Patents by Inventor Douglas Buchberger

Douglas Buchberger has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8617351
    Abstract: A plasma reactor for processing a workpiece, includes a vacuum chamber defined by a sidewall and ceiling, and a workpiece support pedestal having a workpiece support surface in the chamber and facing the ceiling and including a cathode electrode. An RF power generator is coupled to the cathode electrode. Plasma distribution is controlled by an external annular inner electromagnet in a first plane overlying the workpiece support surface, an external annular outer electromagnet in a second plane overlying the workpiece support surface and having a greater diameter than the inner electromagnet, and an external annular bottom electromagnet in a third plane underlying the workpiece support surface. D.C. current supplies are connected to respective ones of the inner, outer and bottom electromagnets.
    Type: Grant
    Filed: January 28, 2005
    Date of Patent: December 31, 2013
    Assignee: Applied Materials, Inc.
    Inventors: Daniel J. Hoffman, Roger A. Lindley, Michael C. Kutney, Martin J. Salinas, Hamid F. Tavassoli, Keiji Horioka, Douglas A. Buchberger, Jr.
  • Patent number: 8608900
    Abstract: A plasma reactor having a reactor chamber and an electrostatic chuck with a surface for holding a workpiece inside the chamber includes a backside gas pressure source coupled to the electrostatic chuck for applying a thermally conductive gas under a selected pressure into a workpiece-surface interface formed whenever a workpiece is held on the surface and an evaporator inside the electrostatic chuck and a refrigeration loop having an expansion valve for controlling flow of coolant through the evaporator. The reactor further includes a temperature sensor in the electrostatic chuck and a memory storing a schedule of changes in RF power or wafer temperature.
    Type: Grant
    Filed: April 21, 2006
    Date of Patent: December 17, 2013
    Assignees: B/E Aerospace, Inc., Applied Materials, Inc.
    Inventors: Douglas A. Buchberger, Jr., Paul Lukas Brillhart, Richard Fovell, Hamid Tavassoli, Douglas H. Burns, Kallol Bera, Daniel J. Hoffman
  • Patent number: 8607731
    Abstract: An apparatus for generating uniform plasma across and beyond the peripheral edge of a substrate has a dielectric body with an upper electrode and an annular electrode embedded therein. The outer perimeter of the upper electrode overlaps the inner perimeter of the annular electrode. In one embodiment, the upper electrode and the annular electrode are electrically coupled by molybdenum vias. In one embodiment, the upper electrode is coupled to a DC power source to provide electrostatic force for chucking the substrate. In one embodiment, the upper electrode is coupled to an RF source for exciting one or more processing gasses into plasma for substrate processing.
    Type: Grant
    Filed: June 23, 2008
    Date of Patent: December 17, 2013
    Assignee: Applied Materials, Inc.
    Inventors: Daniel J. Hoffman, Douglas A. Buchberger, Jr., Semyon L. Kats, Dan Katz
  • Publication number: 20130284372
    Abstract: Embodiments include a base for an electrostatic chuck (ESC) assembly for supporting a workpiece during a manufacturing operation in a processing chamber, such as a plasma etch, clean, deposition system, or the like. Inner and outer fluid conduits are disposed in the base to conduct a heat transfer fluid. In embodiments, a counter-flow conduit configuration provides improved temperature uniformity. The conduit segments in each zone are interlaced so that fluid flows are in opposite directions in radially adjacent segments. In embodiments, each separate fluid conduit formed in the base comprises a channel formed in the base with a cap e-beam welded to a recessed lip of the channel to make a sealed conduit. To further improve the thermal uniformity, a compact, tri-fold channel segment is employed in each of the outer fluid loops. In further embodiments, the base includes a multi-contact fitting RF and DC connection, and thermal breaks.
    Type: Application
    Filed: April 10, 2013
    Publication date: October 31, 2013
    Inventors: Hamid TAVASSOLI, Kallol BERA, Douglas BUCHBERGER, James C. CARDUCCI, Shahid RAUF, Ken COLLINS
  • Publication number: 20130277333
    Abstract: In a plasma reactor having a driven electrode and a counter electrode, an impedance controller connected between the counter electrode and ground includes both series sand parallel variable impedance elements that facilitate two-dimensional movement of a ground path input impedance in a complex impedance space to control spatial distribution of a plasma process parameter.
