Patents by Inventor Douglas Cywar

Douglas Cywar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11046794
    Abstract: Silicon containing polyamine scale inhibitors derived from poly(primary amine)s are disclosed. The scale inhibitors can be used to reduce siliceous scale formation in industrial process streams such as alumina recovery process streams, nuclear waste streams and kraft paper mill effluent streams.
    Type: Grant
    Filed: December 15, 2015
    Date of Patent: June 29, 2021
    Assignee: Cytec Industries Inc.
    Inventors: Airong Song, Lei Zhang, Douglas Cywar, Haunn-Lin Tony Chen, Matthew Taylor
  • Publication number: 20160176995
    Abstract: Silicon containing polyamine scale inhibitors derived from poly(primary amine)s are disclosed. The scale inhibitors can be used to reduce siliceous scale formation in industrial process streams such as alumina recovery process streams, nuclear waste streams and kraft paper mill effluent streams.
    Type: Application
    Filed: December 15, 2015
    Publication date: June 23, 2016
    Applicant: Cytec Industries Inc
    Inventors: Airong Song, Lei Zhang, Douglas Cywar, Haunn-Lin Tony Chen, Matthew Taylor
  • Patent number: 5352326
    Abstract: The present invention provides a process for rendering acrylic based negative photoresists resistant to hot alkaline permanganate etchant and the iron chloride etchant and for improving the adhesion of the photoresist to the substrate, yet does not require halogenated reagents to develop or strip the photoresist. It has been discovered that the degradation of acrylic based negative photoresists by the permanganate etchant may be overcome by exposing an imaged acrylic based negative photoresist to select wavelengths of actinic radiation either ultraviolet light that is rich in deep UV, about 254 nm wavelength; or infrared radiation from about 2.4 to about 8 microns. Where UV radiation is used, the photoresist is then baked to reduce undercutting of the photoresist. Thereafter, the photoresist is stripped using nonhalocarbon solvents.
    Type: Grant
    Filed: May 28, 1993
    Date of Patent: October 4, 1994
    Assignee: International Business Machines Corporation
    Inventors: Douglas Cywar, Don H. Hess, Christian Lalonde