Abstract: A twin cell architecture for dynamic random access memory (DRAM) devices and those devices incorporating embedded DRAM utilizing an open bitline configuration is disclosed. The twin cell architecture disclosed has significant advantages over conventional designs in terms of power, radiation hardness and speed and does not require intermediate supply voltage bitline precharge while allowing for 6F2 memory cell layouts.

Abstract: A switched capacitor charge sharing technique for integrated circuit devices which allows for efficient charge sharing and signal level generation of exact desired values, and wherein the signal levels of the circuits sharing the charge do not have to have the same voltage levels. In a particular embodiment of the technique of the present invention disclosed herein, a switched capacitor is used to share charge between, for example, two different signals or two different groups of signals. The size of the capacitor can be adjusted to obtain the required signal level of the various signals.

Abstract: A DRAM refresh period adjustment technique based on the retention time of one or more unused memory cell(s) having characteristics very similar to the characteristics of the memory cell(s) with the shortest retention time used in the DRAM array. In a particular implementation of the technique of the present invention, the refresh period of a DRAM array is adjusted through the use of one or more of the DRAM bits that fail to meet the retention time requirement and have, therefore, been replaced by redundant DRAM bits. These replaced bits are then used to indicate the refresh period for the DRAM is the maximum it can be for the DRAM under then current operating conditions.

Abstract: A switched capacitor charge sharing technique for integrated circuit devices which allows for efficient charge sharing and signal level generation of exact desired values, and wherein the signal levels of the circuits sharing the charge do not have to have the same voltage levels. In a particular embodiment of the technique of the present invention disclosed herein, a switched capacitor is used to share charge between, for example, two different signals or two different groups of signals. The size of the capacitor can be adjusted to obtain the required signal level of the various signals.

Abstract: A DRAM refresh period adjustment technique based on the retention time of one or more unused memory cell(s) having characteristics very similar to the characteristics of the memory cell(s) with the shortest retention time used in the DRAM array. In a particular implementation of the technique of the present invention, the refresh period of a DRAM array is adjusted through the use of one or more of the DRAM bits that fail to meet the retention time requirement and have, therefore, been replaced by redundant DRAM bits. These replaced bits are then used to indicate the refresh period for the DRAM is the maximum it can be for the DRAM under then current operating conditions.

Abstract: A multi-chip integrated circuit, and an associated method, provides an interface of substantially reduced levels of capacitance and inductance relative to conventional connections formed of bond wires. One of the chips of the integrated circuits comprises a memory device, such as a DRAM, and another of the chips of the integrated circuit is formed of a logic chip, such as a CPU or graphics controller. The memory chip is mounted upon the logic chip utilizing chip-on-chip technology. Because of the reduced levels of capacitance and inductance of the interface connecting the chips together, the resultant integrated circuit can be operated at increased speeds and at reduced levels of power consumption.

Abstract: A multi-chip integrated circuit, and an associated method, provides an interface of substantially reduced levels of capacitance and inductance relative to conventional connections formed of bond wires. One of the chips of the integrated circuits comprises a memory device, such as a DRAM, and another of the chips of the integrated circuit is formed of a logic chip, such as a CPU or graphics controller. The memory chip is mounted upon the logic chip utilizing chip-on-chip technology. Because of the reduced levels of capacitance and inductance of the interface connecting the chips together, the resultant integrated circuit can be operated at increased speeds and at reduced levels of power consumption.

Abstract: A delayed start oscillator includes an oscillator enable signal having first and second states thereof for selectively enabling and disabling the oscillator respectively. An oscillator output signal has first and second levels thereof responsive to the first state of the oscillator enable signal for providing an oscillator output signal. A timing circuit is coupled to a supply voltage line for providing a timing signal output indicative of a selected delayed start duration and a plurality of series connected inverting stages are coupled to receive the oscillator output signal and the timing signal. The oscillator output signal remains at a first level for the delayed start duration in response to the timing signal and subsequently transitions between the first and second levels at an operational frequency determined by the plurality of inverting stages until the oscillator enable signal transitions to the second state thereof.

