Patents by Inventor Douglas Edward CRAFTS

Douglas Edward CRAFTS has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170243987
    Abstract: A method for use in forming a photovoltaic device includes forming a doped semiconductor layer on a surface of a semiconductor substrate and forming a metal film on the doped semiconductor layer. A patterned etched resist is formed on the metal film and a dielectric layer is formed on the doped semiconductor layer and the etched resist. A laser having a wavelength absorbable by the patterned etch resist is applied through the dielectric layer to the patterned etch resist to remove the patterned etch resist.
    Type: Application
    Filed: May 5, 2017
    Publication date: August 24, 2017
    Applicant: TETRASUN, INC.
    Inventors: Adrian Bruce TURNER, Bonneville Dudgeon EGGLESTON, Oliver SCHULTZ-WITTMAN, Douglas Edward CRAFTS
  • Patent number: 9673341
    Abstract: A method for use in forming a photovoltaic device includes forming a doped semiconductor layer on a surface of a semiconductor substrate and forming a metal film on the doped semiconductor layer. A patterned etched resist is formed on the metal film and a dielectric layer is formed on the doped semiconductor layer and the etched resist. A laser having a wavelength absorbable by the patterned etch resist is applied through the dielectric layer to the patterned etch resist to remove the patterned etch resist.
    Type: Grant
    Filed: May 8, 2015
    Date of Patent: June 6, 2017
    Assignee: TETRASUN, INC.
    Inventors: Adrian Bruce Turner, Bonneville Dudgeon Eggleston, Oliver Schultz-Wittmann, Douglas Edward Crafts
  • Publication number: 20160329440
    Abstract: A method for use in forming a photovoltaic device includes forming a doped semiconductor layer on a surface of a semiconductor substrate and forming a metal film on the doped semiconductor layer. A patterned etched resist is formed on the metal film and a dielectric layer is formed on the doped semiconductor layer and the etched resist. A laser having a wavelength absorbable by the patterned etch resist is applied through the dielectric layer to the patterned etch resist to remove the patterned etch resist.
    Type: Application
    Filed: May 8, 2015
    Publication date: November 10, 2016
    Inventors: Adrian Bruce TURNER, Bonneville Dudgeon EGGLESTON, Oliver SCHULTZ-WITTMANN, Douglas Edward CRAFTS