Patents by Inventor Douglas Capson

Douglas Capson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Conductive hard mask for memory device formation
    Patent number: 10741753
    Abstract: Methods, systems, and devices for memory arrays that use a conductive hard mask during formation and, in some cases, operation are described. A hard mask may be used to define features or components during the numerous material formation and removal steps used to create memory cells within a memory array. The hard mask may be an electrically conductive material, some or all of which may be retained during formation. A conductive line may be connected to each memory cell, and because the hard mask used in forming the cell may be conductive, the cell may be operable even if portions of the hard mask remain after formation.
    Type: Grant
    Filed: August 14, 2018
    Date of Patent: August 11, 2020
    Assignee: Micron Technology, Inc.
    Inventors: Michael Bernhardt, Tony Lindenberg, Wenzhe Zhang, Douglas Capson
  • CONDUCTIVE HARD MASK FOR MEMORY DEVICE FORMATION
    Publication number: 20180358549
    Abstract: Methods, systems, and devices for memory arrays that use a conductive hard mask during formation and, in some cases, operation are described. A hard mask may be used to define features or components during the numerous material formation and removal steps used to create memory cells within a memory array. The hard mask may be an electrically conductive material, some or all of which may be retained during formation. A conductive line may be connected to each memory cell, and because the hard mask used in forming the cell may be conductive, the cell may be operable even if portions of the hard mask remain after formation.
    Type: Application
    Filed: August 14, 2018
    Publication date: December 13, 2018
    Inventors: Michael Bernhardt, Tony Lindenberg, Wenzhe Zhang, Douglas Capson
  • Conductive hard mask for memory device formation
    Patent number: 10103326
    Abstract: Methods, systems, and devices for memory arrays that use a conductive hard mask during formation and, in some cases, operation are described. A hard mask may be used to define features or components during the numerous material formation and removal steps used to create memory cells within a memory array. The hard mask may be an electrically conductive material, some or all of which may be retained during formation. A conductive line may be connected to each memory cell, and because the hard mask used in forming the cell may be conductive, the cell may be operable even if portions of the hard mask remain after formation.
    Type: Grant
    Filed: December 27, 2017
    Date of Patent: October 16, 2018
    Assignee: MICRON TECHNOLOGY, INC.
    Inventors: Michael Bernhardt, Tony Lindenberg, Wenzhe Zhang, Douglas Capson
  • CONDUCTIVE HARD MASK FOR MEMORY DEVICE FORMATION
    Publication number: 20180138400
    Abstract: Methods, systems, and devices for memory arrays that use a conductive hard mask during formation and, in some cases, operation are described. A hard mask may be used to define features or components during the numerous material formation and removal steps used to create memory cells within a memory array. The hard mask may be an electrically conductive material, some or all of which may be retained during formation. A conductive line may be connected to each memory cell, and because the hard mask used in forming the cell may be conductive, the cell may be operable even if portions of the hard mask remain after formation.
    Type: Application
    Filed: December 27, 2017
    Publication date: May 17, 2018
    Inventors: Michael Bernhardt, Tony Lindenberg, Wenzhe Zhang, Douglas Capson
  • Conductive hard mask for memory device formation
    Patent number: 9923139
    Abstract: Methods, systems, and devices for memory arrays that use a conductive hard mask during formation and, in some cases, operation are described. A hard mask may be used to define features or components during the numerous material formation and removal steps used to create memory cells within a memory array. The hard mask may be an electrically conductive material, some or all of which may be retained during formation. A conductive line may be connected to each memory cell, and because the hard mask used in forming the cell may be conductive, the cell may be operable even if portions of the hard mask remain after formation.
    Type: Grant
    Filed: March 11, 2016
    Date of Patent: March 20, 2018
    Assignee: MICRON TECHNOLOGY, INC.
    Inventors: Michael Bernhardt, Tony Lindenberg, Wenzhe Zhang, Douglas Capson
  • CONDUCTIVE HARD MASK FOR MEMORY DEVICE FORMATION
    Publication number: 20170263862
    Abstract: Methods, systems, and devices for memory arrays that use a conductive hard mask during formation and, in some cases, operation are described. A hard mask may be used to define features or components during the numerous material formation and removal steps used to create memory cells within a memory array. The hard mask may be an electrically conductive material, some or all of which may be retained during formation. A conductive line may be connected to each memory cell, and because the hard mask used in forming the cell may be conductive, the cell may be operable even if portions of the hard mask remain after formation.
    Type: Application
    Filed: March 11, 2016
    Publication date: September 14, 2017
    Inventors: Michael Bernhardt, Tony Lindenberg, Wenzhe Zhang, Douglas Capson