Patents by Inventor Douglas A. Prinslow
Douglas A. Prinslow has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20160245861Abstract: Devices for mapping logical addresses to physical locations on an integrated circuit die are disclosed herein. An embodiment includes a die which has a plurality of bits that are electrically accessible by way of logical addresses. A plurality of bits have intentionally induced defects that form a predetermined fault pattern.Type: ApplicationFiled: March 2, 2016Publication date: August 25, 2016Inventors: Stanton Petree Ashburn, Daniel L. Corum, JR., Abha Singh Kasper, Harold C. Waite, Eric D. Rullan, Donald L. Plumton, Douglas A. Prinslow
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Patent number: 9378848Abstract: Methods and devices for mapping logical addresses to physical locations on an integrated circuit die are disclosed herein. An embodiment of the method includes fabricating a die, where the die has a plurality of bits that are electrically accessible by way of logical addresses. A plurality of bits have known defects that form a predetermined fault pattern at a predetermined location on the die. The bits are tested by using the logical addresses, wherein the testing yields data as to the functionality of the bits. The test results are searched for the predetermined fault pattern. The physical locations of the defective bits constituting the predetermined fault pattern are correlated with their logical addresses based on the location of the predetermined fault pattern.Type: GrantFiled: June 7, 2012Date of Patent: June 28, 2016Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Stanton Petree Ashburn, Daniel L. Corum, Abha Singh Kasper, Harold C. Waite, Eric D. Rullan, Donald L. Plumton, Douglas A. Prinslow
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Publication number: 20130329508Abstract: Methods and devices for mapping logical addresses to physical locations on an integrated circuit die are disclosed herein. An embodiment of the method includes fabricating a die, where the die has a plurality of bits that are electrically accessible by way of logical addresses. A plurality of bits have known defects that form a predetermined fault pattern at a predetermined location on the die. The bits are tested by using the logical addresses, wherein the testing yields data as to the functionality of the bits. The test results are searched for the predetermined fault pattern. The physical locations of the defective bits constituting the predetermined fault pattern are correlated with their logical addresses based on the location of the predetermined fault pattern.Type: ApplicationFiled: June 7, 2012Publication date: December 12, 2013Applicant: Texas Instruments IncorporatedInventors: Stanton Petree Ashburn, Daniel L. Corum, Abha Singh Kasper, Harold C. Waite, Eric D. Rullan, Donald L. Plumton, Douglas A. Prinslow
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Patent number: 7109838Abstract: An inductor integrated in a semiconductor device comprises a first and second lower electrical trace, an upper electrical trace, aligned at a first end with a first end of the first lower electrical trace and at a second end with a second end of the second lower electrical trace, a first via intercoupling the first end of the upper electrical trace with the first end of the first lower electrical trace, and a second via intercoupling the second end of the upper electrical trace with the second end of the second lower electrical trace.Type: GrantFiled: September 10, 2001Date of Patent: September 19, 2006Assignee: Texas Instruments IncorporatedInventors: Kenneth D. Brennan, Douglas A. Prinslow, David B. Aldrich
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Patent number: 6642601Abstract: A fuse (50, 150, 200) with a low fusing current includes a first contact element (51, 151, 201) and a second contact element (51, 151, 201). A fusing element (53, 153, 203) is coupled between the first and second contact elements (51, 151, 201). At least a majority of the fusing element (53, 153, 203) comprises silicided material.Type: GrantFiled: October 25, 2001Date of Patent: November 4, 2003Assignee: Texas Instruments IncorporatedInventors: Andrew Marshall, Douglas A. Prinslow
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Patent number: 6620700Abstract: A capacitor (110) having a bottom plate (104) that includes undoped polysilicon (106) which has been silicided (108). An advantage of the invention is providing a capacitor (110) having reduced parasitic capacitance to the substrate (100) and reduced sheet resistance of the bottom plate (104).Type: GrantFiled: March 20, 2002Date of Patent: September 16, 2003Assignee: Texas Instruments IncorporatedInventors: Douglas A. Prinslow, F. Scott Johnson
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Patent number: 6600208Abstract: A versatile system for reducing electromagnetic interference resulting from an inductor (300) formed within an integrated circuit is disclosed, including an inductor layer (310) having conductive elements (326) about its perimeter, first (306) and second (308) isolation layers disposed upon on opposite sides of the inductor layer and having conductive elements (326) about their perimeters, and first (302) and second (304) shield layers surrounding the first and second isolation layers, respectively, and coupled together by the conductive elements (326) of the isolation and inductor layers.Type: GrantFiled: September 10, 2001Date of Patent: July 29, 2003Assignee: Texas Instruments IncorporatedInventors: Kenneth D. Brennan, Douglas A. Prinslow, David B. Aldrich
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Patent number: 6458711Abstract: A self-aligned silicide process with a selective etch of unreacted metal (plus any nitride) with respect to silicide plus a two step process of highly selective strip of unreacted metal (plus any nitride) followed by a silicide etch to remove unwanted silicide filament.Type: GrantFiled: March 20, 1998Date of Patent: October 1, 2002Assignee: Texas Instruments IncorporatedInventors: Sean C. O'Brien, Douglas A. Prinslow
