Patents by Inventor Douglas Andrew Buchanan
Douglas Andrew Buchanan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7923743Abstract: A method (and resultant structure) of forming a semiconductor structure, includes forming a mixed rare earth oxide on silicon. The mixed rare earth oxide is lattice-matched to silicon.Type: GrantFiled: November 18, 2009Date of Patent: April 12, 2011Assignee: International Business Machines CorporationInventors: Nestor Alexander Bojarczuk, Jr., Douglas Andrew Buchanan, Supratik Guha, Vijay Narayanan, Lars-Ake Ragnarsson
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Publication number: 20100065815Abstract: A method (and resultant structure) of forming a semiconductor structure, includes forming a mixed rare earth oxide on silicon. The mixed rare earth oxide is lattice-matched to silicon.Type: ApplicationFiled: November 18, 2009Publication date: March 18, 2010Applicant: International Business Machines CorporationInventors: Nestor Alexander Bojarczuk, JR., Douglas Andrew Buchanan, Supratik Guha, Vijay Narayanan, Lars-Ake Ragnarsson
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Patent number: 7648864Abstract: A method (and resultant structure) of forming a semiconductor structure, includes forming a mixed rare earth oxide on silicon. The mixed rare earth oxide is lattice-matched to silicon.Type: GrantFiled: August 22, 2008Date of Patent: January 19, 2010Assignee: International Business Machines CorporationInventors: Nestor Alexander Bojarczuk, Jr., Douglas Andrew Buchanan, Supratik Guha, Vijay Narayanan, Lars-Ake Ragnarsson
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Publication number: 20080308831Abstract: A method (and resultant structure) of forming a semiconductor structure, includes forming a mixed rare earth oxide on silicon. The mixed rare earth oxide is lattice-matched to silicon.Type: ApplicationFiled: August 22, 2008Publication date: December 18, 2008Applicant: International Business Machines CorporationInventors: Nestor Alexander Bojarczuk, JR., Douglas Andrew Buchanan, Supratik Guha, Vijay Narayanan, Lars-Ake Ragnarsson
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Patent number: 7432550Abstract: A method (and resultant structure) of forming a semiconductor structure, includes forming a mixed rare earth oxide on silicon. The mixed rare earth oxide is lattice-matched to silicon.Type: GrantFiled: November 30, 2004Date of Patent: October 7, 2008Assignee: International Business Machines CorporationInventors: Nestor Alexander Bojarczuk, Jr., Douglas Andrew Buchanan, Supratik Guha, Vijay Narayanan, Lars-Ake Ragnarsson
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Patent number: 6852575Abstract: A method (and resultant structure) of forming a semiconductor structure, includes forming a mixed rare earth oxide on silicon. The mixed rare earth oxide is lattice-matched to silicon.Type: GrantFiled: July 5, 2001Date of Patent: February 8, 2005Assignee: International Business Machines CorporationInventors: Nestor Alexander Bojarczuk, Jr., Douglas Andrew Buchanan, Supratik Guha, Vijay Narayanan, Lars-Ake Ragnarsson
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Patent number: 6756646Abstract: A method for forming an oxynitride gate dielectric in a semiconductor device and gate dielectric structure formed by the method are disclosed. In the method, an oxynitride layer is first formed on a silicon surface and then re-oxidized with a gas mixture containing oxygen and at least one halogenated species such that an oxynitride layer with a controlled nitrogen profile and a layer of substantially silicon dioxide formed underneath the oxynitride film is obtained. The oxynitride film layer can be formed by either contacting a surface of silicon with at least one gas that contains. nitrogen and/or oxygen at a temperature of not less than 500° C. or by a chemical vapor deposition technique. The re-oxidation process may be carried out by a thermal process in an oxidizing halogenated atmosphere containing oxygen and a halogenated species such as HCl, CH2Cl2, C2H3Cl3, C2H2Cl2. CH3Cl and CHCl3.Type: GrantFiled: May 22, 2001Date of Patent: June 29, 2004Assignee: International Business Machines CorporationInventors: Douglas Andrew Buchanan, Matthew Warren Copel, Patrick Ronald Varekamp
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Publication number: 20030203653Abstract: The present invention discloses a method for forming a layer of nitrogen and silicon containing material on a substrate by first providing a heated substrate and then flowing a gas which has silicon and nitrogen atoms but no carbon atoms in the same molecule over said heated substrate at a pressure of not higher than 500 Torr, such that a layer of nitrogen and silicon containing material is formed on the surface. The present invention is further directed to a composite structure that includes a substrate and a layer of material containing nitrogen and silicon but not carbon overlying the substrate for stopping chemical species from reaching the substrate. The present invention is further directed to a structure that includes a semiconducting substrate, a gate insulator on the substrate, a nitrogen-rich layer on top of the gate insulator, and a gate electrode on the nitrogen-rich layer, wherein the nitrogen-rich layer blocks diffusion of contaminating species from the gate electrode to the gate insulator.Type: ApplicationFiled: May 2, 2003Publication date: October 30, 2003Applicant: International Business Machines CorporationInventors: Douglas Andrew Buchanan, Matthew Warren Copel, Fenton Read McFeely, Patrick Ronald Varekamp, Mark Monroe Banaszak Holl, Kyle Erik Litz
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Publication number: 20030190780Abstract: A method for forming an oxynitride gate dielectric in a semiconductor device and gate dielectric structure formed by the method are disclosed. In the method, an oxynitride layer is first formed on a silicon surface and then re-oxidized with a gas mixture containing oxygen and at least one halogenated species such that an oxynitride layer with a controlled nitrogen profile and a layer of substantially silicon dioxide formed underneath the oxynitride film is obtained. The oxynitride film layer can be formed by either contacting a surface of silicon with at least one gas that contains nitrogen and/or oxygen at a temperature of not less than 500° C. or by a chemical vapor deposition technique. The re-oxidation process may be carried out by a thermal process in an oxidizing halogenated atmosphere containing oxygen and a halogenated species such as HCl, CH2Cl2, C2H3Cl3, C2H2Cl2. CH3Cl and CHCl3.Type: ApplicationFiled: May 22, 2001Publication date: October 9, 2003Applicant: International Business Machines CorporationInventors: Douglas Andrew Buchanan, Matthew Warren Copel, Patrick Ronald Varekamp