    Type: Application
    Filed: March 15, 2013
    Publication date: October 24, 2013
    Inventors: Nipun Misra, Kartik Ramaswamy, Yang Yang, Douglas A. Buchberger, JR., James D. Carducci, Lawrence Wong, Shane C. Nevil, Shahid Rauf, Kenneth S. Collins
  • Publication number: 20130279066
    Abstract: Electrostatic chucks (ESCs) with RF and temperature uniformity are described. For example, an ESC includes a top dielectric layer. An upper metal portion is disposed below the top dielectric layer. A second dielectric layer is disposed above a plurality of pixilated resistive heaters and surrounded in part by the upper metal portion. A third dielectric layer is disposed below the second dielectric layer, with a boundary between the third dielectric layer and the second dielectric layer. A plurality of vias is disposed in the third dielectric layer. A bus power bar distribution layer is disposed below and coupled to the plurality of vias. A fourth dielectric layer is disposed below the bus bar power distribution layer, with a boundary between the fourth dielectric layer and the third dielectric layer. A metal base is disposed below the fourth dielectric layer. The metal base includes a plurality of high power heater elements housed therein.
    Type: Application
    Filed: April 22, 2013
    Publication date: October 24, 2013
    Inventors: Dmitry Lubomirsky, Jennifer Y. Sun, Mark Markovsky, Konstantin Makhratchev, Douglas A. Buchberger, JR., Samer Banna
  • Patent number: 8546267
    Abstract: A method of controlling wafer temperature in a plasma reactor by obtaining the next scheduled change in RF heat load on the workpiece, and using thermal modeling to estimate respective changes in wafer backside gas pressure and in coolant flow through a wafer support pedestal that would compensate for the next scheduled change in RF heat load, and making the respective changes in the backside gas pressure or in the coolant flow prior to the time of the next scheduled change.
    Type: Grant
    Filed: November 24, 2010
    Date of Patent: October 1, 2013
    Assignees: B/E Aerospace, Inc., Applied Materials, Inc.
    Inventors: Paul Lukas Brillhart, Richard Fovell, Douglas A. Buchberger, Jr., Douglas H. Burns, Kallol Bera, Daniel J. Hoffman, Kenneth W. Cowans, William W. Cowans, Glenn W. Zubillaga, Isaac Millan
  • Publication number: 20130240144
    Abstract: A plasma processing apparatus and method to control a temperature of a chamber component therein. A process chamber may include a temperature controlled chamber component and at least one remote heat transfer fluid loop comprising a first heat exchanger having a primary side in fluid communication with a heat sink or heat source, and a local heat transfer fluid loop placing the chamber component in fluid communication with a secondary side of the first heat exchanger. The local loop may be of significantly smaller fluid volume than the remote loop(s) and circulated to provide thermal load of uniform temperature. Temperature control of heat transfer fluid in the local loop and temperature control of the chamber component may be implemented with a cascaded control algorithm.
    Type: Application
    Filed: March 13, 2012
    Publication date: September 19, 2013
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Douglas A. Buchberger, Shane Nevil, Kartik Ramaswamy, Kenneth Collins, Richard Fovell
  • Publication number: 20130087286
    Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.
    Type: Application
    Filed: September 27, 2012
    Publication date: April 11, 2013
    Applicant: Applied Materials, Inc.
    Inventors: James D. Carducci, Hamid Tavassoli, Ajit Balakrishna, Zhigang Chen, Andrew Nguyen, Douglas A. Buchberger, JR., Kartik Ramaswamy, Shahid Rauf, Kenneth S. Collins
  • Patent number: 8337660
    Abstract: A plasma reactor for processing a workpiece includes a reactor chamber, an electrostatic chuck within the chamber having a top surface for supporting a workpiece and having indentations in the top surface that form enclosed gas flow channels whenever covered by a workpiece resting on the top surface. The reactor further includes thermal control apparatus thermally coupled to the electrostatic chuck, an RF plasma bias power generator coupled to apply RF power to the electrostatic chuck, a pressurized gas supply of a thermally conductive gas, a controllable gas valve coupling the pressurized gas supply to the indentations to facilitate filling the channels with the thermally conductive gas for heat transfer between a backside of a workpiece and the electrostatic chuck at a heat transfer rate that is a function of the pressure against the backside of the workpiece of the thermally conductive gas.
    Type: Grant
    Filed: August 12, 2010
    Date of Patent: December 25, 2012
    Assignee: B/E Aerospace, Inc.
    Inventors: Douglas A. Buchberger, Jr., Paul Lukas Brillhart, Richard Fovell, Hamid Tavassoli, Douglas H. Burns, Kallol Bera, Daniel J. Hoffman, Kenneth W. Cowans, William W. Cowans, Glenn W. Zubillaga, Isaac Millan
  • Patent number: 8329586
    Abstract: A method of processing a workpiece in a plasma reactor having an electrostatic chuck for supporting the workpiece within a reactor chamber, the method including circulating a coolant through a refrigeration loop that includes an evaporator inside the electrostatic chuck, while pressurizing a workpiece-to-chuck interface with a thermally conductive gas, sensing conditions in the chamber including temperature near the workpiece and simulating heat flow through the electrostatic chuck in a thermal model of the chuck based upon the conditions.