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Publication number: 20020096736Abstract: A versatile system for reducing electromagnetic interference resulting from an inductor (300) formed within an integrated circuit is disclosed, including an inductor layer (310) having conductive elements (326) about its perimeter, first (306) and second (308) isolation layers disposed upon on opposite sides of the inductor layer and having conductive elements (326) about their perimeters, and first (302) and second (304) shield layers surrounding the first and second isolation layers, respectively, and coupled together by the conductive elements (326) of the isolation and inductor layers.Type: ApplicationFiled: September 10, 2001Publication date: July 25, 2002Inventors: Kenneth D. Brennan, Douglas A. Prinslow, David B. Aldrich
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Publication number: 20020096738Abstract: A capacitor (110) having a bottom plate (104) that comprises undoped polysilicon (106) which has been silicided (108). An advantage of the invention is providing a capacitor (110) having reduced parasitic capacitance to the substrate (100) and reduced sheet resistance of the bottom plate (104).Type: ApplicationFiled: March 20, 2002Publication date: July 25, 2002Inventors: Douglas A. Prinslow, F. Scott Johnson
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Publication number: 20020074618Abstract: A fuse (50, 150, 200) with a low fusing current includes a first contact element (51, 151, 201) and a second contact element (51, 151, 201). A fusing element (53, 153, 203) is coupled between the first and second contact elements (51, 151, 201). At least a majority of the fusing element (53, 153, 203) comprises silicided material.Type: ApplicationFiled: October 25, 2001Publication date: June 20, 2002Inventors: Andrew Marshall, Douglas A. Prinslow
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Publication number: 20020058355Abstract: An inductor integrated in a semiconductor device is disclosed, comprising a first and second lower electrical trace, an upper electrical trace, aligned at a first end with a first end of the first lower electrical trace and at a second end with a second end of the second lower electrical trace, a first via intercoupling the first end of the upper electrical trace with the first end of the first lower electrical trace, and a second via intercoupling the second end of the upper electrical trace with the second end of the second lower electrical trace.Type: ApplicationFiled: September 10, 2001Publication date: May 16, 2002Inventors: Kenneth D. Brennan, Douglas A. Prinslow, David B. Aldrich
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Patent number: 6380609Abstract: A capacitor (110) having a bottom plate (104) that comprises undoped polysilicon (106) which has been silicided (108). An advantage of the invention is providing a capacitor (110) having reduced parasitic capacitance to the substrate (100) and reduced sheet resistance of the bottom plate (104).Type: GrantFiled: September 14, 2000Date of Patent: April 30, 2002Assignee: Texas Instruments IncorporatedInventors: Douglas A. Prinslow, F. Scott Johnson
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Patent number: 6262445Abstract: The use of silicon carbide to form sidewall spacers allows the use of a lower temperature deposition step, and provides greater etch selectivity with respect to oxide.Type: GrantFiled: March 25, 1999Date of Patent: July 17, 2001Assignee: Texas Instruments IncorporatedInventors: Leland S. Swanson, Douglas A. Prinslow
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Patent number: 6200910Abstract: A strip for TiN with selectivity to TiSi2 consisting of a water solution of H2O2 with possible small amounts of NH4OH.Type: GrantFiled: October 6, 1998Date of Patent: March 13, 2001Assignee: Texas Instruments IncorporatedInventors: Sean O'Brien, Douglas A. Prinslow, James T. Manos
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Patent number: 6103590Abstract: A method of selectively forming porous silicon regions (106) in a silicon substrate (100). A masking layer (104) of SiC is deposited by PECVD over the substrate (100) using an organosilicon precursor gas such as trimethylsilane, silane/methane, or tetramethylsilane at a temperature between 200-500.degree. C. The masking layer (104) of SiC is then patterned and etched to expose the region of the substrate (100) where porous silicon is desired. An anodization process is performed to convert a region of the substrate to porous silicon (106). The SiC masking layer (104) withstands the HF electrolyte of the anodization process with little to no degradation.Type: GrantFiled: December 9, 1998Date of Patent: August 15, 2000Assignee: Texas Instruments IncorporatedInventors: Leland S. Swanson, Douglas A. Prinslow
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Patent number: 5888903Abstract: A self-aligned silicide method with Ti deposition, reaction, strip of TiN with selectivity to TiSi.sub.2 consisting of a water solution of H.sub.2 O.sub.2 with possible small amounts of NH.sub.4 OH, phase conversion anneal, and then strip of TiSi.sub.2 filaments with a water solution of H.sub.2 O.sub.2 plus NH.sub.4 OH.Type: GrantFiled: June 25, 1996Date of Patent: March 30, 1999Assignee: Texas Instruments IncorporatedInventors: Sean O'Brien, Douglas A. Prinslow
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Patent number: 5656524Abstract: A polysilicon resistor (40) includes a field oxide layer (12) and a polysilicon layer (20) that covers a portion of field oxide layer (12). The polysilicon layer (20) possesses a predetermined electrical resistance value. Nitride/oxide stack (42) covers a predetermined portion of the polysilicon layer (20) and forms at least one exposed location of polysilicon layer (20) on which not to implant a dopant to achieve a predetermined resistance value. Silicide layer (34) covers exposed location.Type: GrantFiled: June 7, 1995Date of Patent: August 12, 1997Assignee: Texas Instruments IncorporatedInventors: Robert H. Eklund, Douglas A. Prinslow, David B. Scott