Abstract: Methods are provided for fabricating electrochromic devices that mitigate formation of short circuits under a top bus bar without predetermining where top bus bars will be applied on the device. Devices fabricated using such methods may be deactivated under the top bus bar, or may include active material under the top bus bar. Methods of fabricating devices with active material under a top bus bar include depositing a modified top bus bar, fabricating self-healing layers in the electrochromic device, and modifying a top transparent conductive layer of the device prior to applying bus bars.

Abstract: Methods are provided for fabricating electrochromic devices that mitigate formation of short circuits under a top bus bar without predetermining where top bus bars will be applied on the device. Devices fabricated using such methods may be deactivated under the top bus bar, or may include active material under the top bus bar. Methods of fabricating devices with active material under a top bus bar include depositing a modified top bus bar, fabricating self-healing layers in the electrochromic device, and modifying a top transparent conductive layer of the device prior to applying bus bars.

Abstract: Methods for protecting transparent electronically conductive layers on glass substrates are described herein. Methods include depositing a sacrificial coating during deposition of the transparent electronically conductive layer, before packing the glass substrate for storage or shipping, after unpacking glass substrates from a stack of glass substrates, and/or after a washing operation prior to fabricating an electrochromic stack on the transparent electronically conductive layer. Methods also include removing the sacrificial coating during a washing operation, during tempering, or prior to depositing an electrochromic stack by, e.g., heating the sacrificial coating or exposing the sacrificial coating to an inert plasma.

Abstract: Methods for protecting transparent electronically conductive layers on glass substrates are described herein. Methods include depositing a sacrificial coating during deposition of the transparent electronically conductive layer, before packing the glass substrate for storage or shipping, after unpacking glass substrates from a stack of glass substrates, and/or after a washing operation prior to fabricating an electrochromic stack on the transparent electronically conductive layer. Methods also include removing the sacrificial coating during a washing operation, during tempering, or prior to depositing an electrochromic stack by, e.g., heating the sacrificial coating or exposing the sacrificial coating to an inert plasma.

Abstract: Methods are provided for fabricating electrochromic devices that mitigate formation of short circuits under a top bus bar without predetermining where top bus bars will be applied on the device. Devices fabricated using such methods may be deactivated under the top bus bar, or may include active material under the top bus bar. Methods of fabricating devices with active material under a top bus bar include depositing a modified top bus bar, fabricating self-healing layers in the electrochromic device, and modifying a top transparent conductive layer of the device prior to applying bus bars.

Abstract: Methods for protecting transparent electronically conductive layers on glass substrates are described herein. Methods include depositing a sacrificial coating during deposition of the transparent electronically conductive layer, before packing the glass substrate for storage or shipping, after unpacking glass substrates from a stack of glass substrates, and/or after a washing operation prior to fabricating an electrochromic stack on the transparent electronically conductive layer. Methods also include removing the sacrificial coating during a washing operation, during tempering, or prior to depositing an electrochromic stack by, e.g., heating the sacrificial coating or exposing the sacrificial coating to an inert plasma.

Abstract: Methods are provided for fabricating electrochromic devices that mitigate formation of short circuits under a top bus bar without predetermining where top bus bars will be applied on the device. Devices fabricated using such methods may be deactivated under the top bus bar, or may include active material under the top bus bar. Methods of fabricating devices with active material under a top bus bar include depositing a modified top bus bar, fabricating self-healing layers in the electrochromic device, and modifying a top transparent conductive layer of the device prior to applying bus bars.

Abstract: A method and system for real-time, in-line calculations of opto-electronic properties and thickness of the layers of multi-layered transparent conductive oxide stacks of photovoltaic devices is provided. The method and system include taking measurements of each layer of the stack during deposition thereof. The measurements are then used to calculate the opto-electronic properties and thicknesses of the layers in real-time.

Abstract: An apparatus and method for converting an amorphous transparent conductive oxide to a crystalline form with the assistance of irradiation of a laser.

Abstract: A method and system for real-time, in-line calculations of opto-electronic properties and thickness of the layers of multi-layered transparent conductive oxide stacks of photovoltaic devices is provided. The method and system include taking measurements of each layer of the stack during deposition thereof. The measurements are then used to calculate the opto-electronic properties and thicknesses of the layers in real-time.

Abstract: A method for manufacturing a multilayered structure may include forming a transparent conductive oxide layer including cadmium stannate adjacent to a substrate and annealing the structure in an annealing environment including a reducing agent at a temperature greater than 500 degrees C. to crystallize the cadmium stannate.

Abstract: An apparatus and method for converting an amorphous transparent conductive oxide to a crystalline form with the assistance of irradiation of a laser.

Abstract: A structure includes a barrier layer which can include a silicon aluminum oxide, and a transparent conductive oxide layer which can include a layer of cadmium and tin.

Abstract: A multilayered structure including a first barrier layer adjacent to a substrate, a barrier bi-layer adjacent to the first barrier layer, the barrier bi-layer comprising a second barrier layer and a third barrier layer, a transparent conductive oxide layer adjacent to the barrier bi-layer, and a buffer layer adjacent to the transparent conductive oxide layer and method of forming the same. A multilayered substrate including a barrier layer structure having a plurality of barrier layers being alternating layers of low refractive index material and high refractive index material, a transparent conductive oxide layer adjacent to the barrier bi-layer and a buffer layer adjacent to the transparent conductive oxide layer. The multilayered structure may serve as a front contact for photovoltaic devices.

Abstract: A method for manufacturing a multilayered structure may include forming a transparent conductive oxide layer including cadmium stannate adjacent to a substrate and annealing the structure in an annealing environment including a reducing agent at a temperature greater than 500 degrees C. to crystallize the cadmium stannate.

Abstract: A solar cell with a doped transparent conductive oxide layer is disclosed. The doped transparent conductive oxide layer can improve the efficiency of CdTe-based or other kinds of solar cells.