Patents by Inventor Douglas Arthur Buchberger
Douglas Arthur Buchberger has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11955333Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method includes supplying a vaporized precursor into a processing volume, supplying activated elements including ions and radicals from a remote plasma source, energizing the activated elements using RF source power at a first duty cycle to react with the vaporized precursor to deposit an SiNHx film onto a substrate disposed in the processing volume, supplying a first process gas from the remote plasma source while providing RF bias power at a second duty cycle different from the first duty cycle to the substrate support to convert the SiNHx film to an SiOx film, supplying a process gas mixture formed from a second process gas supplied from the remote plasma source and a third process gas supplied from the gas supply while providing RF bias power at the second duty cycle to the substrate support, and annealing the substrate.Type: GrantFiled: March 22, 2021Date of Patent: April 9, 2024Assignee: APPLIED MATERIALS, INC.Inventors: Jethro Tannos, Bhargav Sridhar Citla, Srinivas D. Nemani, Ellie Yieh, Joshua Alan Rubnitz, Erica Chen, Soham Sunjay Asrani, Nikolaos Bekiaris, Douglas Arthur Buchberger, Jr.
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Publication number: 20220319896Abstract: Embodiments of substrate supports are provided herein. In some embodiments, a substrate support for use in a chemical vapor deposition (CVD) chamber includes: a pedestal to support a substrate, wherein the pedestal includes a dielectric plate coupled to a pedestal body; a rotary union coupled to the pedestal, wherein the rotary union includes a stationary housing disposed about a rotor; a drive assembly coupled to the rotary union; a coolant union coupled to the rotary union and having a coolant inlet fluidly coupled to coolant channels disposed in the pedestal via a coolant line; an RF rotary joint coupled to the coolant union and having an RF connector configured to couple the pedestal to an RF bias power source; and an RF conduit that extends from the RF connector to the pedestal through a central opening of the pedestal body to provide RF bias to the pedestal.Type: ApplicationFiled: April 2, 2021Publication date: October 6, 2022Inventors: Qiwei LIANG, Douglas Arthur BUCHBERGER, Jr., Gautam PISHARODY, Dmitry LUBOMIRSKY, Shekhar ATHANI
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Publication number: 20220298636Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate comprises supplying a vaporized silicon containing precursor from a gas supply into a processing volume of a processing chamber, supplying a first process gas from the gas supply into the processing volume, energizing the first process gas using RF source power at a first duty cycle to react with the vaporized silicon containing precursor, and supplying a process gas mixture from the gas supply while providing RF bias power at a second duty cycle different from the first duty cycle to a substrate support disposed in the processing volume to deposit a SiHx film onto a substrate supported on the substrate support.Type: ApplicationFiled: March 22, 2021Publication date: September 22, 2022Inventors: Soham Sunjay ASRANI, Joshua Alan RUBNITZ, Bhargav Sridhar CITLA, Srinivas D. NEMANI, Erica CHEN, Nikolaos BEKIARIS, Douglas Arthur BUCHBERGER, JR., Jethro TANNOS, Ellie YIEH
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Publication number: 20220301867Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method includes supplying a vaporized precursor into a processing volume, supplying activated elements including ions and radicals from a remote plasma source, energizing the activated elements using RF source power at a first duty cycle to react with the vaporized precursor to deposit an SiNHx film onto a substrate disposed in the processing volume, supplying a first process gas from the remote plasma source while providing RF bias power at a second duty cycle different from the first duty cycle to the substrate support to convert the SiNHx film to an SiOx film, supplying a process gas mixture formed from a second process gas supplied from the remote plasma source and a third process gas supplied from the gas supply while providing RF bias power at the second duty cycle to the substrate support, and annealing the substrate.Type: ApplicationFiled: March 22, 2021Publication date: September 22, 2022Inventors: Jethro TANNOS, Bhargav Sridhar CITLA, Srinivas D. NEMANI, Ellie YIEH, Joshua Alan RUBNITZ, Erica CHEN, Soham Sunjay ASRANI, Nikolaos BEKIARIS, Douglas Arthur BUCHBERGER, JR.