Abstract: A planarized integrated circuit and method for making it are disclosed. The method includes forming portions of a transistor structure that extend to an elevation on an integrated circuit substrate above intermediate regions above the substrate. The portions have an oxide layer on their top surfaces. A layer of polysilicon is formed overall, including in the intermediate regions, to a depth in the intermediate regions larger than the elevation to which the portions of the transistor structure extend. A chemical-mechanical-polishing step is performed on the polysilicon overall to a depth at least extending to the oxide layer on the transistor portions to create a first planarized surface. In subsequent processing, a layer of oxide may be formed over the planarized surface, with source/drain extension regions patterned in the layer of oxide and underlying structures to the surface of the substrate.

Abstract: A circuit and method for concurrently addressing at least two rows of memory cells of a memory array of a memory device. By concurrently addressing at least two rows of memory cells during testing of the memory device during a burn-in period, the memory device can be tested in a reduced time period.

Abstract: A reference voltage generator which compensates for temperature and V.sub.CC variations includes a constant current source and a MOS P-channel transistor. The constant current source provides a constant current over a wide range of V.sub.CC that corresponds to biasing a p-channel transistor in a region where its resistance is constant. The output of the current source is supplied to the P-channel transistor, which is in saturation. The constant current provides a constant voltage drop across the P-channel transistor. Hence, a stable reference voltage is generated. Temperature compensation is provided by biasing the P-channel transistor to saturation and supplying a constant current that the corresponds to biasing a p-channel transistor where the resistance is substantially constant over a temperature range. The current causes a voltage drop across the P-channel transistor to maintain a stable reference voltage.

Abstract: In a multi-layered integrated memory circuit, a method for using sacrificial layers and insulating "sticks" is disclosed to provide a contact between two layers, where the contact does not short to an intervening layer. This invention provides this with minimal extra processing by using sacrificial layers with appropriate etch and etch stop properties. As these layers are etched, additional layers which alternate in the same conducting/insulating pattern are exposed. Each etch stops on either a conductive or insulative layer. A contact layer may then be deposited which connects the uppermost capacitor plate to the pass transistor of the memory cell.

Abstract: In a multi-layered integrated memory circuit, a method for using sacrificial layers and insulating "sticks" is disclosed to provide a contact between two layers, where the contact does not short to an intervening layer. This invention provides this with minimal extra processing by using sacrificial layers with appropriate etch and etch stop properties. As these layers are etched, additional layers which alternate in the same conducting/insulating pattern are exposed. Each etch stops on either a conductive or insulative layer. A contact layer may then be deposited which connects the uppermost capacitor plate to the pass transistor of the memory cell.

Abstract: A trench capacitor which has a plurality of capacitor plates separated by a dielectric within a trench on a substrate. A plate located closest to the wall of the trench may be a field shield and tied everywhere to ground. The other plate may be polysilicon. Said other plate may be tied to a source of variable potential. A plurality of sacrificial layers are established over the structure and the structure thus formed is then patterened and etched. A pass transistor is formed adjacent to the trench capacitor, and a connecting layer is established connecting the other plate of the trench capacitor to the source/drain region of the pass transistor. The connecting layer makes electrical contact to the other capacitor plate and source/drain of the pass transistor and is insulated from other layers in the capacitor and pass transistor. Bit lines and word lines can then be added, as known in the art.

Abstract: An improved process in making a polysilicon resistor suitable for use as a load resistor in a static memory wherein after the doping of the polysilicon, the device is annealed by exposing it to a rapid increase of ambient temperature (up to between 900 and 1200.degree. C.), maintaining the high ambient temperature for a controlled time (about 5 seconds) and then lowering the ambient tempertature at a rapid rate. This decreases resistances by one order of magnitude and significantly decreases the temperature activation energy of the resistor. This permits static memory cells to retain data even though the cell has high leakage currents, thereby improving final test yields.

Abstract: An improved process in making a polysilicon resistor suitable for use as a load resistor in a static memory wherein after the doping of the polysilicon, the device is annealed by exposing it to a rapid increase of ambient temperature (up to between 900.degree. and 1200.degree. C.), maintaining the high ambient temperature for a controlled time (about 5 seconds) and then lowering the ambient temperature at a rapid rate. This decreases resistance by one order of magnitude and significantly decreases the temperature activation energy of the resistor. This permits static memory cells to retain data even though the cell has high leakage currents, thereby improving final test yields.

Abstract: A method for fabricating a field-effect transistor device is provided with the device resulting having a relatively substantial capability to withstand reverse bias voltages. The device can also be provided having a relatively low "on" condition resistance between the source and drain terminals thereof by virtue of a geometrical design choice.