    Type: Grant
    Filed: November 18, 2010
    Date of Patent: December 11, 2012
    Assignees: Applied Materials, Inc., B/E Aerospace, Inc.
    Inventors: Douglas A. Buchberger, Jr., Paul Lukas Brillhart, Richard Fovell, Douglas H. Burns, Kallol Bera, Daniel J. Hoffman, Kenneth W. Cowans, William W. Cowans, Glenn W. Zubillaga, Isaac Millan
  • Patent number: 8270141
    Abstract: Embodiments of electrostatic chucks are provided herein. In some embodiments, an electrostatic chuck may include a body having a notched upper peripheral edge, defined by a first surface perpendicular to a body sidewall and a stepped second surface disposed between the first surface and a body upper surface, and a plurality of holes disposed through the body along the first surface; a plurality of fasteners disposed through the plurality of holes to couple the body to a base disposed beneath the body; a dielectric member disposed above the body upper surface to electrostatically retain a substrate; an insulator ring disposed about the body within the notched upper peripheral edge and having a stepped inner sidewall that mates with the stepped second surface to define a non-linear interface therebetween; and an edge ring disposed over the insulator ring, the non-linear interface limiting arcing between the edge ring and the fastener.
    Type: Grant
    Filed: September 17, 2010
    Date of Patent: September 18, 2012
    Assignee: Applied Materials, Inc.
    Inventors: Michael D. Willwerth, David Palagashvili, Douglas A. Buchberger, Jr., Michael G. Chafin
  • Publication number: 20120199071
    Abstract: Embodiments described herein relate to a plasma chamber and processing system utilizing robust components. In one embodiment, a chamber is provided. The chamber includes a body having an interior volume, a gas distribution assembly disposed in the interior volume opposing a substrate support, the gas distribution assembly having a coolant channel disposed thereon, and a first hollow conduit and a second hollow conduit coupled to the body and in fluid communication with the interior volume.
    Type: Application
    Filed: April 13, 2012
    Publication date: August 9, 2012
    Applicant: Applied Materials, Inc.
    Inventors: KENNETH S. COLLINS, Andrew N. Nguyen, Kartik Ramaswamy, Hiroji Hanawa, Douglas A. Buchberger, JR., Daniel J. Hoffman, Amir Al-Bayati
  • Patent number: 8221580
    Abstract: A plasma reactor with a reactor chamber and an electrostatic chuck having a surface for holding a workpiece inside the chamber includes a backside gas pressure source coupled to the electrostatic chuck for applying a thermally conductive gas under a selected pressure into a workpiece-surface interface formed whenever a workpiece is held on the surface, and an evaporator inside the electrostatic chuck and a refrigeration loop having an expansion valve for controlling flow of coolant through the evaporator. The reactor further includes a temperature sensor in the electrostatic chuck, a thermal model capable of simulating heat transfer between the evaporator and the surface based upon measurements from the temperature sensor and an agile control processor coupled to the thermal model and governing the backside gas pressure source in response to predictions from the model of changes in the selected pressure that would bring the temperature measured by the sensor closer to a desired temperature.
    Type: Grant
    Filed: April 21, 2006
    Date of Patent: July 17, 2012
    Assignees: Applied Materials, Inc., BE Aerospace, Inc.
    Inventors: Douglas A. Buchberger, Jr., Paul Lukas Brillhart, Richard Fovell, Hamid Tavassoli, Douglas H. Burns, Kallol Bera, Daniel J. Hoffman, Kenneth W. Cowans, William W. Cowans, Glenn W. Zubillaga, Isaac Millan
  • Publication number: 20120132397
    Abstract: Methods and systems for controlling temperatures in plasma processing chamber via pulsed application of heating power and pulsed application of cooling power. In an embodiment, temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. In further embodiments, fluid levels in each of a hot and cold reservoir coupled to the temperature controlled component are maintained in part by a passive leveling pipe coupling the two reservoirs. In another embodiment, digital heat transfer fluid flow control valves are opened with pulse widths dependent on a heating/cooling duty cycle value and a proportioning cycle having a duration that has been found to provide good temperature control performance.
    Type: Application
    Filed: May 19, 2011
    Publication date: May 31, 2012
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Fernando M. Silveira, Hamid Tavassoli, Xiaoping Zhou, Shane C. Nevil, Douglas A. Buchberger, Brad L. Mays, Tina Tsong, Chetan Mahadeswaraswamy, Yashaswini B. Pattar, Duy D. Nguyen, Walter R. Merry
  • Publication number: 20120097332
    Abstract: Apparatus for processing a substrate is disclosed herein. In some embodiments, a substrate support may include a substrate support having a support surface for supporting a substrate the substrate support having a central axis; a first electrode disposed within the substrate support to provide RF power to a substrate when disposed on the support surface; an inner conductor coupled to the first electrode about a center of a surface of the first electrode opposing the support surface, wherein the inner conductor is tubular and extends from the first electrode parallel to and about the central axis in a direction away from the support surface of the substrate support; an outer conductor disposed about the inner conductor; and an outer dielectric layer disposed between the inner and outer conductors, the outer dielectric layer electrically isolating the outer conductor from the inner conductor. The outer conductor may be coupled to electrical ground.