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Patent number: 8074677Abstract: A method and apparatus for delivering gases to a semiconductor processing system are provided. In one embodiment, an apparatus for delivering gases to a semiconductor processing system includes a plurality of gas input and output lines having inlet and outlet ports. Connecting lines couple respective pairs of the gas input and gas output lines. Connecting valves are arranged to control flow through the respective connecting lines. Mass gas flow controllers are arranged to control flow into respective inlet ports. In another embodiment, a method includes providing a manifold having at least a plurality of inlet that may be selectively coupled to at least one of a plurality of outlets, flowing one or more gases through the manifold to a vacuum environment by-passing the processing chamber prior to processing or to a calibration circuit, and flowing the one or more gases into the processing chamber during substrate processing.Type: GrantFiled: February 26, 2007Date of Patent: December 13, 2011Assignee: Applied Materials, Inc.Inventors: Ezra Robert Gold, Richard Charles Fovell, James Patrick Cruse, Jared Ahmad Lee, Bruno Geoffrion, Douglas Arthur Buchberger, Martin J. Salinas
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Patent number: 7846497Abstract: A method and apparatus for delivering gases to a semiconductor processing system are provided. In one embodiment, an apparatus for delivering gases to a semiconductor processing system includes a plurality of gas input and output lines having inlet and outlet ports. Connecting lines couple respective pairs of the gas input and gas output lines. Connecting valves are arranged to control flow through the respective connecting lines. Mass gas flow controllers are arranged to control flow into respective inlet ports. In another embodiment, a method includes providing a manifold having at least a plurality of inlet that may be selectively coupled to at least one of a plurality of outlets, flowing one or more gases through the manifold to a vacuum environment by-passing the processing chamber prior to processing or to a calibration circuit, and flowing the one or more gases into the processing chamber during substrate processing.Type: GrantFiled: February 26, 2007Date of Patent: December 7, 2010Assignee: Applied Materials, Inc.Inventors: Ezra Robert Gold, Richard Charles Fovell, James Patrick Cruse, Jared Ahmad Lee, Bruno Geoffrion, Douglas Arthur Buchberger, Martin J. Salinas
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Patent number: 7775236Abstract: A method and apparatus for delivering gases to a semiconductor processing system are provided. In one embodiment, an apparatus for delivering gases to a semiconductor processing system includes a plurality of gas input and output lines having inlet and outlet ports. Connecting lines couple respective pairs of the gas input and gas output lines. Connecting valves are arranged to control flow through the respective connecting lines. Mass gas flow controllers are arranged to control flow into respective inlet ports. In another embodiment, a method includes providing a manifold having at least a plurality of inlet that may be selectively coupled to at least one of a plurality of outlets, flowing one or more gases through the manifold to a vacuum environment by-passing the processing chamber prior to processing or to a calibration circuit, and flowing the one or more gases into the processing chamber during substrate processing.Type: GrantFiled: February 26, 2007Date of Patent: August 17, 2010Assignee: Applied Materials, Inc.Inventors: Ezra Robert Gold, Richard Charles Fovell, James Patrick Cruse, Jared Ahmad Lee, Bruno Geoffrion, Douglas Arthur Buchberger, Martin J. Salinas
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Publication number: 20080202588Abstract: A method and apparatus for delivering gases to a semiconductor processing system are provided. In one embodiment, an apparatus for delivering gases to a semiconductor processing system includes a plurality of gas input and output lines having inlet and outlet ports. Connecting lines couple respective pairs of the gas input and gas output lines. Connecting valves are arranged to control flow through the respective connecting lines. Mass gas flow controllers are arranged to control flow into respective inlet ports. In another embodiment, a method includes providing a manifold having at least a plurality of inlet that may be selectively coupled to at least one of a plurality of outlets, flowing one or more gases through the manifold to a vacuum environment by-passing the processing chamber prior to processing or to a calibration circuit, and flowing the one or more gases into the processing chamber during substrate processing.Type: ApplicationFiled: February 26, 2007Publication date: August 28, 2008Inventors: Ezra Robert Gold, Richard Charles Fovell, James Patrick Cruse, Jared Ahmad Lee, Bruno Geoffrion, Douglas Arthur Buchberger, Martin J. Salinas
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Publication number: 20080202610Abstract: A method and apparatus for delivering gases to a semiconductor processing system are provided. In one embodiment, an apparatus for delivering gases to a semiconductor processing system includes a plurality of gas input and output lines having inlet and outlet ports. Connecting lines couple respective pairs of the gas input and gas output lines. Connecting valves are arranged to control flow through the respective connecting lines. Mass gas flow controllers are arranged to control flow into respective inlet ports. In another embodiment, a method includes providing a manifold having at least a plurality of inlet that may be selectively coupled to at least one of a plurality of outlets, flowing one or more gases through the manifold to a vacuum environment by-passing the processing chamber prior to processing or to a calibration circuit, and flowing the one or more gases into the processing chamber during substrate processing.Type: ApplicationFiled: February 26, 2007Publication date: August 28, 2008Inventors: Ezra Robert Gold, Richard Charles Fovell, James Patrick Cruse, Jared Ahmad Lee, Bruno Geoffrion, Douglas Arthur Buchberger, Martin J. Salinas
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Publication number: 20080202609Abstract: A method and apparatus for delivering gases to a semiconductor processing system are provided. In one embodiment, an apparatus for delivering gases to a semiconductor processing system includes a plurality of gas input and output lines having inlet and outlet ports. Connecting lines couple respective pairs of the gas input and gas output lines. Connecting valves are arranged to control flow through the respective connecting lines. Mass gas flow controllers are arranged to control flow into respective inlet ports. In another embodiment, a method includes providing a manifold having at least a plurality of inlet that may be selectively coupled to at least one of a plurality of outlets, flowing one or more gases through the manifold to a vacuum environment by-passing the processing chamber prior to processing or to a calibration circuit, and flowing the one or more gases into the processing chamber during substrate processing.Type: ApplicationFiled: February 26, 2007Publication date: August 28, 2008Inventors: EZRA ROBERT GOLD, Richard Charles Fovell, James Patrick Cruse, Jared Ahmad Lee, Bruno Geoffrion, Douglas Arthur Buchberger, Martin J. Salinas