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Publication number: 20030190821Abstract: The present invention discloses a method for forming a layer of nitrogen and silicon containing material on a substrate by first providing a heated substrate and then flowing a gas which has silicon and nitrogen atoms but no carbon atoms in the same molecule over said heated substrate at a pressure of not higher than 500 Torr, such that a layer of nitrogen and silicon containing material is formed on the surface. The present invention is further directed to a composite structure that includes a substrate and a layer of material containing nitrogen and silicon but not carbon overlying the substrate for stopping chemical species from reaching the substrate. The present invention is further directed to a structure that includes a semiconducting substrate, a gate insulator on the substrate, a nitrogen-rich layer on top of the gate insulator, and a gate electrode on the nitrogen-rich layer, wherein the nitrogen-rich layer blocks diffusion of contaminating species from the gate electrode to the gate insulator.Type: ApplicationFiled: May 2, 2003Publication date: October 9, 2003Applicant: International Business Machines CorporationInventors: Douglas Andrew Buchanan, Matthew Warren Copel, Fenton Read McFeely, Patrick Ronald Varekamp, Mark Monroe Banaszak Holl, Kyle Erik Litz
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Patent number: 6566281Abstract: The present invention discloses a method for forming a layer of nitrogen and silicon containing material on a substrate by first providing a heated substrate and then flowing a gas which has silicon and nitrogen atoms but no carbon atoms in the same molecule over said heated substrate at a pressure of not higher than 500 Torr, such that a layer of nitrogen and silicon containing material is formed on the surface. The present invention is further directed to a composite structure that includes a substrate and a layer of material containing nitrogen and silicon but not carbon overlying the substrate for stopping chemical species from reaching the substrate. The present invention is further directed to a structure that includes a semiconducting substrate, a gate insulator on the substrate, a nitrogen-rich layer on top of the gate insulator, and a gate electrode on the nitrogen-rich layer, wherein the nitrogen-rich layer blocks diffusion of contaminating species from the gate electrode to the gate insulator.Type: GrantFiled: December 1, 1997Date of Patent: May 20, 2003Assignee: International Business Machines CorporationInventors: Douglas Andrew Buchanan, Matthew Warren Copel, Fenton Read McFeely, Patrick Ronald Varekamp, Mark Monroe Banaszak Holl, Kyle Erik Litz
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Publication number: 20030008520Abstract: A method (and resultant structure) of forming a semiconductor structure, includes forming a mixed rare earth oxide on silicon. The mixed rare earth oxide is lattice-matched to silicon.Type: ApplicationFiled: July 5, 2001Publication date: January 9, 2003Applicant: International Business Machines CorporationInventors: Nestor Alexander Bojarczuk, Douglas Andrew Buchanan, Supratik Guha, Vijay Narayanan, Lars-Ake Ragnarsson
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Patent number: 6245616Abstract: A method for forming an oxynitride gate dielectric in a semiconductor device and gate dielectric structure formed by the method are disclosed. In the method, an oxynitride layer is first formed on a silicon surface and then re-oxidized with a gas mixture containing oxygen and at least one halogenated species such that an oxynitride layer with a controlled nitrogen profile and a layer of substantially silicon dioxide formed underneath the oxynitride film is obtained. The oxynitride film layer can be formed by either contacting a surface of silicon with at least one gas that contains nitrogen and/or oxygen at a temperature of not less than 500° C. or by a chemical vapor deposition technique. The re-oxidation process may be carried out by a thermal process in an oxidizing halogenated atmosphere containing oxygen and a halogenated species such as HCl, CH2Cl2, C2H3Cl3, C2H2Cl2, CH3Cl and CHCl3.Type: GrantFiled: January 6, 1999Date of Patent: June 12, 2001Assignee: International Business Machines CorporationInventors: Douglas Andrew Buchanan, Matthew Warren Copel, Patrick Ronald Varekamp
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Patent number: 6091122Abstract: A method of fabricating a mid-gap workfunction tungsten gate or W electrode directly onto a gate dielectric material for use in high speed/high density advanced MOS and CMOS devices is provided which utilizes low temperature/low pressure CVD of a tungsten carbonyl. MOS and CMOS devices containing one or more of the CVD W gates or W electrodes manufactured by the present invention are also provided herein.Type: GrantFiled: February 10, 1998Date of Patent: July 18, 2000Assignee: International Business Machines CorporationInventors: Douglas Andrew Buchanan, Fenton Read McFeely, John Jacob Yurkas
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Patent number: 5789312Abstract: A method of fabricating a mid-gap workfunction tungsten gate or W electrode directly onto a gate dielectric material for use in high speed/high density advanced MOS and CMOS devices is provided which utilizes low temperature/low pressure CVD of a tungsten carbonyl. MOS and CMOS devices containing one or more of the CVD W gates or W electrodes manufactured by the present invention are also provided herein.Type: GrantFiled: October 30, 1996Date of Patent: August 4, 1998Assignee: International Business Machines CorporationInventors: Douglas Andrew Buchanan, Fenton Read McFeely, John Jacob Yurkas