Patents by Inventor Douglas Grose

Douglas Grose has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20060188696
    Abstract: A composite member with a reinforced rampdown or taper has a composite noodle bonded to an end of a core to fill the taper.
    Type: Application
    Filed: February 24, 2005
    Publication date: August 24, 2006
    Inventors: Douglas Grose, Marc Piehl, Douglas Frisch, Joseph Sweetin, Gary Peffers
  • Publication number: 20060108058
    Abstract: Composite sections for aircraft fuselages and other structures, and methods and systems for manufacturing such sections, are disclosed herein. A method for manufacturing a shell structure in accordance with one embodiment of the invention includes applying composite material to an interior mold surface of a tool to form a skin extending 360 degrees around an axis. The method can further include positioning a plurality of stiffeners on an inner surface of the skin. After the stiffeners have been positioned, a vacuum bag can be installed over the stiffeners and evacuated to press the stiffeners and the skin outwardly against the interior mold surface of the tool. Next, the skin/stiffener combination can be cocured to bond the stiffeners to the skin and harden the shell structure.
    Type: Application
    Filed: November 24, 2004
    Publication date: May 25, 2006
    Inventors: Michael Chapman, Robert Watson, Donald Anderson, Marc Piehl, Joseph Sweetin, Douglas Grose
  • Patent number: 4752813
    Abstract: A Schottky barrier diode and ohmic contact metallurgy which is especially suited for shallow-junction bipolar semiconductor devices. The metallurgy comprises a thin layer of an at least 95 atomic % pure Schottky metal disposed in the contact openings on a shallow-junction semiconductor device to a thickness of less than 850 angstroms. An electrically conducting barrier layer is then disposed over the thin Schottky metal layer, with the barrier layer being of a material which does not react with either the Schottky metal or the semiconductor material in the contact openings to thereby prevent semiconductor material from diffusing past the barrier layer. An electrical contact layer is then deposited over the barrier layer. The doping of the semiconductor material in the individual contact openings determines whether an ohmic contact or a Schottky barrier diode is formed. The resulting ohmic contact metal and Schottky barrier metal do not penetrate through to the shallow junction of the semiconductor device.
    Type: Grant
    Filed: August 8, 1986
    Date of Patent: June 21, 1988
    Assignee: International Business Machines Corporation
    Inventors: Harasaran S. Bhatia, Satya P. Bhatia, Cyril P. de Vries, Douglas A. Grose