Assignee: Advanced Power Technology, Inc.Inventors: Theodore O. Meyer, John W. Mosier, II, Douglas A. Pike, Jr., Theodore G. Hollinger, Dah W. Tsang
-
Patent number: 4895810Abstract: A dopant-opaque layer of polysilicon is deposited on gate oxide on the upper substrate surface to serve as a pattern definer during fabrication of the device. It provides control over successive P and N doping steps used to create the necessary operative junctions within a silicon substrate and the conductive structures formed atop the substrate. A trench is formed in the upper silicon surface and a source conductive layer is deposited to electrically contact the source region as a gate conductive layer is deposited atop the gate oxide layer. The trench sidewall is profile tailored using a novel O.sub.2 --SF.sub.6 plasma etch technique. An oxide sidewall spacer is formed on the sides of the pattern definer and gate oxide structures, before depositing the conductive material. A planarizing layer is applied and used as a mask for selectively removing any conductive material deposited atop the oxide spacer.Type: GrantFiled: May 17, 1988Date of Patent: January 23, 1990Assignee: Advanced Power Technology, Inc.Inventors: Theodore O. Meyer, John W. Mosier, II, Douglas A. Pike, Jr., Theodore G. Hollinger
-
Patent number: 4789886Abstract: A high voltage semiconductor includes an electrically floating conductive layer located adjacent the field oxide in the gap region between a junction pair. The electrically floating conductive layer allows free charge in the insulating layers to be dissipated. As a result, the depletion region in the substrate is extended and the breakdown voltage of the device is improved considerably.Type: GrantFiled: January 20, 1987Date of Patent: December 6, 1988Assignee: General Instrument CorporationInventor: Douglas A. Pike, Jr.