    Type: Application
    Filed: October 22, 2010
    Publication date: April 26, 2012
    Applicant: APPLIED MATERIALS, INC.
    Inventors: XING LIN, DOUGLAS A. BUCHBERGER, JR., XIAOPING ZHOU, ANDREW NGUYEN, ANCHEL SHEYNER
  • Publication number: 20120091104
    Abstract: An electrostatic chuck assembly including a dielectric layer with a top surface to support a workpiece. A cooling channel base disposed below the dielectric layer includes a plurality of inner fluid conduits disposed beneath an inner portion of the top surface, and a plurality of outer fluid conduits disposed beneath an outer portion of the top surface. A chuck assembly includes a thermal break disposed within the cooling channel base between the inner and outer fluid conduits. A chuck assembly includes a fluid distribution plate disposed below the cooling channel base and the base plate to distribute a heat transfer fluid delivered from a common input to each inner or outer fluid conduit. The branches of the inner input manifold may have substantially equal fluid conductance.
    Type: Application
    Filed: April 6, 2011
    Publication date: April 19, 2012
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Hamid Tavassoli, Surajit KUMAR, Kallol Bera, Xiaoping Zhou, Shane C. Nevil, Douglas A. Buchberger, JR.
  • Publication number: 20120091108
    Abstract: Methods and apparatus for controlling the temperature of a substrate during processing are provided herein. In some embodiments, an apparatus for retaining and controlling substrate temperature may include a puck of dielectric material; an electrode disposed in the puck proximate a surface of the puck upon which a substrate is to be retained; and a plurality of heater elements disposed in the puck and arranged in concentric rings to provide independent temperature control zones.
    Type: Application
    Filed: April 29, 2011
    Publication date: April 19, 2012
    Applicant: APPLIED MATERIALS, INC.
    Inventors: XING LIN, DOUGLAS A. BUCHBERGER, Jr., XIAOPING ZHOU, VALENTIN TODOROW, ANDREW NGUYEN, ANCHEL SHEYNER
  • Patent number: 8157951
    Abstract: A plasma reactor for processing a workpiece includes a reactor chamber, an electrostatic chuck within the chamber having a top surface for supporting a workpiece and having indentations in the top surface that form enclosed gas flow channels whenever covered by a workpiece resting on the top surface. The reactor further includes thermal control apparatus thermally coupled to the electrostatic chuck, an RF plasma bias power generator coupled to apply RF power to the electrostatic chuck, a pressurized gas supply of a thermally conductive gas, a controllable gas valve coupling the pressurized gas supply to the indentations to facilitate filling the channels with the thermally conductive gas for heat transfer between a backside of a workpiece and the electrostatic chuck at a heat transfer rate that is a function of the pressure against the backside of the workpiece of the thermally conductive gas.
    Type: Grant
    Filed: April 21, 2006
    Date of Patent: April 17, 2012
    Assignees: Applied Materials, Inc., Advanced Thermal Sciences Corporation
    Inventors: Douglas A. Buchberger, Jr., Paul Lukas Brillhart, Richard Fovell, Hamid Tavassoli, Douglas H. Burns, Kallol Bera, Daniel J. Hoffman
  • Patent number: 8092639
    Abstract: A plasma reactor having a reactor chamber and an electrostatic chuck with a surface for holding a workpiece inside the chamber includes a backside gas pressure source coupled to the electrostatic chuck for applying a thermally conductive gas under a selected pressure into a workpiece-surface interface formed whenever a workpiece is held on the surface and an evaporator inside the electrostatic chuck and a refrigeration loop having an expansion valve for controlling flow of coolant through the evaporator. The reactor further includes a temperature sensor in the electrostatic chuck and a memory storing a schedule of changes in RF power or wafer temperature.
    Type: Grant
    Filed: August 12, 2010
    Date of Patent: January 10, 2012
    Assignee: Advanced Thermal Sciences Corporation
    Inventors: Douglas A. Buchberger, Jr., Paul Lukas Brillhart, Richard Fovell, Hamid Tavassoli, Douglas H. Burns, Kallol Bera, Daniel J. Hoffman, Kenneth W. Cowans, William W. Cowans, Glenn W. Zubillaga, Isaac Millan